Thickness-dependent tunable characteristics of (Ba0.5Sr0.5)0.925K0.075TiO3 thin films prepared by pulsed laser deposition

Sekhar, K. C.; Key, Sung Hun; Hong, Kyung Pyo; Han, Chan Su; Yook, Jong Min; Kim, Dong Soo; Kim, Jun Chul; Park, Jong Chul; Cho, Yong Soo

doi:10.1016/j.cap.2011.09.017

Cited by 10 publications

(2 citation statements)

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“…In the particular case of BST compositions with phase transitions near room temperature, characterization should include temperature‐dependent measurements since shifts of T C can cause large apparent changes to dielectric properties. Furthermore, processing conditions are commonly changed to modulate grain size, and the impact of those changes on the above parameters is not always elucidated, as will be discussed in Section . The interlinked nature of processing conditions, microstructure, device geometry, contact material, substrate, and dielectric properties requires careful consideration of all these effects.…”

Section: Domain Grain Size and Thickness Scaling Effectsmentioning

confidence: 99%

“…In Pb‐based ferroelectric thin films, where studies of extrinsic versus intrinsic responses are more extensive, many groups have assessed the thickness dependence of properties. Thickness dependence of properties is apparent in the dielectric response and also in the piezoelectric properties . For several compositions of PZT (polycrystalline morphotropic phase boundary, polycrystalline PLaZT 12/50/50 and PLaZT 12/30/70, polycrystalline PLaZT 5/30/70, epitaxial morphotropic phase boundary, and epitaxial PbZr 0.2 Ti 0.8 O 3 ) and related materials (0.30BiScO 3 –0.70PbTiO 3 and K 0.5 Na 0.5 NbO 3 ), representative properties for thin films as a function of thickness are compiled from the literature and are shown in Fig.…”

Section: Domain Grain Size and Thickness Scaling Effectsmentioning

confidence: 99%

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Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

et al. 2016

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Ferroelectric materials are well‐suited for a variety of applications because they can offer a combination of high performance and scaled integration. Examples of note include piezoelectrics to transform between electrical and mechanical energies, capacitors used to store charge, electro‐optic devices, and nonvolatile memory storage. Accordingly, they are widely used as sensors, actuators, energy storage, and memory components, ultrasonic devices, and in consumer electronics products. Because these functional properties arise from a noncentrosymmetric crystal structure with spontaneous strain and a permanent electric dipole, the properties depend upon physical and electrical boundary conditions, and consequently, physical dimension. The change in properties with decreasing physical dimension is commonly referred to as a size effect. In thin films, size effects are widely observed, whereas in bulk ceramics, changes in properties from the values of large‐grained specimens is most notable in samples with grain sizes below several micrometers. It is important to note that ferroelectricity typically persists to length scales of about 10 nm, but below this point is often absent. Despite the stability of ferroelectricity for dimensions greater than ~10 nm, the dielectric and piezoelectric coefficients of scaled ferroelectrics are suppressed relative to their bulk counterparts, in some cases by changes up to 80%. The loss of extrinsic contributions (domain and phase boundary motion) to the electromechanical response accounts for much of this suppression. In this article, the current understanding of the underlying mechanisms for this behavior in perovskite ferroelectrics is reviewed. We focus on the intrinsic limits of ferroelectric response, the roles of electrical and mechanical boundary conditions, grain size and thickness effects, and extraneous effects related to processing. In many cases, multiple mechanisms combine to produce the observed scaling effects.

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Section: Domain Grain Size and Thickness Scaling Effectsmentioning

confidence: 99%