Thermoreflectance-Based Measurement of Facet Optical Absorption in High Power Diode Lasers

Jha, Aman Kumar; Leisher, Paul O.; Li, Chen; Pipe, Kevin P.; Crowley, M. T.; Fullager, Daniel B.; Helmrich, Jason D.; Thiagarajan, P.; Deri, Robert J.; Swertfeger, Rebecca B.

doi:10.1109/lpt.2019.2949281

Cited by 8 publications

(5 citation statements)

References 15 publications

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“…during aging tests) can be used to distinguish between degradation induced near the facet and changes in the cavity interior. Surface recombination velocity at the facet is related to the presence of defects [25,26], so the ability to quantify how these recombination parameters evolve over device lifetime will be useful in determining the spatial origins of device degradation and its connection to other measures of facet aging [27]. Finally, this approach could be used to distinguish contributions of various portions of the laser diode structure provided devices can be fabricated with control over a relevant geometric parameter.…”

mentioning

confidence: 99%

Facet effects on generation-recombination currents in semiconductor laser diodes

Fenwick¹,

Deri²,

Baxamusa³

et al. 2022

Semicond. Sci. Technol.

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The contribution of facet defect currents to the overall generation-recombination current of laser diodes operating near 800 nm is quantified experimentally, using the dependence of current on cavity length to isolate facet effects. The results show that facet currents exhibit an ideality factor much greater than 2, while currents associated with the interior of the laser diode stripes exhibit an ideality factor of 2. These differences in behavior provide an approach to infer additional details of defect evolution in aging studies of semiconductor laser diodes.

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mentioning

confidence: 99%

Facet effects on generation-recombination currents in semiconductor laser diodes

Fenwick¹,

Deri²,

Baxamusa³

et al. 2022

Semicond. Sci. Technol.

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“…al. [41]. All external surfaces are considered adiabatic boundaries except for the convective boundary condition at the TEC surface.…”

Section: Measurement and Simulation Methodsmentioning

confidence: 99%

“…Several approaches have been proposed to mitigate COD, such as current blocking [9,10], surface passivation [11][12][13], non-absorbing mirrors [14,15], quantum well intermixing [16][17][18][19], and multi-section waveguide design [20][21][22][23]. To study the thermal behavior and heating mechanisms of LDs, various experimental and computational methods have been employed, such as micro photoluminescence [24], Raman spectroscopy [25], infrared scanning near-field optical microscopy [26,27], thermoreflectance spectroscopy [28][29][30][31][32], analytical models [35][36][37][38][39], and numerical simulations [40][41][42][43]. In this paper, we present a combined experimental and numerical investigation of the effect of waveguide width on the temperature and reliability of LDs.…”

Section: Introductionmentioning

confidence: 99%

Narrow versus broad waveguide laser diodes: a comparative analysis of self-heating and reliability

Demir,

Sünnetçioglu,

Ebadi

et al. 2024

High-Power Diode Laser Technology XXII

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Semiconductor laser diodes (LDs) generate high output powers with high power conversion efficiencies. While broad-area LDs are favored for high-power applications, narrow-waveguide LDs are in demand for their single-mode characteristics. However, LDs suffer from device failures caused by catastrophic optical damage (COD) due to elevated self-heating at high operating currents. It is critical to understand the COD mechanism in these devices to enhance their reliability and operating output power. In this study, we investigated the self-heating and temperature characteristics of LDs with varying waveguide widths to uncover the cause of their failure mechanism. We assessed the performance, junction, and facet temperatures of the narrow (W=7 µm) and broad waveguide (W=100 µm) LDs. The narrower waveguide LDs achieved and operated at higher output power densities but, surprisingly, maintained lower junction and facet temperatures. Additionally, we employed a thermal simulation model to analyze heat transport characteristics versus LD waveguide widths. The simulation results showed that narrower waveguide LDs exhibit improved three-dimensional heat dissipation, resulting in reduced junction and facet temperatures and, thus, enhanced reliability. Our simulations align well with the experimental data. The findings demonstrate a transition in heat dissipation characteristics from broad to narrow waveguide behavior at approximately 50 µm width. These results clarify the fundamental reasons behind the superior reliability of narrower waveguide LDs and provide valuable guidance for LD thermal management.

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“…where ∆R/R is a relative change in reflectivity, ∆T is a temperature change, R is the reflection coefficient, and κ is the TR coefficient, which depends on the material properties and optical parameters of the TR setup, such as illumination wavelength and NA of the objective [29]. An LED at λ= 470 nm is used as the probe signal focused on the laser facet through an objective after passing through a condenser lens, beam splitter (BS), and a dichroic mirror (DM) transmitting LED light while reflecting 99% of the laser beam.…”

Section: Design and Measurement Methodsmentioning

confidence: 99%

COMD-free continuous-wave high-power laser diodes by using a multi-section waveguide method

Demir,

Ebadi,

Liu

et al. 2023

High-Power Diode Laser Technology XXI

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Thermoreflectance-Based Measurement of Facet Optical Absorption in High Power Diode Lasers

Cited by 8 publications

References 15 publications

Facet effects on generation-recombination currents in semiconductor laser diodes

Facet effects on generation-recombination currents in semiconductor laser diodes

Narrow versus broad waveguide laser diodes: a comparative analysis of self-heating and reliability

COMD-free continuous-wave high-power laser diodes by using a multi-section waveguide method

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