Thick monocrystalline silicon on oxidized silicon wafers produced by a zone melting process using a scanning halogen lamp

Abstract

Unseeded and seeded crystallization of thick polycrystalline silicon (up to 10 μm) on SiO2 is carried out in a zone melting process using irradiation with a halogen lamp working in the scanning mode. Recrystallization without crystallization seed results in large monocrystalline areas (up to several millimeters wide and about 10 mm long). The seeded solidification produces monocrystalline silicon (100) oriented. The results indicate as well the influence of thermal conditions and impurity distribution as the interface kinetics on the feature and crystalline quality of the recrystallized film.

EBIC investigations of thick SOI layers

“…One has to keep in mind, however, that 4devices are sensitive also to local microscopic inhomogeneities, so that a parameter averaged over a given area is not a sufficient characteristic of the material perfection. 4. Discussion.…”

“…The SOI layers were obtained by zone-melting recrystallization of polycrystalline silicon using a l halogen-lamp strip heater [4][5][6]. The samples to be r recrystallized were prepared in the following way : t (100) silicon was thermally oxidized up to a thickness .…”

The advancement of silicon-on-insulator (SOI) devices and their basic properties

“…Various energy sources are used to create the molten zone, namely: strip graphite heaters [74], powerful halogen lamps [75,76], laser and electron beams [71][72][77][78][79]. The best results have been obtained using the continuous lasers, in particular, the powerful neodymium laser YAG Nd with the wavelength of 1.06 μm.…”