Thickness dependent surface morphologies and luminescent properties of ZnSe epilayers grown on (001) GaAs by metalorganic chemical vapor phase deposition

Zhang, X.B.; Ha, Kwang; Hark, S. K.

doi:10.1016/s0022-0248(01)00723-0

Cited by 8 publications

(2 citation statements)

References 14 publications

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“…It was also termed as Y 0 line, and was related to misfit dislocations [6]. The broad emission ranges from 2.5 eV to 1.9 eV is associated with the deep level emission (DLE), which may have an origin in cation-vacancy related complexes [7]. The inserted figure in Fig.…”

Section: Resultsmentioning

confidence: 99%

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Growth of High Quality ZnSe Epilayer on Si (100)

Yang

et al. 2006

ECS Trans.

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Growth of high quality ZnSe epilayer on Ge/GeSi/Si (100) was demonstrated by using low temperature migration enhance epitaxy (LT-MEE) and LT-ZnSe buffer layer. In this study, the low dislocation density of Ge/GeSi/Si structure was grown utilizing an ultrahigh vacuum chemical vapor deposition (UHV/CVD) system. The LT-MEE and LT-ZnSe buffer layer was grown employing molecular beam epitaxy (MBE) system for suppressing the formation of the deep-level emission (DLE) in the ZnSe/Ge/GeSi/Si structure. The low-temperature PL measurements indicate that the sample with a LT-MEE and LT-ZnSe buffer layer can improve its optical characteristic effectively. The X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) results indicate that the use of a LT-MEE and LT-ZnSe buffer layer markedly improves the crystallinity of the ZnSe epilayer and reduced the number of dislocations in ZnSe epilayer grown-up on Ge/GeSi/Si.

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Section: Resultsmentioning

confidence: 99%

“…These phenomena can be obtained by low-temperature (LT) photoluminescence (PL) measurement. The light emission of the Y 0 line [6] and deep-level emission (DLE) [7] was induced by the defects. That reduces the device performances, for example, shortening of lifetime and decreasing of radiative intensity.…”

Section: Introductionmentioning

confidence: 99%