Thickness and substrate effects on AlN thin film growth at room temperature

Abdallah, B.; Duquenne, C.; Besland, Marie-Paule; Gautron, Éric; Jouan, Pierre-Yves; Tessier, Pierre‐Yves; Brault, J.; Cordier, Y.; Djouadi, M. A.

doi:10.1051/epjap:2008082

Cited by 43 publications

(21 citation statements)

References 11 publications

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“…12 The same was now also observed with films grown on Si͑111͒. 13 In both cases, AlN films at larger thickness tend to become tensile with a reduction in piezoelectric properties. In view of the present work, one can argue that roughness increases at a certain thickness beyond a critical value, above which low-density grain boundaries start to appear.…”

Section: B Properties Of Aln Films Grown On the Si Layersupporting

confidence: 63%

Effect of substrate roughness on c-oriented AlN thin films

Artieda

Barbieri

Sandu

et al. 2009

Journal of Applied Physics

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Articles you may be interested inEffect of anion-to-cation supplying ratio on the surface morphology of AlN films grown on ZnO substrates at low temperature J.Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy ͑001͒-textured AlN thin films as needed for bulk acoustic wave devices exhibit large mechanical stress variations as a function of growth substrate properties. We studied the relationship between stress and the surface morphology of a thermally oxidized silicon substrate that was modified by a thin amorphous silicon layer. A rms roughness of 0.1-1.1 nm of the latter resulted in an increase in mechanical stress in the subsequently sputtered AlN thin film going from Ϫ700 to +200 MPa. At the same time, the x-ray rocking curve width of AlN increased from 1.3°to 2.3°. The roughness of the Si interlayer was controlled by the Ar sputter pressure. Interestingly, the maximal roughness is obtained at an intermediate pressure. This is explained by an interplay of nucleation and diffusion phenomena governed by the kinetics of impinging atoms and ions. The Si interlayer was essential to avoid cracking of membranes exhibiting mixed Pt and SiO 2 surfaces below the AlN film.

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Section: B Properties Of Aln Films Grown On the Si Layersupporting

confidence: 63%

Effect of substrate roughness on c-oriented AlN thin films

Artieda

Barbieri

Sandu

et al. 2009

Journal of Applied Physics

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“…Indeed, AlN (103) asymmetric XRD lines are now visible; on a 10 nm nucleation layer, the FWHM is reduced from 1.6° to 1.46° when PVD AlN thickness increased from 300 nm to 450 nm. The present results push further the previous studies made on thick epitaxial AlN layers [7] and AlGaN layers [1] and show that a relationship between AlN crystal quality and its residual strain makes necessary trade-offs between the thickness and theses parameters. Furthermore, the results confirm that the present limitation of the PVD process is the nucleation on the silicon substrate and an AlN epitaxial layer as thin as 10 nm can solve this issue.…”

Section: Pvd Growth On Mbe Aln Nucleation Layerssupporting

confidence: 89%

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Cordier

Frayssinet

Chmielowska

et al. 2014

Phys. Status Solidi C

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In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition (magnetron sputtering). It is shown that it is possible to grow thick AlN seed layers with a good in-plane crystal ordering. GaN based structures on silicon can then be regrown with device quality active layers, as attested by the realization of high electron mobility transistors. Furthermore, the low substrate bowing achieved with these structures is of high interest for the fabrication of large GaN-on-silicon wafers

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“…Therefore, the compressive strain reduction associated with crystallite coalescence would be more prominent for the ∼1400 nm thick CeO 2 coating. The column boundaries (inter-column gaps) would become more open and limit the grain coalescence between columns to facilitate an evolution of compressive stress toward a more tensile state for the ∼1400 nm thick CeO 2 coating [27,56]. However, this reduction of compressive strain is still less effective compared to the increased compressive strains induced by the other factors previously discussed.…”

Section: Structure (Xrd)mentioning

confidence: 99%