Thick low-loss orientation-patterned gallium arsenide (OP-GaAs) samples for mid-infrared laser sources

Faye, D.; Lallier, Éric; Grisard, Arnaud; Gérard, Bruno; Kieleck, Christelle; Hirth, A.

doi:10.1117/12.737110

Cited by 6 publications

(7 citation statements)

References 11 publications

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“…We used an OP-GaAs crystal grown by Hydride Vapour Phase Epitaxy (HVPE) [29,30], the method of choice for achieving fast growth rates with excellent selectivity so as to produce thick OP-GaAs structures for QPM frequency conversions. The epitaxial growth on orientationpatterned semiconductor crystals requires templates with modulated crystalline orientation, which constitute the seeds for the epitaxial regrowth.…”

Section: The Orientation-patterned Gaas Samplementioning

confidence: 99%

Nonlinear diffraction in orientation-patterned semiconductors

Karpinski¹,

Chen²,

Shvedov³

et al. 2015

Opt. Express

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This work represents experimental demonstration of nonlinear diffraction in an orientation-patterned semiconducting material. By employing a new transverse geometry of interaction, three types of second-order nonlinear diffraction have been identified according to different configurations of quasi-phase matching conditions. Specifically, nonlinear Čerenkov diffraction is defined by the longitudinal quasi-phase matching condition, nonlinear Raman-Nath diffraction satisfies only the transverse quasi-phase matching condition, and nonlinear Bragg diffraction fulfils the full vectorial quasi-phase matching conditions. The study extends the concept of transverse nonlinear parametric interaction toward infrared frequency conversion in semiconductors. It also offers an effective nondestructive method to visualise and diagnose variations of second-order nonlinear coefficients inside semiconductors.

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Section: The Orientation-patterned Gaas Samplementioning

confidence: 99%

Nonlinear diffraction in orientation-patterned semiconductors

Karpinski¹,

Chen²,

Shvedov³

et al. 2015

Opt. Express

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“…However, improvement in growing techniques of quasi-phase-matched (QPM) orientation-patterned GaAs (OP-GaAs) crystals permitted efficient demonstration of second-harmonic generation [6], difference frequency generation and optical parametric oscillation [7][8][9]. OP-GaAs fabrication process utilizes a dedicated pressure oven adapted to accept 2 inches wafers [1,9]. Gratings in 2 inches-wafers are fabricated by standard photolithography and subsequent dry etching [1,9].…”

Section: Introductionmentioning

confidence: 99%

“…OP-GaAs fabrication process utilizes a dedicated pressure oven adapted to accept 2 inches wafers [1,9]. Gratings in 2 inches-wafers are fabricated by standard photolithography and subsequent dry etching [1,9]. Then, a near-equilibrium technique, the atmospheric-pressure hydride vapor-phase epitaxy (HVPE), allows depositing additional material onto the pre-orientated substrates with perfect conservation of initial template crystallographic inversion with growth rates up to 30 µm/h.…”

Section: Introductionmentioning

confidence: 99%

OP-GaAs OPO pumped by 2μm Q-switched lasers: Tm;Ho:silica fiber laser and Ho:YAG laser

Kieleck

Hildenbrand

Eichhorn

et al. 2010

Technologies for Optical Countermeasures VII

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Improvement in hybrid vapour phase epitaxy growing techniques of quasi-phase-matched orientation-patterned GaAs (OP-GaAs) allows larger sample thickness and permits efficient operation as a mid-infrared optical parametric oscillator at Watt-level average output powers [1-3]. Especially its low absorption loss (∼ 0.01 cm -1 ), its laser damage threshold comparable to ZGP (∼ 2 J/cm 2 ) combined with a large nonlinear coefficient, a good thermal conductivity, excellent mechanical properties, and a wide transparency range (0.9-17 µm) are suitable properties for efficient non-critical phase matched OPOs. As there is no natural birefringence in GaAs, phase matching is independent of polarization and propagation direction, offering the ability to pump OP-GaAs with a variety of polarization states. Thus, even unpolarized or poorly polarized sources like simple fiber lasers have been efficiently used as pump sources [4][5].The paper discuss the best OP-GaAs OPO results achieved, to our knowledge, using a Q-switched 2.09 μm Ho:YAG laser as pump source as well as results obtained with an OP-GaAs OPO directly pumped by a 2.09 μm Q-switched Tm,Ho:silica fiber laser. With a 2.09 μm Q-switched Ho:YAG fiber laser pump source up to 2.9 W of average output power was achieved at 20 kHz repetition rate, 3.9 W at 40 kHz and 4.9 W at 50 kHz. With a 2.09 μm Q-switched Tm 3+ ,Ho 3+ :silica fiber laser pump source, up to 2.2 W of average output power was achieved at 40 kHz repetition rate, 1.9 W at 60 kHz and 1.3 W at 75 kHz in the mid-infrared range

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“…For example, Schlossberg et al placed a series of GaAs plates at Brewster's angle [6] and Gordon et al manually polished, sliced and stacked GaAs pieces [7] but those processes resulted in too much loss to be useful in an OPO. About 10 years ago, a challenging multistep all-epitaxial process for fabrication of useful orientation-patterned GaAs has been developed for quasi-phasematched nonlinear optics [8][9][10][11][12]. First, it requires templates whose surface contains a modulation in crystalline orientation.…”

Section: Introductionmentioning

confidence: 99%

Polarization effects and fiber-laser-pumping of a 2-Âµm-pumped OP-GaAs OPO

Kieleck

Eichhorn

Faye

et al. 2010

Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications IX

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Gallium arsenide combines a large nonlinear coefficient, a good thermal conductivity, excellent mechanical properties, and a wide transparency range (0.9-17 µm). Improvement in hybrid vapour phase epitaxy growing techniques of quasiphase-matched orientation-patterned GaAs (OP-GaAs) allows larger sample thickness and permits efficient operation as a mid-infrared optical parametric oscillator at Watt-level average output powers. Especially its low absorption loss (∼ 0.01 cm -1 ), its laser damage threshold comparable to ZGP (∼ 2 J/cm 2 ) are suitable properties for efficient non-critical phase matched OPOs. As there is no natural birefringence in GaAs, phase matching is independent of polarization and propagation direction, offering the ability to pump OP-GaAs with a variety of polarization states. Thus, even unpolarized or poorly polarized sources like simple fiber lasers have been efficiently used as pump sources. The paper will discuss recent results obtained with an OP-GaAs OPO directly pumped by a 2.09 μm Q-switched Tm,Ho:silica fiber laser and a study on polarization effects using a Q-switched 2.09 μm Ho:YAG laser as the pump. With a 2.09 μm Q-switched Tm,Ho:silica fiber laser pump source, up to 2.2 W of average output power was achieved at 40 kHz repetition rate, 1.9 W at 60 kHz and 1.3 W at 75 kHz in the mid-infrared range.

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Thick low-loss orientation-patterned gallium arsenide (OP-GaAs) samples for mid-infrared laser sources

Cited by 6 publications

References 11 publications

Nonlinear diffraction in orientation-patterned semiconductors

Nonlinear diffraction in orientation-patterned semiconductors

OP-GaAs OPO pumped by 2μm Q-switched lasers: Tm;Ho:silica fiber laser and Ho:YAG laser

Polarization effects and fiber-laser-pumping of a 2-Âµm-pumped OP-GaAs OPO

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