Thermophysical properties of SiC multilayer prepared by tape casting and pressureless sintering

Yang, Wenshu; Biamino, Sara; Padovano, Elisa; Pavese, Matteo; Marchisio, Silvia; D'Amico, Giuseppe; Mio, Simona Ceresa; Chen, X.; Fino, Paolo; Badini, Claudio Francesco

doi:10.1016/j.compstruct.2012.09.018

Cited by 11 publications

(5 citation statements)

References 41 publications

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“…This decreasing trend of thermal conductivity as a function of temperature is commonly found in typical ceramic insulators. This behavior is to be understood against the fact that in an ideal ceramic dielectric, heat is transferred by lattice vibrations (or thermal phonons) and the mean free path of the thermal phonons decrease at higher temperature due to the scattering of thermal phonons, thereby results in a decrease of thermal conductivity [20,21]. Most of the LTCC materials have thermal conductivity value within the range of 2-3 W/m K, which is obviously higher compared to that of commonly used printed circuit board [22].…”

Section: Resultsmentioning

confidence: 99%

Glass free, non-aqueous LTCC tapes of Bi4(SiO4)3 with high solid loading

Pullanchiyodan

Sebastian

Surendran

2015

Journal of the European Ceramic Society

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Section: Resultsmentioning

confidence: 99%

Glass free, non-aqueous LTCC tapes of Bi4(SiO4)3 with high solid loading

Pullanchiyodan

Sebastian

Surendran

2015

Journal of the European Ceramic Society

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“…Lastly, two broad peaks at ~47° and 55° were assigned as unidentified. While some studies have attributed these peaks to the SiC polymorph phase [46,47], others often define them as being C or Si phases [48,49,50]. When comparing the results from the GIXRD with an incidence angle of 2° (Figure 4) with the smaller angle results, the variation of the crystalline phases with the depth of the film was clearly noted.…”

Section: Resultsmentioning

confidence: 99%

The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering

et al. 2019

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Many strategies have been developed for the synthesis of silicon carbide (SiC) thin films on silicon (Si) substrates by plasma-based deposition techniques, especially plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering, due to the importance of these materials for microelectronics and related fields. A drawback is the large lattice mismatch between SiC and Si. The insertion of an aluminum nitride (AlN) intermediate layer between them has been shown useful to overcome this problem. Herein, the high-power impulse magnetron sputtering (HiPIMS) technique was used to grow SiC thin films on AlN/Si substrates. Furthermore, SiC films were also grown on Si substrates. A comparison of the structural and chemical properties of SiC thin films grown on the two types of substrate allowed us to evaluate the influence of the AlN layer on such properties. The chemical composition and stoichiometry of the samples were investigated by Rutherford backscattering spectrometry (RBS) and Raman spectroscopy, while the crystallinity was characterized by grazing incidence X-ray diffraction (GIXRD). Our set of results evidenced the versatility of the HiPIMS technique to produce polycrystalline SiC thin films at near-room temperature by only varying the discharge power. In addition, this study opens up a feasible route for the deposition of crystalline SiC films with good structural quality using an AlN intermediate layer.

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“…Lastly, two broad peaks at ~47° and 55° were assigned with as unidentified. While some studies have attributed these peaks to the SiC polymorph phase [42,43], others often relate them as being C or Si phase [44][45][46]. Observing the results of GIXRD with an incidence angle of 2° (Fig.…”

Section: Chemical Composition and Stoichiometrymentioning

confidence: 99%

The Influence of AlN Buffer Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering

Galvão¹,

Guerino²,

Campos³

et al. 2019

Preprint

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Many strategies have been developed for the synthesis of silicon carbide (SiC) thin films on silicon (Si) substrates by plasma-based deposition techniques, especially plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering, due to importance of these materials for microelectronics and related fields. A drawback is the large lattice mismatch between SiC and Si. The insertion of a thin aluminum nitride (AlN) buffer layer between them has been shown useful to overcome this problem. Herein, the high-power impulse magnetron sputtering (HiPIMS) technique was used to grow SiC thin films on AlN/Si substrates. Furthermore, the SiC films were also grown on Si substrates. Comparisons of the structural and chemical properties of SiC thin films grown on the two types of substrates allowed us to evaluate the influence of AlN buffer layer on such properties. The chemical composition and stoichiometry of the samples were investigated by Rutherford backscattering spectrometry (RBS) and Raman spectroscopy, while the crystallinity was characterized by grazing incidence X-ray diffraction (GIXRD). Our set of results evidenced the versatility of HiPIMS technique to produce polycrystalline SiC thin films at near room temperature only varying the discharge power. In addition, this study opens up a feasible route for the deposition of crystalline SiC films with a good structural quality using AlN buffer layer.

show abstract

Thermophysical properties of SiC multilayer prepared by tape casting and pressureless sintering

Cited by 11 publications

References 41 publications

Glass free, non-aqueous LTCC tapes of Bi4(SiO4)3 with high solid loading

Glass free, non-aqueous LTCC tapes of Bi4(SiO4)3 with high solid loading

The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering

The Influence of AlN Buffer Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering

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