Abstract:Tin disulfide (SnS2) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS2 were investigated as a function of the film thickness. SnS2 exhibited a (001) hexagonal plane peak at 14.9° in the X-ray diffraction (XRD) results and an A1g peak at 311 cm−1 in the Raman spectra. These results demonstrate that SnS2 thin films grown at 150 °C showed a crystalline phase at film thicknesses above 11.2 nm. The crystall… Show more
“…Futhermore, the thin film has exhibited an absorption coefficient (α) of 10 4 cm -1 . The Eg value has been reported around 1.3 eV for SnS and 2.4 for SnS2 thin film (Seo et al, 2017;Wang et al, 2017). Therefore, the Eg and α values of the SnS2 thin film are in good aggreement with those reported previously (Reddy et al, 2018).…”
Section: Methodssupporting
confidence: 76%
“…It is calibrated using a certified silicon reference cell, with a Keithley 2400 source-meter unit inside the glove box. 001) and ( 002) crystallographic planes of hexagonal phases, respectively (Seo et al, 2017;. The values of Full Width at Half Maximum (FWHM) of the dominant peaks have determined to obtain average grain size.…”
In this study, the SnS2 thin film deposited by spray pyrolysis technique has been analyzed by XRD, SEM and UV-visible characterization techniques to investigate of structural, morphological and optical properties. The thin film has dominant ( 001) and ( 002) crystallographic planes, compact grain-like morphology with uniform and good coverage surface and 2.42 eV band gap. The Sn/SnS2/Si/Au-Sb structure has been characterized by electrical measurement. The diode has ideality factor of 1.34 and barrier height of 0.762 eV with reverse-bias current temperature-dependent strongly. In addition, the ITO/SnS2/Si/Au-Sb structure has been characterized by 1.5 AM solar simulator for determine of solar light sensitivity. The diode under 100 mW/cm 2 solar-light source has exhibited 0.24% PCE with Jsc of 1.83 mA/cm 2 , Voc of 0.46 V and FF of 0.28.
“…Futhermore, the thin film has exhibited an absorption coefficient (α) of 10 4 cm -1 . The Eg value has been reported around 1.3 eV for SnS and 2.4 for SnS2 thin film (Seo et al, 2017;Wang et al, 2017). Therefore, the Eg and α values of the SnS2 thin film are in good aggreement with those reported previously (Reddy et al, 2018).…”
Section: Methodssupporting
confidence: 76%
“…It is calibrated using a certified silicon reference cell, with a Keithley 2400 source-meter unit inside the glove box. 001) and ( 002) crystallographic planes of hexagonal phases, respectively (Seo et al, 2017;. The values of Full Width at Half Maximum (FWHM) of the dominant peaks have determined to obtain average grain size.…”
In this study, the SnS2 thin film deposited by spray pyrolysis technique has been analyzed by XRD, SEM and UV-visible characterization techniques to investigate of structural, morphological and optical properties. The thin film has dominant ( 001) and ( 002) crystallographic planes, compact grain-like morphology with uniform and good coverage surface and 2.42 eV band gap. The Sn/SnS2/Si/Au-Sb structure has been characterized by electrical measurement. The diode has ideality factor of 1.34 and barrier height of 0.762 eV with reverse-bias current temperature-dependent strongly. In addition, the ITO/SnS2/Si/Au-Sb structure has been characterized by 1.5 AM solar simulator for determine of solar light sensitivity. The diode under 100 mW/cm 2 solar-light source has exhibited 0.24% PCE with Jsc of 1.83 mA/cm 2 , Voc of 0.46 V and FF of 0.28.
“…3a). The 3d 5/2 transition was deconvoluted into three peaks at BE values 483.8 eV, 485.6 eV, and 486.5 eV, corresponding to the Sn oxidation state of 0, + 2 and + 4, respectively 11,12 . The XPS analysis suggests that the dominant phase is SnS for the thin film deposited at 180 °C; however, the formation of metallic Sn in notable quantities was also evident.Figure 3X-ray photoelectron spectroscopy spectra of Sn 3d region for ( a ) SnS x @NF-180 and ( b ) SnS x @NF-160; S 2p region for ( c ) SnS x @NF-180 and ( d ) SnS x @NF-160.…”
Layered Sn-based chalcogenides and heterostructures are widely used in batteries and photocatalysis, but its utilizations in a supercapacitor is limited by its structural instability and low conductivity. Here, SnS
x
thin films are directly and conformally deposited on a three-dimensional (3D) Ni-foam (NF) substrate by atomic layer deposition (ALD), using tetrakis(dimethylamino)tin [TDMASn, ((CH
3
)
2
N)
4
Sn] and H
2
S that serves as an electrode for supercapacitor without any additional treatment. Two kinds of ALD-SnS
x
films grown at 160 °C and 180 °C are investigated systematically by X-ray diffractometry, Raman spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy (TEM). All of the characterization results indicate that the films deposited at 160 °C and 180 °C predominantly consist of hexagonal structured-SnS
2
and orthorhombic-SnS phases, respectively. Moreover, the high-resolution TEM analyses (HRTEM) reveals the (001) oriented polycrystalline hexagonal-SnS
2
layered structure for the films grown at 160 °C. The double layer capacitance with the composite electrode of SnS
x
@NF grown at 160 °C is higher than that of SnS
x
@NF at 180 °C, while pseudocapacitive Faradaic reactions are evident for both SnS
x
@NF electrodes. The superior performance as an electrode is directly linked to the layered structure of SnS
2
. Further, the optimal thickness of ALD-SnS
x
thin film is found to be 60 nm for the composite electrode of SnS
x
@NF grown at 160 °C by controlling the number of ALD cycles. The optimized SnS
x
@NF electrode delivers an areal capacitance of 805.5 mF/cm
2
at a current density of 0.5 mA/cm
2
and excellent cyclic stability over 5000 charge/discharge cycles.
“…So far, only a single research group has deposited SnS 2 by ALD using Sn(NMe 2 ) 4 and H 2 S as precursors at 150 °C with improved film quality achieved through postdeposition annealing in S or H 2 S atmosphere. Nevertheless, many crucial features of film deposition, including conformality, uniformity, and thickness control have not been demonstrated for 2D SnS 2 films.…”
Semiconducting 2D materials, such as SnS , hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few-layer SnS films has remained a great challenge. Herein, continuous wafer-scale 2D SnS films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low-temperature (250 °C) postdeposition annealing. Uniform coating of large-area and 3D substrates is demonstrated owing to the unique self-limiting growth mechanism of atomic layer deposition. Detailed characterization confirms the 1T-type crystal structure and composition, smoothness, and continuity of the SnS films. A two-stage deposition process is also introduced to improve the texture of the films. Successful deposition of continuous, high-quality SnS films at low temperatures constitutes a crucial step toward various applications of 2D semiconductors.
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