Thick films for high-temperature piezoelectric applications - a future reference

S, Sruthi; Sahoo, Manoranjan; Dutta, Soma

doi:10.1007/s10832-023-00331-z

J Electroceram

2023

DOI: 10.1007/s10832-023-00331-z

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Thick films for high-temperature piezoelectric applications - a future reference

Sruthi S,

Manoranjan Sahoo,

Soma Dutta

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2024

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Cited by 3 publications

References 104 publications

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Interface structures of Al0.85Sc0.15N-on-Si thin films grown by reactive magnetron sputtering upon post-growth cyclic rapid thermal annealing

Huang,

Yong,

Lin

et al. 2024

Journal of Applied Physics

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Al0.85Sc0.15N thin films, about 920 nm thick, have been deposited on the Si (001) substrate by reactive magnetron sputtering at 600 °C. X-ray diffraction and pole-figure measurements revealed [0002]-oriented texture structures of the nitride films without any phase separations before and after cyclic annealing at 600–900 °C for up to 48 min. Cross-sectional studies by transmission electron microscopy and energy dispersive x-ray analysis revealed an intermediate Al0.85Sc0.15N layer of ∼24.6 nm thick with smaller grains and tilted [0002]-orientations compared to its overlayer, i.e., a nucleation layer (NL), on the Si substrate. After annealing, apparent morphological changes have been observed at the near-interface regions, including the NL, the NL/Si interface, and the Si substrate, rather than in the Al0.85Sc0.15N overlay. Undesired oxygen has been observed in the nitride film and its composition increased during post-growth thermal annealing without forming oxides. These observations shed new light on crystal growth and post-growth thermal annealing of AlScN toward their high-performance piezoelectric applications.

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Interface structures of Al0.85Sc0.15N-on-Si thin films grown by reactive magnetron sputtering upon post-growth cyclic rapid thermal annealing

Huang,

Yong,

Lin

et al. 2024

Journal of Applied Physics

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Grain-wise piezoelectric response of polycrystalline aluminum nitride thin films: an empirical investigation using piezo force microscopy

Sharma,

Kamparath,

Pal

et al. 2024

J. Phys. D: Appl. Phys.

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Local mapping of piezoelectric response across grains with different crystal-planes is essential to enhance the level of understanding about piezoelectric behaviour of wurtzite hexagonal (WH) AlN thin films. For this, polycrystalline WH-AlN thin films were deposited by pulsed-DC magnetron sputtering using a mixture of argon (Ar) and nitrogen (N2) with varying N2-content as 5%, 10% and 20% in the form of AlN/Ti/Si(100) heterostructure. Piezo force microscopy (PFM) was used to establish a correlation between piezo-response (PR) phase contrast, polarity and crystal-planes constituting the film surface. A phenomenological model is also presented to correlate the distribution of interface sheet charges with polar (0002), semi-polar (10 1) and non-polar (10 0)-planes present on the film surface. This interdependence eventually controls the phase between piezoelectric oscillations and modulation voltage which is ultimately translated into a grain-wise contrast obtained on PR-phase image.

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Low-Temperature Fabrication of Millimeter-Scale MEMS-Based Piezoelectric Ultrasonic Energy Harvesters for Medical Implants

Tian,

Iordanidis,

Stemme

et al. 2024

J. Microelectromech. Syst.

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Thick films for high-temperature piezoelectric applications - a future reference

Cited by 3 publications

References 104 publications

Interface structures of Al0.85Sc0.15N-on-Si thin films grown by reactive magnetron sputtering upon post-growth cyclic rapid thermal annealing

Interface structures of Al0.85Sc0.15N-on-Si thin films grown by reactive magnetron sputtering upon post-growth cyclic rapid thermal annealing

Grain-wise piezoelectric response of polycrystalline aluminum nitride thin films: an empirical investigation using piezo force microscopy

Low-Temperature Fabrication of Millimeter-Scale MEMS-Based Piezoelectric Ultrasonic Energy Harvesters for Medical Implants

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