Thickness dependent thermal conductivity of gallium nitride

Ziade, Elbara; Yang, Jia; Brummer, Gordie; Nothern, Denis; Moustakas, T. D.; Schmidt, Aaron J.

doi:10.1063/1.4974321

Cited by 82 publications

(57 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The thermal conductivity is the key material parameter of such heat flux computations. It is relatively high in perfect GaN crystals, but drops significantly due to phonon scattering at dopants [ 114 ], defects [ 115 ], and interfaces [ 116 ]. Bulk ternary layers suffer from strong alloy scattering of phonons ( Figure 11 ) [ 117 ].…”

Section: Self-heating Modelsmentioning

confidence: 99%

Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges

Piprek¹

2020

Materials

View full text Add to dashboard Cite

Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, biotechnology, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been developed for efficiency analysis and GaN-LED design optimization, including carrier transport models, quantum well recombination models, and light extraction models. This invited review paper provides an overview of the modeling landscape and pays special attention to the influence of III-nitride material properties. It thereby identifies some key challenges and directions for future improvements.

show abstract

Section: Self-heating Modelsmentioning

confidence: 99%

Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges

Piprek¹

2020

Materials

View full text Add to dashboard Cite

show abstract

“…These interfacial modes can significantly enhance thermal boundary conductance. b) Experimentally measured thermal boundary conductance versus ratio of the elastic moduli of the two constituent materials (Si/SiO 2 , SiO 2 /Al 2 O 3 , Al/Diamond, Pt/Diamond, Al/SiC, Au/GaN, Al/Ge, GaN/SiC, TiN/MgO, SRO/STO, Pt/Al 2 O 3 , ZnO/GaN, ZnO/HQ/ZnO, Si/vdW (van der Waals interface)/Si, Bi/Si, Mo/Si, Al/Si, Ni/Si, Cr/Si, Pt/Si, Au/Si, NiSi/Si and CoSi 2 /Si).…”

Section: Introductionmentioning

confidence: 99%

A Review of Experimental and Computational Advances in Thermal Boundary Conductance and Nanoscale Thermal Transport across Solid Interfaces

Giri

Hopkins

2019

Adv Funct Materials

219

152

View full text Add to dashboard Cite

Interfacial thermal resistance is the primary impediment to heat flow in materials and devices as characteristic lengths become comparable to the mean‐free paths of the energy carriers. This thermal boundary conductance across solid interfaces at the nanoscale can affect a plethora of applications. The recent experimental and computational advances that have led to significant atomistic insights into the nanoscopic thermal transport mechanisms at interfaces between various types of materials are summarized. The authors focus on discussions of works that have pushed the limits to interfacial heat transfer and drastically increased the understanding of thermal boundary conductance on the atomic and nanometer scales near solid/solid interfaces. Specifically, the role of localized interfacial modes on the energy conversion processes occurring at interfaces is emphasized in this review. The authors also focus on experiments and computational works that have challenged the traditionally used phonon gas models in interpreting the physical mechanisms driving interfacial energy transport. Finally, the authors discuss the future directions and avenues of research that can further the knowledge of heat transfer across systems with broken symmetries.

show abstract

“…[13][14][15][16] In addition, nothing is known about the effect of layer thickness and phonon-boundary scattering in a) Electronic mail: dat.tran@liu.se Al x Ga 1−x N. The latter have been shown to play a critical role for GaN, where significant reduction of thermal conductivity with decreasing film thickness was observed. 17,18 We note that Al x Ga 1−x N layers with variable thicknesses are needed for optimizing thermal resistance across HEMT, Schottky diode, and p-i-n diode structures for power devices.…”

mentioning

confidence: 99%

Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness

Dat

Carrascon

Muth

et al. 2020

Applied Physics Letters

View full text Add to dashboard Cite

Thermal conductivity of AlxGa1−xN layers with 0≤x≤0.96 and variable thicknesses is systematically studied by combined thermoreflectance measurements and a modified Callaway model. We find a reduction in the thermal conductivity of AlxGa1−xN by more than one order of magnitude compared to that of GaN, which indicates a strong effect of phonon-alloy scattering. It is shown that the short-mean free path phonons are strongly scattered, which leads to a major contribution of the long-mean free path phonons to the thermal conductivity. In thin layers, the long-mean free path phonons become efficiently scattered by the boundaries, resulting in a further decrease in the thermal conductivity. Also, an asymmetry of thermal conductivity as a function of Al content is experimentally observed and attributed to the mass difference between Ga and Al host atoms.

show abstract

Thickness dependent thermal conductivity of gallium nitride

Cited by 82 publications

References 24 publications

Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges

Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges

A Review of Experimental and Computational Advances in Thermal Boundary Conductance and Nanoscale Thermal Transport across Solid Interfaces

Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness

Contact Info

Product

Resources

About