Thickness effect on stress, structural, electrical and sensing properties of (0 0 2) preferentially oriented undoped ZnO thin films

Al-Khawaja, S.; Abdallah, B.; Shaker, S. A.; Kakhia, M.

doi:10.1080/15685543.2015.1002259

Cited by 43 publications

(22 citation statements)

References 26 publications

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“…The thickness varied from 10 nm to 1200 nm. All the deposition conditions are summarized in a previous work 21 .…”

Section: Methodsmentioning

confidence: 99%

“…The stoichiometry (O/Zn about 1) was verified by EDX analysis. residual stress is a compressive stress that decreases with increasing thickness 21 .…”

Section: Methodsmentioning

confidence: 99%

“…The intensity of band gap emission increases with thickness (figure 4(a)) correspondingly FWHM decreases ( figure 4(b)) which indicate better quality i.e. The crystalline quality was found to improve, while the stress values decreased with increasing thickness 21,23,33 .…”

Section: Pl At Room Temperature (Rt)mentioning

confidence: 98%

“…Van der Pauw technique 22 has been used to estimate the room temperature resistivity ρ of the films where it increases with thickness as shown in figure 1(b). The conductivity of the films gets lower as the thickness increases due to reduction in the carrier concentration, which is inversely proportional to the resistivity, where it decreases from 2.975 to 0.2184 Ω cm for 1200 down to 30 nm thickness respectively 21 . This manner is also noticed by Myoung et al 23 .…”

Section: Structural Studymentioning

confidence: 99%

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Optical and Structural Study of ZnO Thin Films Deposited by RF Magnetron Sputtering at Different Thicknesses: a Comparison with Single Crystal

Jazmati

Abdallah

2018

Mat. Res.

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Optical characterizations of preferred orientation (002) ZnO thin films, prepared by RF magnetron sputtering under pure argon plasma, with different thicknesses have been investigated, where grain size and resistivity increase with thickness. Energy band gap and refractive indices have been calculated. A correlation between band gap values and crystalline quality, which is improved with thickness, has been discussed. The calculated refractive indices of the thicker deposited films have increased as the thickness increases. Full width Half Maxima (FWHM) of band gap Photoluminescence (PL) emission decreases with thickness increasement due to quality improvement as it has been monitored by X-Ray Diffraction (XRD). A comparison between PL spectra of 1200 nm film and ZnO single crystal at low temperature is found to be similar.

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“…The thickness varied from 10 nm to 1200 nm. All the deposition conditions are summarized in a previous work 21 .…”

Section: Methodsmentioning

confidence: 99%

“…The stoichiometry (O/Zn about 1) was verified by EDX analysis. residual stress is a compressive stress that decreases with increasing thickness 21 .…”

Section: Methodsmentioning

confidence: 99%

Section: Pl At Room Temperature (Rt)mentioning

confidence: 98%

Section: Structural Studymentioning

confidence: 99%

See 2 more Smart Citations

Optical and Structural Study of ZnO Thin Films Deposited by RF Magnetron Sputtering at Different Thicknesses: a Comparison with Single Crystal

Jazmati

Abdallah

2018

Mat. Res.

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“…ZnO belongs to the transparent conductive oxides group (TCO) and doping ZnO on the other hand, can be achieved by adding a small amount of group III elements (such as B, Al, In or Ga) or IV elements (such as Pb, Se), and various deposition techniques have been performed to prepare doped ZnO thin lms [20,21]. Among the preparation methods, magnetron sputtering has been the most widely utilized since it enables working at low temperatures and provides deposits of improved adhesion and higher density than other methods [22]. Most importantly, ZnO can be band-gap engineered by alloying it with MgO and CdO to increase and decrease its energy band gap respectively [23], so that its optoelectronic properties may be ddled with.…”

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Characterization of (002)-Preferentially Oriented n-ZnO/p-Si Heterostructure

Abdallah

Al-Khawaja

2015

Acta Phys. Pol. A

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In this paper, preferentially oriented (002) ZnO thin lms have been grown on Si (100) and glass substrates using radio frequency magnetron sputtering. The dependence of the quality of the ZnO thin lms at dierent substrate temperatures on the growth is studied. A ZnO thin lm with c-axis-oriented würtzite structure is obtained at a growth temperature from 200 to 400• C. X-ray diraction shows that the full width at half maximum θ2θ of (002) ZnO/Si is located at approximately 34.42• , which is used to infer the grain size that is found to be 17 nm to 19.7 nm. The FWHM is 9.5• to 8• in rocking curve mode, from which the crystalline quality has been determined. The texture degree demonstrates the improvement in quality with the increase of substrate temperature, which is best at 400• C. The band gap extracted by UV transmittance spectrum has been identied as 3.2 eV at 400• C. The electrical characteristics via CV and IV measurements on the basis of the heterojunction thermal emission model conrm the domination of high-density grain boundary layer existing at the interface. The transport currents indicate to the presence of space-charge-limited current and trap-charge-limited current mechanisms.

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Influence of CuS powder concentration on the construction of hybrid PVA/CuS thin films for polymer light-emitting applications

Sabah

Razak

Kabaa

et al. 2020

J Mater Sci: Mater Electron

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Thickness effect on stress, structural, electrical and sensing properties of (0 0 2) preferentially oriented undoped ZnO thin films

Cited by 43 publications

References 26 publications

Optical and Structural Study of ZnO Thin Films Deposited by RF Magnetron Sputtering at Different Thicknesses: a Comparison with Single Crystal

Optical and Structural Study of ZnO Thin Films Deposited by RF Magnetron Sputtering at Different Thicknesses: a Comparison with Single Crystal

Optical and Electrical Characterization of (002)-Preferentially Oriented n-ZnO/p-Si Heterostructure

Influence of CuS powder concentration on the construction of hybrid PVA/CuS thin films for polymer light-emitting applications

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