Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition

Leone, Stefano; Pedersen, Henrik; Henry, Anne; Kordina, Olof; Janzén, Erik

doi:10.1016/j.jcrysgro.2009.10.011

Cited by 42 publications

(71 citation statements)

References 35 publications

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“…The effect of the temperature, the C/Si, and Cl/Si ratios rendered similar results described elsewhere and are not described here. 16 Unfortunately, no kinetic calculation could be preformed with the available software.…”

Section: Resultsmentioning

confidence: 99%

“…The experiments using the concentrated chlorinated chemistry also exhibit the same typical trends already observed for the chloridebased CVD on different off-angles. [14][15][16] The goal of this paper is to develop a concentrated chloride-based CVD process on different off-axis substrates, but also to achieve a high growth rate while keeping a good morphology and thickness uniformity of the epitaxial layers.…”

Section: Discussionmentioning

confidence: 99%

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Optimization of a Concentrated Chloride-Based CVD Process for 4H–SiC Epilayers

Henry¹,

Andersson²,

Kordina³

et al. 2010

J. Electrochem. Soc.

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Concentrated homoepitaxial growths of 4H-SiC was performed using a chloride-based chemical vapor deposition ͑CVD͒ process on different off-angle substrates ͑on-axis, 4 and 8°off-axis toward the ͓1120͔ direction͒. A suitable combination of gas flow and process pressure is needed to produce the gas speed that yields an optimum cracking of the precursors and a uniform gas distribution for deposition over large areas. The use of low pressure and the addition of chlorinated precursors bring the added benefit of achieving higher growth rates. A systematic study of the gas speed's effect on the growth rate, uniformity, and morphology on the 4H-SiC epitaxial layers was performed. Growth rates in excess of 50 m/h were achieved on 50 mm diameter wafers with excellent thickness uniformity ͑below 2% /mean without rotation of the substrate͒ and smooth morphology using only 1/10 of the typical gas carrier flow and process pressure demonstrating the feasibility of a concentrated chloride-based CVD process for 4H-SiC. Thermodynamic calculations showed that the improved thickness uniformity could be due to a more uniform gas phase composition of the silicon intermediates. The concentration of the SiCl 2 intermediate increases by a factor of 8 at a reduced carrier flow, while all the other hydrogenated silicon intermediates decrease.

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Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Optimization of a Concentrated Chloride-Based CVD Process for 4H–SiC Epilayers

Henry¹,

Andersson²,

Kordina³

et al. 2010

J. Electrochem. Soc.

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“…Homoepitaxy of 4H-SiC with good morphology is attained on 0.3°off-axis ( 000 1) and 0.79°off-axis (0001) with a growth rate of about 5 μm/h at 1600°C. The use of Cl-based chemistry is also effective for 4H-SiC homoepitaxy on nearly on-axis (0001) substrates, and homoepitaxy at high growth rates over 100 μm/h was realized [214,215]. However, the surface morphology and reproducibility are still challenges in 4H-SiC epitaxy on nearly on-axis {0001}.…”

Section: Homoepitaxy On Nearly On-axis Growthmentioning

confidence: 99%

Bulk and epitaxial growth of silicon carbide

Kimoto

2016

Progress in Crystal Growth and Characterization of Materials

143

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“…Temperatures in excess of 1600 1C are usually preferred to reduce the formation of 3C-SiC inclusions in between the 4H-SiC islands growing on the step-free surface. Even lower C/Si ratios (0.3-0.6) and very high Cl/Si ratios (up to 30) are the key parameters to get homoepitaxial growth [5], unless a silicon-rich surface pre-treatment is included in the process [6] making the polytype control easier.…”

Section: Substrate Off-anglementioning

confidence: 99%