2007
DOI: 10.1016/j.jmmm.2007.03.196
|View full text |Cite
|
Sign up to set email alerts
|

Thickness-dependent magnetization reversal in CoZrNb amorphous films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
1
0

Year Published

2007
2007
2018
2018

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 13 publications
(1 citation statement)
references
References 26 publications
0
1
0
Order By: Relevance
“…[25][26][27][28][29] It is an ideal MFC material for solid-state magnetic sensors. 30,31 Following previous studies, 32,33 we deposited a CoZrNb amorphous thin film using a 99.95%-purity sputtering target. To optimize its growth condition, we first deposited a CoZrNb film on oxidized silicon wafers and measured its magnetic properties using vibrating sample magnetometry (VSM).…”
mentioning
confidence: 99%
“…[25][26][27][28][29] It is an ideal MFC material for solid-state magnetic sensors. 30,31 Following previous studies, 32,33 we deposited a CoZrNb amorphous thin film using a 99.95%-purity sputtering target. To optimize its growth condition, we first deposited a CoZrNb film on oxidized silicon wafers and measured its magnetic properties using vibrating sample magnetometry (VSM).…”
mentioning
confidence: 99%