Thickness-dependent surface proton conduction in (111) oriented yttria-stabilized zirconia thin film

Takayanagi, Makoto; Tsuchiya, Takashi; Kawamura, Kohei; Minohara, Makoto; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

doi:10.1016/j.ssi.2017.09.003

Cited by 27 publications

(38 citation statements)

References 46 publications

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“…YSZTF annealed at 500°C was thinner than the one prepared with 400°C. Similar observation was made by Takayanagi et al [50] where a correlation between the contraction of the cell in Y-O and Zr-O TFs was established. Thinner film with smaller particles and grains were also observed because more SiO 2 /YSZ interface was distorted into the lattice.…”

Section: Tem Imagessupporting

confidence: 86%

Annealing temperature induced improved crystallinity of YSZ thin film

Rusli

Muhammad

Ghoshal

et al. 2020

Mater. Res. Express

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Six YSZ thin films (YSZTFs) were prepared at varied annealing temperature (380°C to 600°C) by radio frequency magnetron sputtering method. Glancing angle x-ray diffraction (GAXRD) pattern revealed the polycrystalline nature of all films with crystallite size in the range of 9 to 15 nm. Sample annealed at 400°C displayed the lowest microstrain (0.262) and crystallinity (60%). FESEM images disclosed dense, homogeneous and crack free growth of annealed samples compared to as-deposited one. EDX spectra detected the right elemental compositions of films. AFM images showed growth evolution of YSZ grains with size range between 0.2 to 5 nm and improved films' surface roughness. HRTEM measurement of the studied YSZTFs exhibited lattice orientation and atomic structure of nucleated YSZ nanocrystallites. Furthermore, film annealed at 500°C divulged less oriented structure because of dislocation.

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Section: Tem Imagessupporting

confidence: 86%

Annealing temperature induced improved crystallinity of YSZ thin film

Rusli

Muhammad

Ghoshal

et al. 2020

Mater. Res. Express

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“…The existence of the OHpeak indicates that the oxygen components of the thin films involve the O-H bond. Such peak structure has been reported in yttria-stabilized zirconia and ceria thin films where the surface proton conduction was observed at RT region [23][24][25][26].…”

Section: Resultssupporting

confidence: 78%

“…12. This behavior has been explained by Grotthus mechanism that the proton physisorbed from air atmosphere migrates by hopping process at the defect surface [25]. Thus, this result indicates that the proton is absorbed and diffuse into the Pt/Ti0.99Sc0.01O2-/Pt multilayer.…”

Section: Resultsmentioning

confidence: 68%

Pulse-Induced Resistivity Modulation of Pt/Ti0.99Sc0.01O2-δ/Pt Multilayer with Electron-Ion Mixed Conduction

Kawamura

Tsuchiya

Sekine

et al. 2019

Trans. Mat. Res. Soc. Japan

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Pulsed-induced resistivity modulation of a Pt/Ti0.99Sc0.01O2-/Pt multilayer with a cross-point structure was investigated. This multilayer exhibits nonlinear current-voltage characteristic based on the Schottky barrier at the Pt/Ti0.99Sc0.01O2- interface. When the electrical pulses of 1.5 V were applied with short interval time of 10 s, the resistivity modulation corresponding to the long-termmemorization (LTM) were observed. X-ray photoemission spectroscopy showed O-H bond that contributes to electron-proton mixed conduction at the Pt/Ti0.99Sc0.01O2- interface. This LTM resistivity modulation is considered to be due to the local proton migration at the Pt/Ti0.99Sc0.01O2- interface, and the operation voltage is lower than that of the reported oxide multilayer.

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“…Recently, high proton conductivity was observed for porous and nanocrystalline CeO 2-δ and Y-stabilized ZrO 2 (YSZ) below 100°C, including the room temperature region [14][15][16][17][18][19][20][21][22][23][24][25]. Although the detailed mechanism is still an open question, such conduction is believed to result from the surface adsorption of water molecules.…”

Section: Introductionmentioning

confidence: 99%

Surface Proton Conduction of Sm-Doped CeO2-δ Thin Film Preferentially Grown on Al2O3 (0001)

et al. 2020

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Sm-doped CeO 2-δ (Ce 0.9 Sm 0.1 O 2-δ ; SDC) thin films were prepared on Al 2 O 3 (0001) substrates by radio frequency magnetron sputtering. The prepared thin films were preferentially grown along the [111] direction, with the spacing of the (111) plane (d 111) expanded by 2.6% to compensate for a lattice mismatch against the substrate. The wet-annealed SDC thin film, with the reduced d 111 value, exhibited surface protonic conduction in the lowtemperature region below 100°C. The O1s photoemission spectrum exhibits H 2 O and OH − peaks on the SDC surface. These results indicate the presence of physisorbed water layers and the generation of protons on the SDC (111) surface with oxygen vacancies. The protons generated on the SDC surface were conducted through a physisorbed water layer by the Grotthuss mechanism.

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Thickness-dependent surface proton conduction in (111) oriented yttria-stabilized zirconia thin film

Cited by 27 publications

References 46 publications

Annealing temperature induced improved crystallinity of YSZ thin film

Annealing temperature induced improved crystallinity of YSZ thin film

Pulse-Induced Resistivity Modulation of Pt/Ti<sub>0.99</sub>Sc<sub>0.01</sub>O<sub>2-δ</sub>/Pt Multilayer with Electron-Ion Mixed Conduction

Surface Proton Conduction of Sm-Doped CeO2-δ Thin Film Preferentially Grown on Al2O3 (0001)

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