We report a comparative study of the magnetoelectrical properties of epitaxial and polycrystalline thin films of lightly doped manganite La0.88Sr0.12MnO3 (LSMO). The LSMO thin films are deposited on single‐crystal LaAlO3 (LAO/(100)) and yttria‐stabilized ZrO2 (ZO/(100)) substrates by on‐axis DC magnetron sputtering from high‐density targets prepared by a wet chemical route. Films deposited on LAO (6 nm and 35 nm thick) are epitaxial and AFM investigations show clean surface morphology. In contrast, films on ZO (20 nm and 35 nm) are polycrystalline. Small variation in grain size is seen in the surface morphology of films on ZO. Both 6 nm and 35 nm thick films on LAO show sharp I–M transitions around the TC with TIM being 275 K and 285 K, respectively. The TIM of films on ZO is drastically suppressed as compared to the same for films on LAO. The large enhancement in TC and hence TIM of LSMO films on LAO has been explained in terms of the compressive strain arising due to the mismatch between the lattice parameters of LAO and LSMO. The absence of such strain in LSMO films on ZO accounts for the lower TIM values. The LSMO/LAO films also show large magnetoresistance only in the vicinity of the TIM and it decreases strongly on lowering and increasing the temperature. In contrast, the LSMO/ ZO films show relatively lower MR spreading over a wider temperature range. The electrical transport of all the films, both in the PM as well as the FM regions have been analyzed in the framework of several models and the suitability of each model has been discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)