Thickness dependence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001)

Wolkenberg, A.; Przesławski, Tomasz; Kaniewski, J.; Bąk‐Misiuk, J.; Regiński, K.

doi:10.1016/s0921-5107(00)00498-0

Cited by 9 publications

(9 citation statements)

References 33 publications

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“…The purest samples are those that have the largest thickness. Such behaviour agrees with our previous observations [3,[27][28][29][30][31][32].…”

Section: Discussionsupporting

confidence: 93%

“…In 0.53 Ga 0.47 As layers were deposited by MBE on SI-InP and GaAs as well as SI-GaAs. We carried out the calculations as described previously [3] for a few samples of InAs, In 0.53 Ga 0.47 As and GaAs with different charge carrier concentrations [3,[26][27][28][29][30][31][32]. The procedure consisted of the following steps:…”

Section: Methodsmentioning

confidence: 99%

“…These sources form the parts used to solve the neutrality equation, and the solution is obtained by numerical computer calculation. The values of 2.14 ⋅ 10 such charge carrier sources are chosen such that the calculated concentration curve approximates the experimental data [3,[26][27][28][29][30][31][32], as demonstrated for our samples (Table 2) by the example in Figure 3. We believe that the measured conductivity is affected by the presence of different donors in the semiconductor layers.…”

Section: Introductionmentioning

confidence: 99%

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A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

Wolkenberg

2013

Journal of Materials

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An electrical conduction versus temperature model using a Hall device was developed. In the case of InAs, InGaAs, and GaAs MBE epilayers, the prediction agrees well with the experimental results. Herein, we explain here how these calculated fractions of total conductivity describe the measured values. The method allows for the calculation of the carrier concentration and mobility of each component of a multicarrier system. The extracted concentrations are used to characterise the different components of charge transport in the active layer. The conductance values G [S] of these components of charge transport were obtained. Also the scattering events for the investigated samples are presented. The analysis of the experimental results for three semiconductor compositions and different concentrations demonstrates the utility of our method in comparing the conductance of each component of the multilayered system as a function of temperature.

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“…The purest samples are those that have the largest thickness. Such behaviour agrees with our previous observations [3,[27][28][29][30][31][32].…”

Section: Discussionsupporting

confidence: 93%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

Wolkenberg

2013

Journal of Materials

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“…Parallel conduction in InAs is generally attributed to the presence of surface [1,6,[8][9][10] and/or [11] interface [3][4][5] electron accumulation layers. The observation of electron accumulation at clean InAs free surfaces is well documented, and various techniques [1,6,[8][9][10] have been used to study this phenomenon.…”

Section: Theorymentioning

confidence: 99%

“…This follows from the thickness [1][2][3][4][5] and magnetic field [1,6] dependence of Hall measurements carried out on InAs thin films, and the absence of carrier freezeout in temperature dependent Hall measurements [7]. These results are generally attributed to parallel conduction resulting from surface [1,6,[8][9][10] and interface effects [3][4][5]. Previously, work has been done on extracting the surface and bulk electrical properties of n-type InAs thin films directly from variable magnetic field Hall measurements [11].…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of InAs thin films

Botha

Shamba

Botha

2008

Phys. Status Solidi (c)

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It is known that parallel conduction as a result of surface and /or interface charge accumulation significantly shields the bulk electrical properties of InAs thin films when characterized using Hall measurements. This parallel conduction in InAs can be modeled by using the two‐layer model of Nedoluha and Koch [Zeitschrift für Physik 132, 608 (1952)]; where an InAs epilayer is treated as consisting of two conductors connected in parallel viz. a bulk and a surface layer. Here, this two‐layer model is used to simulate Hall coefficient and conductivity data of InAs thin films ranging from strongly n‐doped (n = 1018 cm–3) to strongly p‐doped (p ∼ 1019 cm–3) material. Conventional Hall approximations, i.e. those that assume uniform conduction from a single band, are then used to predict the apparent carrier concentration and mobility that will be determined from conventional Hall measurements, with the aim of illustrating the error of such a simplified analysis of InAs Hall data. Results show that, in addition to ignoring parallel conduction, the approximations of conventional Hall data analysis have a further inadequacy for p‐type InAs, in that the high electron to hole mobility ratio in InAs is not taken into account. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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InAs-based p-n homojunction diodes: Doping effects and impact of doping on device parameters

Kim

Brown

2006

Journal of Elec Materi

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InAs heterojunction bipolar transistors (HBTs) are promising candidates for low power and high frequency (THz) device applications due to their small bandgap, high electron mobility, and high saturation drift velocity. However, doping limits such as the trade-off between desired low intentional n-type concentrations and unintentional doping, and the realization of high p-type concentrations, must still be considered in device design and synthesis. In order to observe the impact of intentional and unintentional n-type doping on diode electrical properties, InAs-based homojunction diodes have been grown on InAs substrates by solid-source molecular beam epitaxy (SSMBE) and were subsequently fabricated and characterized.

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Thickness dependence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001)

Cited by 9 publications

References 33 publications

A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

Electrical characterization of InAs thin films

InAs-based p-n homojunction diodes: Doping effects and impact of doping on device parameters

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