Thick AlN layers grown by HVPE

Kovalenkov, O. V.; Soukhoveev, V.; Ivantsov, V.; Usikov, A.; Dmitriev, V.

doi:10.1016/j.jcrysgro.2005.03.054

Cited by 67 publications

(54 citation statements)

References 19 publications

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“…However, the present authors recently reported that HVPE of AlN using AlCl 3 , which does not react with quartz, is possible by preferential generation of AlCl 3 at the source zone [7,8]. Exploiting this fact, other research groups have also investigated HVPE of AlN [9,10]. However, little has been revealed about the effects of growth conditions on AlN growth.…”

Section: Introductionmentioning

confidence: 86%

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Kumagai¹,

Takemoto²,

Kikuchi³

et al. 2006

Physica Status Solidi (b)

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A thermodynamic analysis on hydride vapor phase epitaxy (HVPE) of AlN using AlCl 3 and NH 3 was performed. Regardless of the carrier gas used, partial pressures of Al-containing gaseous species [AlCl 3 , AlCl 2 , AlCl and (AlCl 3 ) 2 ] in equilibrium with AlN are significantly low in the temperature range of 500 -1500 °C when the input V/III ratio is above 1. This means that the driving force for AlN growth (∆P Al ) becomes almost equal to the input partial pressure of AlCl 3 , which is quite different from HVPE of GaN. The good agreement between the calculated and experimental growth rates shows that HVPE of AlN is thermodynamically controlled.

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Section: Introductionmentioning

confidence: 86%

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Kumagai¹,

Takemoto²,

Kikuchi³

et al. 2006

Physica Status Solidi (b)

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“…Various groups have reported AlN growth by bulk and seeded methods [1,2], but large-area AlN substrates are not available yet. HVPE appears to be an attractive technique to fabricate AlN substrates as reported by a few groups [3,4,5]. HVPE is being successfully utilized to grow free-standing GaN substrates with growth rates as high as 200 µm/h [6].…”

Section: Introductionmentioning

confidence: 99%

Growth of AlN films and their characterization

Jain¹,

Gao²,

Zhang³

et al. 2006

Phys. Status Solidi (c)

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Single crystal AlN layers have been produced by migration enhanced metal organic chemical vapor deposition (MEMOCVD), hydride vapor phase epitaxy (HVPE) and their combination. The growth was carried out on 2" basal plane sapphire substrates. In MEMOCVD, the duration and waveforms of precursors were varied to achieve better surface mobility and thus better atomic incorporation. It resulted in superior layer quality templates with the narrowest (002) X-ray rocking curve full width half maximum (FWHM). Such high quality AlN templates were used as seeds for subsequent HVPE growth. Thick films with thickness ranging from 1-25 µm have been grown by HVPE with growth rates as high as 200 µm/min, highest ever reported. Films grown by the two methods have been extensively characterized by Nomarski microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), high-resolution Xray diffractometry (HRXRD), and photoluminescence (PL).

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“…It was also demonstrated that HVPE technology is able to deposit thick AlN epitaxial layers on 2-inch sapphire and conductive silicon carbide (SiC) substrates. [1]. The AlN/SiC templates were used as semi-insulating template substrates for GaN-based HEMT structures growth and devices fabrication [2].…”

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confidence: 99%

Large area GaN and AlN template substrates fabricated by HVPE

Soukhoveev

Volkova

Ivantsov

et al. 2009

Phys. Status Solidi (c)

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Hydride vapour phase epitaxy (HVPE) is known as fast deposition method to produce both free‐standing GaN substrate materials and thick low‐defect GaN on 2‐inch sapphire and AlN layers on 2‐inch sapphire and conductive silicon carbide (SiC) substrates. These substrate materials of 2‐inch size are available as commercial product. In this paper, we extend the HVPE abilities to new fields including up to 23 μm thick crack‐free AlN layers growth on 3‐inch and 100‐mm SiC substrates (AlN/SiC template substrates) and up to 125 μm thick GaN layers grown on 3‐inch sapphire (GaN/sapphire template substrates). For 21‐23 μm thick AlN layers grown on 100‐mm SiC substrates, the X‐ray rocking curve FWHM was ranged from 200 to 300 arc sec and from 600 to 800 arc sec for the (00.2) and the (10.2) AlN reflections, respectively. For 115‐125 μm thick GaN layers, the X‐ray FWHM values were 120‐150 arcsec and 200‐230arc sec for the (00.2) and the (10.2) GaN reflections, respectively, that corresponds screw dislocation density of (3‐5)×107 cm–2 evaluated based on XRD data. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Thick AlN layers grown by HVPE

Cited by 67 publications

References 19 publications

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Growth of AlN films and their characterization

Large area GaN and AlN template substrates fabricated by HVPE

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Thick AlN layers grown by HVPE

Cited by 67 publications

References 19 publications

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3

Growth of AlN films and their characterization

Large area GaN and AlN template substrates fabricated by HVPE

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Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃