Thickness effect of Yttria-Stabilized Zirconia as the electrolyte in all-solid-state thin-film supercapacitor with a wide operating temperature range

Arce, Jorge Luis Vázquez; Romo, Oscar Arturo; Solorio, Fernando; López-Mercado, César A.; Read, John; Domínguez, D.; Contreras-López, O.E.; Soto, G.; Tiznado, H.

doi:10.1016/j.jpowsour.2022.231555

Cited by 6 publications

(14 citation statements)

References 86 publications

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“…According to previous observations, our nanometer‐thick YSZ electrolytes are polycrystalline 49 . In addition, we have observed that the residual stress is modulated by varying thicknesses 13 . Therefore, the experimental diffusivity is expected to have a lower slope than the theoretical one.…”

Section: Resultssupporting

confidence: 51%

“…Also, Kosacki et al 71 demonstrated that the YSZ surface conducts more than the bulk so that when the thickness decreases, the surface effect predominates. In the previous work, 13 we found that decreasing the thickness produces residual compression stress, which positively impacts the conductivity of the YSZ.…”

Section: Ysz Electrolyte Thickness Effectmentioning

confidence: 68%

“…The result is consistent with established knowledge. The polarization of the YSZ electrolyte produces oxygen vacancy migration and an EDLC, 39 which in all‐solid‐state energy storage devices, has recently been exploited in micro‐supercapacitors 40 and nanometer‐supercapacitors 13 …”

Section: Resultsmentioning

confidence: 99%

“…49 In addition, we have observed that the residual stress is modulated by varying thicknesses. 13 Therefore, the experimental diffusivity is expected to have a lower slope than the theoretical one.…”

Section: Ysz Electrolyte Thickness Effectmentioning

confidence: 95%

“…The polarization of the YSZ electrolyte produces oxygen vacancy migration and an EDLC, 39 which in all-solid-state energy storage devices, has recently been exploited in micro-supercapacitors 40 and nanometersupercapacitors. 13 The remaining term is 𝑖 residual , which, as mentioned above, takes negative values. This term takes larger negative values as the temperature increases.…”

Section: Temperature Dependencementioning

confidence: 99%

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Investigation of diffusivity in nanometer‐thick yttria‐stabilized zirconia by chronoamperometry and its formalism

et al. 2023

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This work aims to demonstrate that chronoamperometry is a valuable tool for determining diffusivities in all‐solid‐state nanometer‐thick cells. The transient current in chronoamperometry of electrochemical cells under constant voltage is described by firstly considering purely capacitive processes, defined by RC circuit equations, and then purely diffusive processes, by Cottrell's equations. The physical meaning of the equations has been amply described in liquid cells with porous electrodes but scarcely in solid‐state cells. We studied Ru/YSZ/Au and Ru/YSZ/Ru parallel nano‐cells at temperatures between 50°C and 170°C and voltages between 0.5 V and 1.5 V, where non‐faradaic processes occur. The calculated diffusive and capacitive contributions at different temperatures obey the Arrhenius law. The activation energy was associated with vacancies, the major carrier during electrical transport. The analysis discusses other parameters, such as capacitance, effective concentration, and leakage current. The experimental diffusivity of YSZ electrolytes was compared with diffusivity values obtained by the statistical moment method.This article is protected by copyright. All rights reserved

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Section: Resultssupporting

confidence: 51%

Section: Ysz Electrolyte Thickness Effectmentioning

confidence: 68%

Section: Resultsmentioning

confidence: 99%

Section: Ysz Electrolyte Thickness Effectmentioning

confidence: 95%

Section: Temperature Dependencementioning

confidence: 99%

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Investigation of diffusivity in nanometer‐thick yttria‐stabilized zirconia by chronoamperometry and its formalism

et al. 2023

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Atomic Layer Deposition—A Versatile Toolbox for Designing/Engineering Electrodes for Advanced Supercapacitors

Ansari,

Hussain,

Mohapatra

et al. 2023

Advanced Science

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Atomic layer deposition (ALD) has become the most widely used thin‐film deposition technique in various fields due to its unique advantages, such as self‐terminating growth, precise thickness control, and excellent deposition quality. In the energy storage domain, ALD has shown great potential for supercapacitors (SCs) by enabling the construction and surface engineering of novel electrode materials. This review aims to present a comprehensive outlook on the development, achievements, and design of advanced electrodes involving the application of ALD for realizing high‐performance SCs to date, as organized in several sections of this paper. Specifically, this review focuses on understanding the influence of ALD parameters on the electrochemical performance and discusses the ALD of nanostructured electrochemically active electrode materials on various templates for SCs.It examines the influence of ALD parameters on electrochemical performance and highlights ALD's role in passivating electrodes and creating 3D nanoarchitectures. The relationship between synthesis procedures and SC properties is analyzed to guide future research in preparing materials for various applications. Finally, it is concluded by suggesting the directions and scope of future research and development to further leverage the unique advantages of ALD for fabricating new materials and harness the unexplored opportunities in the fabrication of advanced‐generation SCs.

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A Voltage‐Driven Transport Model to Identify Ion Migration as the Rate‐Limiting Step in Memristive Switching

Vazquez‐Arce,

Molina‐Reyes,

Contreras

et al. 2023

Adv Elect Materials

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The physics behind the switching kinetics of memristors is gradually becoming clearer. The periods required for the onset of electromigration within memristors and the activation or deactivation of the low‐resistance state—referred to as the incubation and switching times—exhibit non‐linearity with applied voltage. This behavior prevails depending on the rate‐limiting step comprising nucleation and filament growth, electron transfer at the electrode/electrolyte interface, and ion migration through the electrolyte. Herein, a model is introduced for ion migration as the rate‐limiting step. This model analyses the incubation time and analytically correlates it with the electric field, diffusion coefficient, and temperature, facilitating the determination of threshold voltage and diffusivity from high to low resistance states for ion migration as the rate‐limiting step. By exploring parallel plate cells with Yttria‐Stabilized Zirconia (YSZ) of nanometer thickness, the application of the model is illustrated and the fundamental equations are applied to outstanding memristive cells in the literature. The applicability of this model to cells of various charge carriers is proposed, ranging from vacancies and electron transport to oxygen ions and metal cations, denoting its potential importance.

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Thickness effect of Yttria-Stabilized Zirconia as the electrolyte in all-solid-state thin-film supercapacitor with a wide operating temperature range

Cited by 6 publications

References 86 publications

Investigation of diffusivity in nanometer‐thick yttria‐stabilized zirconia by chronoamperometry and its formalism

Investigation of diffusivity in nanometer‐thick yttria‐stabilized zirconia by chronoamperometry and its formalism

Atomic Layer Deposition—A Versatile Toolbox for Designing/Engineering Electrodes for Advanced Supercapacitors

A Voltage‐Driven Transport Model to Identify Ion Migration as the Rate‐Limiting Step in Memristive Switching

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