Thickness Effects on pH Response of HfO2 Sensing Dielectric Improved by Rapid Thermal Annealing

Lai, Chao-Sung; Yang, Chia-Ming; Lu, Tseng−Fu

doi:10.7567/ssdm.2005.d-1-6

Cited by 5 publications

(6 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As compared to our previous study, the drift coefficient of the ALD-HfO 2 -EIS is stable and quite low (< 0.2 mV/h) when the thickness of the ALD-HfO 2 film decreases. However, for the sputtered HfO 2 -EIS, the drift coefficient increases when the thickness of the sputtered HfO 2 film decreases [ 24 ]. It could be that the thin HfO 2 film prepared by ALD was much denser than that deposited by sputtering [ 25 ].…”

Section: Resultsmentioning

confidence: 99%

Immobilization of enzyme and antibody on ALD-HfO2-EIS structure by NH3 plasma treatment

et al. 2012

Self Cite

View full text Add to dashboard Cite

Thin hafnium oxide layers deposited by an atomic layer deposition system were investigated as the sensing membrane of the electrolyte-insulator-semiconductor structure. Moreover, a post-remote NH3 plasma treatment was proposed to replace the complicated silanization procedure for enzyme immobilization. Compared to conventional methods using chemical procedures, remote NH3 plasma treatment reduces the processing steps and time. The results exhibited that urea and antigen can be successfully detected, which indicated that the immobilization process is correct.

show abstract

Section: Resultsmentioning

confidence: 99%

Immobilization of enzyme and antibody on ALD-HfO2-EIS structure by NH3 plasma treatment

et al. 2012

Self Cite

View full text Add to dashboard Cite

show abstract

“…The fabrication of devices with silicon dioxide (SiO2) as dielectric interface is convenient but it is not preferable since SiO2 has low pH buffer capacity in comparison to other dielectric materials, suffers from drift, hysteresis, leakage currents, penetration of ions when in contact with the electrolyte for an extended period of time 24,25 . Other dielectrics such as aluminium oxide (Al2O3) 11,12,26 and hafnium oxide (HfO2) 12,27 can be used to improve the sensor properties, being more resistant to ion penetration and providing a higher dielectric constant that increases the transconductance further by increasing the capacitive effect in the semiconductor even with physically thicker layers. Combining the design of a high aspect ratio Fin-FETs with high-k dielectrics can enhance their specific advantages, improving the superior linear response of the output current and increasing the sensitivity and signal to noise ratio by improving the transconductance responsible of the signal transduction.…”

Section: Introductionmentioning

confidence: 99%

High performance Fin-FET electrochemical sensor with high-k dielectric materials

Rollo

Rani

Olthuis

et al. 2020

Sensors and Actuators B: Chemical

View full text Add to dashboard Cite

In this work we combine a Fin Field Effect Transistor (Fin-FET) characterised by a high height to width aspect ratio with high-k dielectric materials to study the optimized design for chemical-FETs to provide higher transconductance (and thus a better signal to noise ratio), increased dynamic range and chemical stability. We used pH sensing to verify the design. We explored the sensitivity and response linearity of silicon dioxide, alumina and hafnium oxide as dielectric materials sensing pH, and compared their chemical stability in different acids. The high aspect ratio fin geometry of the sensor provides high currents, as well as a planar conduction channel more reliable than traditional silicon nanowires. The hafnium oxide Fin-FET configuration performed the best delivering the most linear response both for the output and transfer characteristics providing a wider dynamic range. Hafnium oxide also showed the best chemical stability. Thus, we believe that the developed high aspect ratio Fin-FETs/high-k dielectric system can offer the best compromise of performance of FET-based sensors.

show abstract

“…The pH-ISFET sensor is directly to be submerged in and loops for 1500 s. Fig. 6 The measured as well as extracted sensing parameters are summarized in Table I, where the data from EIS devices using Si N [12], Ta O [4], WO [12], Al O [4], HfO [14], [26] are shown for comparison. Although a high-k Pr O sensing membrane has a slightly lower sensitivity and higher hysteresis and drift, the nitrogen incorporated into Pr O film can reduce the strain at Pr O /Si interfaces and hence improve the sensing characteristics [27].…”

Section: B Sensing Characterizationmentioning

confidence: 99%

Development of a High-k Pr$_{2}$O$_{3}$ Sensing Membrane for pH-ISFET Application

Pan

Liao

2008

IEEE Sensors J.

View full text Add to dashboard Cite

In order to develop a pH sensor having a good pH-sensing characteristic, electrolyte-insulator-semiconductor capacitors using a high-k Pr 2 O 3 thin film as the sensing membrane were fabricated on silicon substrates by reactive radio frequency sputtering. The structural and morphological features of these films with annealing at various temperatures were studied by X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy. The Pr 2 O 3 sensing film after annealing at 900 C is suggested to the increase in the interfacial SiO 2 and silicate formation, and the high surface roughness. Therefore, a physical vapor deposition Pr 2 O 3 film is adopted as a new pH-sensing layer. The result produces a pH response of 52.9 mV/pH (pH = 2-12), a hysteresis voltage of 17.5 mV (pH = 7 4 7 10 7), and a drift rate of 2.15 mV/h (pH = 7 buffer solution).Index Terms-Annealed at 900 C, drift rate, electrolyte-insulator-semiconductor (EIS), hysteresis, interfacial SiO 2 and Pr silicate formation, pH-ISFET, Pr 2 O 3 , sensing membrane, sensitivity.

show abstract

Thickness Effects on pH Response of HfO2 Sensing Dielectric Improved by Rapid Thermal Annealing

Cited by 5 publications

References 0 publications

Immobilization of enzyme and antibody on ALD-HfO2-EIS structure by NH3 plasma treatment

Immobilization of enzyme and antibody on ALD-HfO2-EIS structure by NH3 plasma treatment

High performance Fin-FET electrochemical sensor with high-k dielectric materials

Development of a High-k Pr$_{2}$O$_{3}$ Sensing Membrane for pH-ISFET Application

Contact Info

Product

Resources

About