2015
DOI: 10.1134/s1063783415080314
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Thickness dependence of the properties of epitaxial barium strontium titanate thin films

Abstract: Heteroepitaxial Ba x Sr 1 -x TiO 3 thin films of different thicknesses have been studied in the paraelectric phase at a temperature of 600°C. The lattice parameters of the film have nonlinear dependence on the thickness. The misfit strain and unit cell volume increase with decreasing thickness. The behavior of the misfit strain with variations in the thickness is well described in the model of the double electric layer formed during the synthesis of the film at the interface with the substrate.

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Cited by 7 publications
(3 citation statements)
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“…For the real heterostructure, the BST0.2 layer is clamped by the MgO substrate and BFO film. Note, that due to large differences in the bandgap width, an electric double layer is formed at the interface between MgO substrate and BST layers [30]. The parameters of such in-built electric layer depend on the deformation of the film that can be controlled by the technology of deposition.…”
Section: Resultsmentioning
confidence: 99%
“…For the real heterostructure, the BST0.2 layer is clamped by the MgO substrate and BFO film. Note, that due to large differences in the bandgap width, an electric double layer is formed at the interface between MgO substrate and BST layers [30]. The parameters of such in-built electric layer depend on the deformation of the film that can be controlled by the technology of deposition.…”
Section: Resultsmentioning
confidence: 99%
“…Our suggestion is that, the enhancement of the critical temperature can be produced by the semiconducting charges, accumulated at the BST0.4/(001)MgO interface and producing the c-oriented build-in electric field, favorable for the polar phase formation. Existence of such field was convincingly demonstrated recently [30]. In addition, the large electrostriction of the polar perovskite oxides [31], arising from the built-in fields can result in additional deformation, amplifying the substrate-induced strain in region of field penetration.…”
Section: Originalmentioning
confidence: 96%
“…Определение упругих постоянных тонких пленок [1,2], исследование критических напряжений в пленках [3,4], разработка новых электроакустических и акустооптических преобразователей [5,6] и некоторые другие проблемы тесно связаны с расчетом напряженно-деформированного состояния пленки, вызванного упругими волнами. Распределение напряжений в твердом слое зависит от вида возможных упругих волн.…”
Section: Introductionunclassified