Thickness Effects on the Thermal Expansion Coefficient of ITO/PET Film

Lin, J. Y.; Su, Fang-I; Chien, Chi‐Hui; Su, Ting-Hsuan; Lin, Wei‐Ting; Jhuang, Yun-Da; Che, Jia-Wei; Li, Jyun-Jie

doi:10.1007/978-1-4614-4235-6_49

Cited by 2 publications

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“…For the last four samples (12.0–17.4 nm thick), the R value has a declining trend. We attribute this to the fact that thicker MoS 2 samples may have smaller TEC value just like PET (polyethylene terephthalate) film . The TEC mismatch between MoS 2 nanosheets and c-Si substrate therefore decreases.…”

Section: Results and Discussionmentioning

confidence: 95%

“…We attribute this to the fact that thicker MoS 2 samples may have smaller TEC value just like PET (polyethylene terephthalate) film. 63 The TEC mismatch between MoS 2 nanosheets and c-Si substrate therefore decreases. As a result, the local interface spacing increase during experiment will become smaller than the thinner samples, leading to a better interface energy coupling.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Energy Transport State Resolved Raman for Probing Interface Energy Transport and Hot Carrier Diffusion in Few-Layered MoS₂

et al. 2017

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Quantitative understanding of 2D atomic layer interface thermal resistance (R) based on Raman characterization is significantly hindered by unknown sample-to-sample optical properties variation, interface-induced optical interference, off-normal laser irradiation, and large thermal-Raman calibration uncertainties. In this work, we develop a novel energy transport state resolved Raman (ET-Raman) to resolve these critical issues, and also consider the hot carrier diffusion, which is crucial but has been rarely considered during interface energy transport study. In ET-Raman, by constructing two steady heat conduction states with different laser spot sizes, we differentiate the effect of R and hot carrier diffusion coefficient (D). By constructing an extreme state of zero/negligible heat conduction using a picosecond laser, we differentiate the effect of R and material's specific heat. In the end, we precisely determine R and D without need of laser absorption and temperature rise of the 2D atomic layer. Seven MoS 2 samples (6.6−17.4 nm) on c-Si are characterized using ET-Raman. Their D is measured in the order of 1.0 cm 2 /s, increasing against the MoS 2 thickness. This is attributed to the weaker in-plane electron−phonon interaction in thicker samples, enhanced screening of long-range disorder, and improved charge impurities mitigation. R is determined as 1.22−1.87 × 10 −7 K•m 2 /W, decreasing with the MoS 2 thickness. This is explained by the interface spacing variation due to thermal expansion mismatch between MoS 2 and Si, and increased stiffness of thicker MoS 2 . The local interface spacing is uncovered by comparing the theoretical Raman intensity and experimental data, and is correlated with the observed R variation.

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Section: Results and Discussionmentioning

confidence: 95%

Section: ■ Results and Discussionmentioning

confidence: 99%