Thermoreflectance based thermal microscope

Christofferson, James; Shakouri, Ali

doi:10.1063/1.1850632

Cited by 112 publications

(67 citation statements)

References 13 publications

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“…This additional photo-induced current can cause a significant additional device heating, which often dominates even the direct laser heating induced temperature rise [22]. Reflectivity changes can also be used to optically probe the device temperature, either considering only the change in reflectivity [23,24], or additionally by measuring the phase shift of the reflected light [25,26]. Calibration of the thermoreflectance coefficient can be challenging as the change in reflectivity with temperature is often small, however it is possible by performing careful measurements of specially prepared samples [27].…”

Section: Techniquesmentioning

confidence: 99%

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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This is the author accepted manuscript (AAM). The final published version (version of record) is available online via IEEE at http://ieeexplore.ieee.org/document/7590091. Please refer to any applicable terms of use of the publisher. University of Bristol -Explore Bristol Research General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: http://www.bristol.ac.uk/pure/about/ebr-termsAbstract-We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. This is critical for the qualification of device technology, including for accelerated lifetime reliability testing and device design optimization. Its practical use is illustrated for GaN and GaAs based high electron mobility transistors, and opto-electronic devices. We also discuss how Raman thermography is used to validate device thermal models, as well as determining the thermal conductivity of materials relevant for electronic and opto-electronic devices.

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Section: Techniquesmentioning

confidence: 99%

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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“…However, the thermometer sensitivity is not reported and no data are published to estimate it. These NPs are one of the few examples reported so far of cellular thermometers based on Ln , Ln ¼ Er, Tm) were also used for high-contrast intracellular fluorescence images of HeLa cells 64,68,124 and in vivo whole body nude mouse.…”

mentioning

confidence: 99%

Thermometry at the nanoscale

et al. 2012

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Non-invasive precise thermometers working at the nanoscale with high spatial resolution, where the conventional methods are ineffective, have emerged over the last couple of years as a very active field of research. This has been strongly stimulated by the numerous challenging requests arising from nanotechnology and biomedicine. This critical review offers a general overview of recent examples of luminescent and non-luminescent thermometers working at nanometric scale. Luminescent thermometers encompass organic dyes, QDs and Ln 3+ ions as thermal probes, as well as more complex thermometric systems formed by polymer and organic-inorganic hybrid matrices encapsulating these emitting centres. Non-luminescent thermometers comprise of scanning thermal microscopy, nanolithography thermometry, carbon nanotube thermometry and biomaterials thermometry. Emphasis has been put on ratiometric examples reporting spatial resolution lower than 1 micron, as, for instance, intracellular thermometers based on organic dyes, thermoresponsive polymers, mesoporous silica NPs, QDs, and Ln 3+ -based up-converting NPs and b-diketonate complexes. Finally, we discuss the challenges and opportunities in the development for highly sensitive ratiometric thermometers operating at the physiological temperature range with submicron spatial resolution.

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“…5 Based on this dependence, the distribution of the temperature change on a material surface can be quantitatively described as:…”

Section: Thermoreflectance Imaging Methodsmentioning

confidence: 99%

Characterization of Single Barrier Microrefrigerators at Cryogenic Temperatures

Wang

Ezzahri

Bian

et al. 2009

Journal of Elec Materi

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The experimental characterization of single barrier heterostructure thermionic cooling devices at cryogenic temperatures is reported. The device studied was a cylindrical InGaAs microrefrigerator, in which the active layer was a 1 lm thick In 0.527 Al 0.218 Ga 0.255 As heterostructure barrier with n-type doping concentration of 6.68 9 10 16 cm À3 and an In 0.53 Ga 0.47 As emitter/collector of 5 9 10 18 cm À3 n-doping. A full field thermoreflectance imaging technique was used to measure the distribution of temperature change on the deviceÕs top surface when different current excitation values were applied. By reversing the current direction, we studied the deviceÕs behavior in both cooling and heating regimes. At an ambient temperature of 100 K, a maximum cooling of 0.6 K was measured. This value was approximately one-third of the measured maximum cooling value at room temperature (1.8 K). The paper describes the deviceÕs structure and the first reported thermal imaging at cryogenic temperatures using the thermoreflectance technique.

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Thermoreflectance based thermal microscope

Cited by 112 publications

References 13 publications

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Thermometry at the nanoscale

Characterization of Single Barrier Microrefrigerators at Cryogenic Temperatures

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