Thick hydride vapor phase epitaxial growth of ZnSe on GaAs (1 0 0) vicinal and orientation patterned substrates

Thick Hydride Vapor Phase Heteroepitaxy: A Novel Approach to Growth of Nonlinear Optical Materials

“…As for the case of ZnSe/GaAs, the critical thickness must be significantly larger due to the much smaller lattice mismatch of only +0.238% (see Table 2). However, as it was already discussed, in spite of the sharp ZnSe/GaAs interface stacking faults in the ZnSe layer along {111} that originate still from the GaAs substrates [96] (Figure 30) were observed (in opposite to the case of GaP/GaAs) near the interface well below the predicted in [97] critical thickness of about 41 nm, suggesting that their formation is, namely, the mechanism of strain release in the ZnSe/GaAs case. Obviously, during a faster (HVPE) growth in both cases the strain built in result of the lattice mismatch can be released in different ways, which could postpone for a later stage of growth the formation of MDs, or even entirely to replace it.…”

“…Competing growth rates on different planes of the growing crystal are partly responsible for one Figure 30. High-resolution TEM image of the ZnSe/GaAs interface (reproduced from [96] with some modifications with the permission of J. Cryst. Growth).…”

“…(a) SEM cross sectional image of heteroepitaxial grown ZnSe/GaAs; (b) SEM top surface image of heteroepitaxial grown ZnSe/GaAs[96]; (reproduced from[96] with the permission of J. Cryst. Growth).…”

“…(a) SEM cross sectional image of heteroepitaxial grown ZnSe/GaAs; (b) SEM top surface image of heteroepitaxial grown ZnSe/GaAs[96]; (reproduced from[96] with the permission of J. Cryst. Growth).For an easy comparison the nextFigure 29shows cross sectional(Figure 29a) and top surface (Figure 29b) SEM images of the homoepitaxially grown ZnSe on plain ZnSe.…”

“…Cross-section image of one of as-cleaved OP-ZnSe structure grown on OP-GaAs template showing domain propagation up to the surface (reproduced from[96] with some modifications with the permission of J. Cryst. Growth).…”