Thickness dependence of crystal and optical characterization on ZnO thin film grown by atomic layer deposition

Baek, Seung‐Hye; Lee, Hyun-Jin; Lee, Sung‐Nam

doi:10.1063/1.5025685

Cited by 18 publications

(6 citation statements)

References 27 publications

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“…47,51 Secondly, narrowing of the E g could be ascribed to increasing film density because volume effect decreased with additional Ga atoms supplied and oxidized on the surface (Figs. 3 and 4), as supported by other literature reports on ZnO material, 52,53 and consistent with our previous report. 35 The density of charges increases with substrate coverage, and then every electron is effectively surrounded by an exchange correlating hole that lowers the energy level of the electron and the conduction band is shifted downwards, thereby narrowing the E .…”

Section: Uv-vissupporting

confidence: 93%

Deposition of Gallium Oxide Nanostructures at Low Substrate Temperature by Chemical Vapor Deposition

Jubu

Yam

Moses

2020

ECS J. Solid State Sci. Technol.

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Semiconductor nanostructures (NSs) are usually synthesized at short source-substrate distances where the substrate temperature is high using the chemical vapor deposition (CVD) technique. Herein, we report for the first time the growth of β -Ga2O3 NSs at low substrate temperature ∼260 °C in a CVD system when gallium (III) oxide powder was reduced to Ga vapor at 1000 °C under hydrogen atmosphere. The polycrystalline nature of the Ga2O3 NSs was confirmed by high-resolution X-ray diffraction (HR-XRD) analysis. Appearance of additional diffraction planes, increasing X-ray diffraction signal strength and shift of 2θ to smaller angles was observed with increasing hydrogen supply in the reactor. Field-emission scanning electron microscope (FE-SEM) revealed different morphologies with increasing amount of Ga2O3 on the substrate. Elemental analysis by using energy dispersive X-ray spectroscopy (EDX) showed increasing Ga atoms, and Ga/O atomic ratio with increase in hydrogen gas flow rate. Optical reflectance measurements by UV–vis-NIR spectrophotometer revealed optical bandgaps ranging from 4.94 to 4.82 eV, attributed to increasing film compactness, Ga/O and oxygen vacancies on the prepared films.

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Section: Uv-vissupporting

confidence: 93%

Deposition of Gallium Oxide Nanostructures at Low Substrate Temperature by Chemical Vapor Deposition

Jubu

Yam

Moses

2020

ECS J. Solid State Sci. Technol.

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“…The cross section of (αhυ) 2 versus the photon energy, as shown in Figure 5c, gives the E g values listed in Table 1 for all four ZnO/Al 2 O 3 composites. The average E g of the ZnO in all ZnO/Al 2 O 3 photocatalysts was found to be about 3.25 eV, which is lower than the value for bulk ZnO (3.3 eV), but in agreement with literature data for ultrathin ALD ZnO layers [18].…”

Section: Characterization Of Zno/al2o3supporting

confidence: 88%

Effects of Anodic Aluminum Oxide Substrate Pore Geometry on the Gas-Phase Photocatalytic Activity of ZnO/Al2O3 Composites Prepared by Atomic Layer Deposition

et al. 2021

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We report on the photocatalytic activity of ZnO layers deposited by atomic layer deposition on a porous anodic aluminum oxide substrate with hexagonal pore symmetry and varied pore dimensions. ZnO/Al2O3 composites were prepared with pore diameters in the range 93–134 nm and interpore distance in the range 185–286 nm, and their photocatalytic activity was measured for gas-phase photocatalytic oxidation of acetaldehyde at varying UV illumination intensities (0.08–3.94 mW cm−2). The results show that substrates with narrower pore diameters (<115 nm, in the case of this study) have a detrimental effect on the photocatalyst performance, despite their higher effective surface. The results are explained on the basis of limited mass transfer inside the porous structure and can be used as a guideline in the purposeful design of photocatalysts with a nanoporous or nanotubular structure.

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“…Lastly, a variation from 160 to 200 nm introduced a small increase of 0.33 mA/cm 2 . On the other hand, as the thickness of ZnO changed from 14.2 to 62.7 nm, the band gap energy increased from 3.22 to 3.26 eV [45]. It is known that in semiconductors with band gaps greater than 1.56 eV, the absorption coefficient and the transmission coefficient should decrease as the band gap energy decreases.…”

Section: Impact Of Emitter Layer Thickness On Short Circuit Currentmentioning

confidence: 99%

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Gulomov¹,

Accouche²,

Алиев³

et al. 2023

Computers, Materials &Amp; Continua

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Today, it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-based heterojunction solar cells, at a lower cost. Therefore, the aim of this paper is to analyze CH 3 NH 3 PbI 3 and ZnO materials as an emitter layer for p-type silicon wafer-based heterojunction solar cells. CH 3 NH 3 PbI 3 and ZnO can be synthesized using the cheap Sol-Gel method and can form n-type semiconductor. We propose to combine these two materials since CH 3 NH 3 PbI 3 is a great light absorber and ZnO has an optimal complex refractive index which can be used as antireflection material. The photoelectric parameters of n-CH 3 NH 3 PbI 3 /p-Si, n-ZnO/p-Si, and n-Si/p-Si solar cells have been studied in the range of 20-200 nm of emitter layer thickness. It has been found that the short circuit current for CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si solar cells is almost the same when the emitter layer thickness is in the range of 20-100 nm. Additionally, when the emitter layer thickness is greater than 100 nm, the short circuit current of CH 3 NH 3 PbI 3 /p-Si exceeds that of n-ZnO/p-Si. The optimal emitter layer thickness for n-CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si was found equal to 80 nm. Using this value, the short-circuit current and the fill factor were estimated around 18.27 mA/cm 2 and 0.77 for n-CH 3 NH 3 PbI 3 /p-Si and 18.06 mA/cm 2 and 0.73 for n-ZnO/p-Si. Results show that the efficiency of n-CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si solar cells with an emitter layer thickness of 80 nm are 1.314 and 1.298 times greater than efficiency of traditional n-Si/p-Si for the same sizes. These findings will help perovskites materials to be more appealing in the PV industry and accelerate their development to become a viable alternative in the renewable energy sector.

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Thickness dependence of crystal and optical characterization on ZnO thin film grown by atomic layer deposition

Cited by 18 publications

References 27 publications

Deposition of Gallium Oxide Nanostructures at Low Substrate Temperature by Chemical Vapor Deposition

Deposition of Gallium Oxide Nanostructures at Low Substrate Temperature by Chemical Vapor Deposition

Effects of Anodic Aluminum Oxide Substrate Pore Geometry on the Gas-Phase Photocatalytic Activity of ZnO/Al2O3 Composites Prepared by Atomic Layer Deposition

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

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