Thickness-dependent microstructures and electrical properties of CaCu3Ti4O12 films derived from sol–gel process

CaCu3Ti4O12 ceramics from basic co-precipitation (BCP) method: Fabrication and properties

“…But if the excess Cu content in the initial powder increased, the CuO phase would thicken the grain boundary, resulting in the increased ratio (boundary thickness/grain size) and the decreased permittivity. Chang et al [30] established two mod- els (MFA, SFA) and demonstrated that the dielectric loss decreases with the increased ratio of boundary thickness to the grain size. Romero et al [31] found the IBLC model reveal the change of the intergranular phase, caused by a compositional change due to the incorporation of Cu into the CCTO grains.…”

Effects of rare earth ionic doping on microstructures and electrical properties of CaCu3Ti4O12 ceramics

“…As a result, increasing of barrier layer resistance is an effective method to decrease dielectric loss. The IBLC model is commonly accepted for ceramic samples and also on thin films [1,13]. In the case of single crystals, the presence of such layered structures is highly controversial, although it has been recently proposed that defect structures form layers that give rise to an IBLC-like effect [14].…”

Influence of zinc on electrical and microstructural properties of CaCu3Ti4O12 ceramics prepared by sol–gel process

“…Homes et al [3] have shown that the relative dielectric constant, ε r , of single crystalline CaCu 3 Ti 4 O 12 is close to 10 5 at frequencies below 20 kHz at 250 K. With the miniaturization of memory devices and the improvement of devices integration, low-dielectric-constant materials who have low storage density are gradually becoming less suitable in the development process, and the electronics industry is in need of more applicable materials. CCTO is a promising material, and it is being considered as a candidate for applications in dynamic random access memory (DRAM) in very large scale integrated (VLSI) circuits due to its large dielectric constant [1][2][3][4]. Chung et al have shown that CaCu 3 Ti 4 O 12 has an extremely strong nonlinear coefficient (˛), which is much greater than that of ZnO, a typical varistor material [5].…”