Thickness-Lamé Thin-Film Piezoelectric-on-Silicon Resonators

Shahraini, Sarah; Mansoorzare, Hakhamanesh; Mahigir, Amirreza; Abdolvand, Reza

doi:10.1109/jmems.2020.2972779

Cited by 16 publications

(11 citation statements)

References 31 publications

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“…Enhancement methods include the use of phononic crystals, dispersion‐engineered resonators, support transducer topologies, micromachined reflectors, [ 19 ] and doping. [ 53 ]…”

Section: Introductionmentioning

confidence: 99%

“…[14,15] When compared to other common microelectromechanical systems (MEMS) transduction methods such as thermal/piezoresistive, [16][17][18] capacitive, [19][20][21][22] and electrostatic [23][24][25] schemes, piezoelectric materials have a higher energy density, better frequency scaling, lower power configurations, and are easier to characterize and content) and it does not require a post-deposition poling step. [47] Furthermore, AlN can be doped with scandium to increase electromechanical coupling while maintaining a high quality (Q) factor [53] or to add ferroelectric behavior. [54] As a piezoelectric, AlN has been successfully implemented in transducers for a wide range of devices including energy harvesters, acoustic devices, sensors, actuators, RF filters and duplexers, [47,55,56] and accelerometers.…”

Section: Introductionmentioning

confidence: 99%

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Influence of a Tailored Oxide Interface on the Quality Factor of Microelectromechanical Resonators

Lynes

Chandrahalim

2023

Adv Materials Inter

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Piezoelectric microelectromechanical systems (MEMS) are used as sensors, actuators, energy harvesters, accelerometers, and communication modules. Aluminum nitride (AlN) is an especially attractive piezoelectric material because its fabrication process allows it to be integrated into semiconductor circuitry to deliver a fully integrated solution. Microelectromechanical resonators with AlN sandwiched between n‐type silicon (Si) and top metal electrode with and without a silicon oxide layer are designed and fabricated. The effect of the oxide film is up to a fourfold increase in quality factor (Q) that is consistent from very high frequency (VHF) to super high frequency (SHF). This effect is demonstrated using thin plate bulk acoustic wave modes from 70–80 MHz using the second contour mode and first width extensional mode and from 9.5–10.5 GHz using high overtone thickness modes. To explore potential applications of AlN‐transduced Q‐enhanced MEMS devices in harsh environments, measurements from −200 °C to +200 °C are performed. The Q enhancement is persistent across a wide temperature range for both VHF and SHF resonators with the added oxide layer. Furthermore, AlN‐on‐Si resonators that have a comparable temperature coefficient of frequency to silicon carbide‐based resonators in commercial applications are demonstrated.

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“…Enhancement methods include the use of phononic crystals, dispersion‐engineered resonators, support transducer topologies, micromachined reflectors, [ 19 ] and doping. [ 53 ]…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of a Tailored Oxide Interface on the Quality Factor of Microelectromechanical Resonators

Lynes

Chandrahalim

2023

Adv Materials Inter

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“…[ 49–54 ] Moreover, AlN does not introduce contamination to the cleanroom environment and can be doped to enhance electromechanical coupling while maintaining a high quality ( Q ) factor. [ 49,55 ] AlN has been successfully utilized as a transducer in numerous applications, including energy harvesters, acoustic devices, sensors, actuators, RF filters, and accelerometers. [ 11,49,56,57 ]…”

Section: Introductionmentioning

confidence: 99%

“…[49][50][51][52][53][54] Moreover, AlN does not introduce contamination to the cleanroom environment and can be doped to enhance electromechanical coupling while maintaining a high quality (Q ) factor. [49,55] AlN has been successfully utilized as a transducer in numerous applications, including energy harvesters, acoustic devices, sensors, actuators, RF filters, and accelerometers. [11,49,56,57] The broad utility and practicality of AlN-based piezo-MEMS resonators make them well-suited for use in devices that may encounter harsh radiation environments.…”

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confidence: 99%

Effects of Gamma Ray Radiation on the Performance of Microelectromechanical Resonators

et al. 2023

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While much radiation test data are available for metal‐oxide‐semiconductor (MOS) devices, research into the effects of radiation on microelectromechanical systems (MEMS) is in its relative infancy. Piezoelectrically transduced MEMS resonators have broad applications in signal processing, environmental monitoring, and navigation. Aluminum nitride (AlN), in particular, is an attractive piezoelectric because of its favorable fabrication characteristics and ease of integration into the complementary MOS (CMOS) manufacturing process. The utility of these devices in space and nuclear systems necessitates research into their performance in radiation environments. Resiliency and an established relationship between radiation dose and device behavior provide a critical tool for engineers in their design process. Multiple AlN‐based MEMS resonator designs are created and exposed the devices to 1 Mrad(Si) gamma irradiation from a Cobalt‐60 source while measuring scattering (S‐) parameters in situ. The experimental data are matched to a theoretical model to describe the change in frequency as a function of radiation‐induced displacement damage. It is demonstrated that the AlN‐based resonators are resilient against radiation‐induced charge‐trapping effects. Furthermore, a new method is presented of permanent frequency trimming MEMS resonators up to 30% of their bandwidth without modifying quality factor or motional resistance.

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“…Applying this technology, a thickness-lamé mode resonator was designed. However, the reported temperature range was −20 to 180 °C, and the TCF varied with temperature [ 34 ]. The mode shapes of heavily doped silicon resonator also affected the TCF.…”

Section: Introductionmentioning

confidence: 99%

Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate

Fei

Ren

2021

Micromachines

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As a result of their IC compatibility, high acoustic velocity, and high thermal conductivity, aluminum nitride (AlN) resonators have been studied extensively over the past two decades, and widely implemented for radio frequency (RF) and sensing applications. However, the temperature coefficient of frequency (TCF) of AlN is −25 ppm/°C, which is high and limits its RF and sensing application. In contrast, the TCF of heavily doped silicon is significantly lower than the TCF of AlN. As a result, this study uses an AlN contour mode ring type resonator with heavily doped silicon as its bottom electrode in order to reduce the TCF of an AlN resonator. A simple microfabrication process based on Silicon-on-Insulator (SOI) is presented. A thickness ratio of 20:1 was chosen for the silicon bottom electrode to the AlN layer in order to make the TCF of the resonator mainly dependent upon heavily doped silicon. A cryogenic cooling test down to 77 K and heating test up to 400 K showed that the resonant frequency of the AlN resonator changed linearly with temperature change; the TCF was shown to be −9.1 ppm/°C. The temperature hysteresis characteristic of the resonator was also measured, and the AlN resonator showed excellent temperature stability. The quality factor versus temperature characteristic was also studied between 77 K and 400 K. It was found that lower temperature resulted in a higher quality factor, and the quality factor increased by 56.43%, from 1291.4 at 300 K to 2020.2 at 77 K.

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Thickness-Lamé Thin-Film Piezoelectric-on-Silicon Resonators

Cited by 16 publications

References 31 publications

Influence of a Tailored Oxide Interface on the Quality Factor of Microelectromechanical Resonators

Influence of a Tailored Oxide Interface on the Quality Factor of Microelectromechanical Resonators

Effects of Gamma Ray Radiation on the Performance of Microelectromechanical Resonators

Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate

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