Thickness dependence of the ferroelectric PbTiO3 thin films on the dipolar relaxation in the microwave-frequency range

Abstract

The effects of film thickness on the dipolar relaxation of ferroelectric PbTiO3 thin films were investigated in the microwave-frequency range. The real and imaginary dielectric constants (ε′–iε″) were measured up to 30GHz using interdigital capacitors on high-quality SiO2. As the polycrystalline PbTiO3 film thickness increased from 42 to 407nm, the dipolar-relaxation frequency reduced with increasing grain size. The observed relaxation behavior for ε′–iε″ was explained in terms of the convolution of Debye relaxation. The relaxation frequency in the thin films was higher than the previous values reported in bulk PbTiO3, due to the smaller grain size of the thin films.

Dielectric Relaxation of ALD HfO2 Thin Films from 1 kHz to 5 GHz

“…The dielectric constants of HfO 2 thin films clearly show a powerlaw dependence known as the Curie-von Schweidler law ( 1 n f ), where the value of the exponent (n) means the degree of dielectric relaxation. The dielectric loss can be given by the degree of dielectric relaxation in the dielectric constant ( ) 2 cot( tan n ) [3,4]. The HfO 2 films annealed in O 2 show the least frequency dispersion and the lowest loss, as shown in Fig.…”

Preparation and Characterization of Barium Strontium Titanate Thin Films by Chemical Solution Deposition

“…Different ferroelectrics, like SrBi 2 Nb 2 O 9 [2] or PbTiO 3 [3], have been studied, however, at present, BaSrTiO 3 (BST) is considered to be the most adapted material for this type of application [4][5][6][7].…”

Dielectric relaxation of atomic-layer-deposited HfO2 thin films from 1kHzto5GHz

“…12 The dielectric losses can be also obtained by the degree of relaxation in the dielectric constants ͓tan ␦ Ϸ cot͑n /2͔͒. 12 The dielectric losses can be also obtained by the degree of relaxation in the dielectric constants ͓tan ␦ Ϸ cot͑n /2͔͒.…”