Thieno[3,4-b]pyrazine-containing D-A conjugated polymer-based photodetectors with high performance and UV–visible dual-band response for color temperature sensor and encrypted optical communication

Hou, Huiqing; Yang, Nan; Wu, Xiaoming; Lu, Yan; Lan, Baofa; Yin, Shougen

doi:10.1016/j.dyepig.2022.110731

Cited by 7 publications

(3 citation statements)

References 37 publications

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Section: Resultsmentioning

confidence: 99%

“…The resulted photocurrents are shown in Figure 5b with significant distinction of the four states and the photodetector can achieve stable photodetection from 10 Hz to 1 kHz under switching light illumination of 365 and 265 nm (Figure S19, Supporting Information), suggesting that the precise recognition of the mixed two-wavelength lights by only using one photodetector can be applied in encrypted dualchannel optical communications. [47][48][49][50] Vividly, the image displaying the characters of "USTC" was selected to be an input image as a proof-of-concept demonstration (Figure 5c). First, the input image was segmented and converted into 256 pixels which were encoded into a 16 × 16 digital matrix based on the rule: if a pixel is filled more than half by the pattern, the pixel is encoded as "1;" otherwise, the code is "0".…”

Section: Demonstration Of Dual-channel Optical Communicationmentioning

confidence: 99%

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Light‐Induced Bipolar Photoresponse with Amplified Photocurrents in an Electrolyte‐Assisted Bipolar p–n Junction

Fang

Wang

et al. 2023

Advanced Materials

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The p–n junction with bipolar characteristics sets the fundamental unit to build electronics while its unique rectification behavior constrains the degree of carrier tunability for expanded functionalities. Herein, a bipolar‐junction photoelectrode employed with a gallium nitride (GaN) p–n homojunction nanowire array that operates in electrolyte is reported, demonstrating bipolar photoresponse controlled by different wavelengths of light. Significantly, with rational decoration of a ruthenium oxides (RuOx) layer on nanowires guided by theoretical modeling, the resulting RuOx/p–n GaN photoelectrode exhibits unambiguously boosted bipolar photoresponse by an enhancement of 775% and 3000% for positive and negative photocurrents, respectively, compared to the pristine nanowires. The loading of the RuOx layer on nanowire surface optimizes surface band bending, which facilitates charge transfer across the GaN/electrolyte interface, meanwhile promoting the efficiency of redox reaction for both hydrogen evolution reaction and oxygen evolution reaction which corresponds to the negative and positive photocurrents, respectively. Finally, a dual‐channel optical communication system incorporated with such photoelectrode is constructed with using only one photoelectrode to decode dual‐band signals with encrypted property. The proposed bipolar device architecture presents a viable route to manipulate the carrier dynamics for the development of a plethora of multifunctional optoelectronic devices for future sensing, communication, and imaging systems.

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Section: Resultsmentioning

confidence: 99%

Section: Demonstration Of Dual-channel Optical Communicationmentioning

confidence: 99%

Light‐Induced Bipolar Photoresponse with Amplified Photocurrents in an Electrolyte‐Assisted Bipolar p–n Junction

Fang

Wang

et al. 2023

Advanced Materials

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“…Additionally, the two channels of the UV/VIS bi-spectral image system are supposed to obtain UV and VIS images simultaneously [8,9,12], so that the fused image can provide accurate location information. However, most reported UV/VIS bi-spectral PDs only have one single channel towards a broadband spectrum of both UV and VIS light [27][28][29][30][31]. In single channel, broadband spectrum PDs have an extreme difficulty distinguishing whether the response is caused by UV or VIS light.…”

Section: Introductionmentioning

confidence: 99%

Fused solar-blind UV/VIS Bi-spectral sensing and imaging with vertically stacking ZnGa₂O₄/MAPbI₃ structure

Zou

Liu

et al. 2023

Nanotechnology

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Various spectral bands provide different types of information, and information enhancement could be achieved by selective fusion of different spectral bands. The fused solar-blind Ultraviolet (UV)/Visible (VIS) bi-spectral sensing and imaging can provide the precise location of UV targets in virtue of VIS background, which has been increasingly promoted. However, most reported UV/VIS bi-spectral photodetectors (PDs) only have one single channel towards a broadband spectrum of both UV and VIS light, which cannot distinguish two kinds of signals, hindering the image fusion of bi-spectral signals. This work demonstrates the solar-blind UV/VIS bi-spectral PD based on vertically stacking perovskite of MAPbI3 and ternary oxide of ZnGa2O4 with independent and distinct response toward solar-blind UV and VIS light in a single pixel. The PD exhibits excellent sensing properties with an Ion/Ioff ratio of >10^7 and 10^2, detectivity of >10^10 and 10^8 Jones, and response decay time of 90 μs and 16 ms for VIS and UV channels, respectively. The successful fusion of VIS and UV images suggests that our bi-spectral PD can be applied in the accurate identification of corona discharge and fire detection.

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Mosaic Se/InSe Heterojunction for Self‐Powered Bipolar Photodetection

Wang,

Zhang,

Liu

et al. 2023

Advanced Optical Materials

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Broadband, sensitive, and spectrally distinctive photodetectors show great applications in multifunction optoelectronic devices, which usually integrate multiple photodetectors for distinguishing different spectra. Recently, UV‐induced photocurrent polarity‐switching in individual photoelectrochemical photodetectors (PEC PDs) has been demonstrated by tuning the interfacial physical/chemical processes. However, broadband and spectrally distinctive PEC PDs are still scarce. Here, mosaic t‐Se/InSe heterojunctions are used for designing broadband and spectrally distinctive PEC PDs. Mosaic t‐Se/InSe photoelectrodes are fabricated by one‐step electrochemical deposition with annealing treatment. t‐Se/InSe self‐powered PEC PDs show a broadband photoresponse from UV to near‐infrared (NIR). The photocurrent is negative for UV‐visible spectra and turns positive under NIR irradiation. The light‐induced photocurrent polarity‐switching originates from the competition of different redox reactions at the t‐Se/InSe photoelectrode/electrolyte interface. The responsivity is −22.5, −10.93, −4.18, and 2.48 mA W−1 for 365, 525, 630, and 850 nm light, respectively, exceeding most spectrally distinctive solid‐state PDs. The boosted photoresponse of t‐Se/InSe is attributed to the synergistic effect of stronger light absorption, faster carrier transport, and accelerated interfacial charge transfer. Moreover, the devices show great potential for applications in encrypted optical communications. This work provides a way for designing broadband and spectrally distinctive PEC PDs and demonstrates their potential applications.

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Thieno[3,4-b]pyrazine-containing D-A conjugated polymer-based photodetectors with high performance and UV–visible dual-band response for color temperature sensor and encrypted optical communication

Cited by 7 publications

References 37 publications

Light‐Induced Bipolar Photoresponse with Amplified Photocurrents in an Electrolyte‐Assisted Bipolar p–n Junction

Light‐Induced Bipolar Photoresponse with Amplified Photocurrents in an Electrolyte‐Assisted Bipolar p–n Junction

Fused solar-blind UV/VIS Bi-spectral sensing and imaging with vertically stacking ZnGa₂O₄/MAPbI₃ structure

Mosaic Se/InSe Heterojunction for Self‐Powered Bipolar Photodetection

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Thieno[3,4-b]pyrazine-containing D-A conjugated polymer-based photodetectors with high performance and UV–visible dual-band response for color temperature sensor and encrypted optical communication

Cited by 7 publications

References 37 publications

Light‐Induced Bipolar Photoresponse with Amplified Photocurrents in an Electrolyte‐Assisted Bipolar p–n Junction

Light‐Induced Bipolar Photoresponse with Amplified Photocurrents in an Electrolyte‐Assisted Bipolar p–n Junction

Fused solar-blind UV/VIS Bi-spectral sensing and imaging with vertically stacking ZnGa2O4/MAPbI3 structure

Mosaic Se/InSe Heterojunction for Self‐Powered Bipolar Photodetection

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Product

Resources

About

Fused solar-blind UV/VIS Bi-spectral sensing and imaging with vertically stacking ZnGa₂O₄/MAPbI₃ structure