2017
DOI: 10.1109/jmems.2017.2710354
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Thermoresistive Effect for Advanced Thermal Sensors: Fundamentals, Design Considerations, and Applications

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Cited by 128 publications
(93 citation statements)
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“…For example, their temperature coefficient of Applied Physics Reviews REVIEW scitation.org/journal/are resistance values typically is lower than 1250 ppm/K compared to several thousands to several tens of thousands of ppm/K for metals or bulk semiconductors. 174 To improve the thermosensitivity of these materials, they have been mixed with other materials to form a hybrid sensitive material. A soft temperature sensitive nanocomposite was fabricated by doping mechanically adaptable polymers based on hydrogen bonds with SWNTs [ Fig.…”
Section: B Temperature Sensorsmentioning
confidence: 99%
“…For example, their temperature coefficient of Applied Physics Reviews REVIEW scitation.org/journal/are resistance values typically is lower than 1250 ppm/K compared to several thousands to several tens of thousands of ppm/K for metals or bulk semiconductors. 174 To improve the thermosensitivity of these materials, they have been mixed with other materials to form a hybrid sensitive material. A soft temperature sensitive nanocomposite was fabricated by doping mechanically adaptable polymers based on hydrogen bonds with SWNTs [ Fig.…”
Section: B Temperature Sensorsmentioning
confidence: 99%
“…Micro electromechanical system (MEMS) gyroscope has the advantages of small size, light weight, and low cost [1,2,3,4], which is widely used in various fields of modern navigation. However, the accuracy of MEMS gyroscopes is low.…”
Section: Introductionmentioning
confidence: 99%
“…The demand for electronics and sensors which can operate in extreme conditions has propelled the research into wide band gap materials such as III‐nitride (e.g., GaN, AlN), silicon carbide (SiC) and diamond‐like carbon (DLC) . Among these materials, SiC has emerged as an excellent semiconductor for Micro Electro Mechanical Systems (MEMS) applications owing to its large energy gap, varying from 2.3 to 3.4 eV, excellent chemical inertness, superior mechanical properties, and outstanding radiation tolerance . Numerous SiC technologies have been transitioned into commercial products, including bipolar transistors, Schottky diodes, field effect transistors, ultraviolet photodetectors, and gas sensors …”
Section: Introductionmentioning
confidence: 99%