Thickness and angular dependent ferromagnetic resonance of ultra-low damping Co25Fe75 epitaxial films

Cheng, Yang; Lee, Jun Hui; Brangham, Jack; White, Shane P.; Ruane, William; Hammel, P. C.; Yang, Fengyuan

doi:10.1063/1.5055872

Cited by 17 publications

(27 citation statements)

References 29 publications

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“…The angular dependence of FMR linewidth for multilayer films can be presented in the following formula, [ 28,45–48 ]

\begin{matrix} Δ H = Δ H_{G} + Δ H_{4 π M_{e ff}} + Δ H_{θ_{M}} + Δ H_{TMS} \end{matrix}

…”

Section: Resultsmentioning

confidence: 99%

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Sunlight Control of Ferromagnetic Damping in Photovoltaic/Ferromagnetic Heterostructures

Zhao

et al. 2022

Adv Funct Materials

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The inexorable trend of spintronics is to develop efficient spin-control methods. For example, photovoltaic spintronics driven by sunlight has great potential in energy-saving applications. Here, a ferromagnetic/PV heterojunction is prepared on Si-substrate as Ta (4 nm)/Co (1 nm)/ZnO (from 10 to 58 nm)/ PTB7-Th: PC 71 BM/Pt (3 nm) to study how visible light affected magnetic dynamics. A linewidth variation as high as 812.55 Oe is achieved by optimizing the thickness of ZnO film used to enhance the electron transfer. Due to the photovoltaic effect, reversible ferromagnetic resonance (FMR) linewidth switches are displayed, which is attributed to the 3d orbitals occupancy of Co induced the TMS contribution and inhomogeneous broadening. This work proposes a sunlight controllable magnetic damping heterostructure for developing fast, small, energy-efficient spintronics applications.

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“…The angular dependence of FMR linewidth for multilayer films can be presented in the following formula, [ 28,45–48 ]

\begin{matrix} Δ H = Δ H_{G} + Δ H_{4 π M_{e ff}} + Δ H_{θ_{M}} + Δ H_{TMS} \end{matrix}

…”

Section: Resultsmentioning

confidence: 99%

“…The change of electron distribution at the interface due to the PV effect will influence the surface magnetic anisotropy associated with SOC and change the TMS damping. [ 4,26–28 ]…”

Section: Introductionmentioning

confidence: 99%

Sunlight Control of Ferromagnetic Damping in Photovoltaic/Ferromagnetic Heterostructures

Zhao

et al. 2022

Adv Funct Materials

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show abstract

“…The resistance of each Hall-bar was measured using a four-point method [52] and resistivity of Pt and W wedge layers was determined using a parallel resistors model and the method described by Kawaguchi et al [53]. The Pt and W resistivities analysis yielded 30 µΩcm [20,[53][54][55][56] and 174 µΩcm [56][57][58][59], respectively. The Co resistivity has varied from 28 to 58 µΩcm depending on HM underlayer [20].…”

Section: Methodsmentioning

confidence: 99%

Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque

Grochot,

Karwacki,

Łazarski

et al. 2020

Preprint

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In this work, we study magnetization switching induced by spin-orbit torque in heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer. Using current-driven switching, magnetoresistance and anomalous Hall effect measurements, perpendicular and in-plane exchange bias field were determined. Several Hall-bar devices possessing in-plane exchange bias from both systems were selected and analyzed in relation to our analytical switching model of critical current density as a function of Pt and W thickness, resulting in estimation of effective spin Hall angle and effective perpendicular magnetic anisotropy. Approximately one order of magnitude smaller critical switching current densities in Wthan Pt-based Hall-bar devices were found due to a higher effective spin Hall angle in W structures. The current switching stability and training process are discussed in detail.

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“…Considering that α ∝ t SP 1 FM and α ∝ t TMS 1 FM 2 , where t FM is the thickness of the ferromagnetic layer, 17 a notable damping enhancement can be observed within ultrathin films. 18,19 Suppressing α SP and α TMS is thereby a dominant way of obtaining low-damping spintronic devices.…”

Section: ■ Introductionmentioning

confidence: 99%

Suppressing Magnetic Damping Related to Two-Magnon Scattering in Ultrathin NiFe Films by Interface Engineering

Zhao

et al. 2022

J. Phys. Chem. C

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Designing the ferromagnetic/nonmagnetic (FM/NM) heterostructure with desirable low magnetic damping is important for spintronic devices to reduce the critical current density of magnetization switching. For ultrathin FM/NM films, magnetic damping from the two-magnon scattering (TMS) effect is a critical component, and suppressing TMS damping becomes one of the crucial ways to achieve low damping. In this paper, we have demonstrated the depressed linewidth in Ta (1 nm)/NiFe (3 nm)/NM (4 nm)/Ta (1.5 nm) heterostructure with Cu instead of Pt as the NM layer, where the maximal linewidth of ferromagnetic resonance (FMR) decreases from 440 to 190 Oe. And the decrease of TMS damping from 55 to 0 Oe is one of the main reasons for the lower FMR linewidth. The nonzero surface magnetic anisotropy implies that the suppression of interfacial defect scattering causes reduced TMS damping. Meanwhile, a noticeable enhancement of TMS damping from the lack of seed layer may be due to the lattice structure change. Thereby, our findings provide a way toward the design of low-damping spintronic devices.

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Thickness and angular dependent ferromagnetic resonance of ultra-low damping Co25Fe75 epitaxial films

Cited by 17 publications

References 29 publications

Sunlight Control of Ferromagnetic Damping in Photovoltaic/Ferromagnetic Heterostructures

Sunlight Control of Ferromagnetic Damping in Photovoltaic/Ferromagnetic Heterostructures

Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque

Suppressing Magnetic Damping Related to Two-Magnon Scattering in Ultrathin NiFe Films by Interface Engineering

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