Thin 3D Multiplication Regions in Plasmonically Enhanced Nanopillar Avalanche Detectors

Abstract

We demonstrate a nanopillar (NP) device structure for implementing plasmonically enhanced avalanche photodetector arrays with thin avalanche volumes (∼ 310 nm × 150 nm × 150 nm). A localized 3D electric field due to a core-shell PN junction in a NP acts as a multiplication region, while efficient light absorption takes place via surface plasmon polariton Bloch wave (SPP-BW) modes due to a self-aligned metal nanohole lattice. Avalanche gains of ∼216 at 730 nm at -12 V are obtained. We show through capacitance-voltage characterization, temperature-dependent breakdown measurements, and detailed device modeling that the avalanche region is on the order of the ionization path length, such that dead-space effects become significant. This work presents a clear path toward engineering dead space effects in thin 3D-confined multiplication regions for high performance avalanche detectors for applications in telecommunications, sensing and single photon detection.

Low-Noise 3-D Avalanche Photodiodes

“…The last step is solving a series of recurrence equations until convergence is reached. To prove the validity of our algorithm, we compare our simulation results with the experimental data of the example of 3D shaped APD from Pradeep Senanayake et al in 2012 [9]. The cubic in Fig.…”

“…Finally, we can calculate the overall mean gain by averaging the amount of carriers at the first and the second moment over all possible routes. In 2012, P Senanayake et al first proposed a 3D-shaped APD [9]. In their experimental work, hexagonal core-shell nano-pillar structures with GaAs homojunctions are utilized as optical antennas to enhance the photon absorption efficiency.…”

Emerging technologies for high performance infrared detectors

“…NW avalanche photodiodes (APDs) with diverse configurations have been demonstrated. These include the "crossed" n-CdS/p-Si NW heterojunction [116], axial p-i-n single Si NW homojunction [116], InAsP QD in the axial InP p-n junction [117], radial GaAs nanoneedle junction [107], and radial GaAs p-n junction [118]. GaAsbased APD GaAs nanoneedles exhibit an excellent multiplication factor as large as 29 at −2 V and 263 at −8 V [118].…”

Nanopillar optical antenna nBn detectors for subwavelength infrared pixels

“…The key feature of the NOAD is to maintain high quantum efficiency (50%-70%) 8,9 while significantly reducing the electrical diffusion volume such that the signal to noise ratio (detectivity) is improved. The detectivity of a photodetector can be defined as follows:…”

“…The requisite large thickness of absorbing material to maximize quantum efficiency results in a deleterious effect for the dark current density. The detectivity of the photodetector which needs to be improved to achieve higher operating temperatures 9 . The detectivity is defined in Equation 1 as 7 Gt can be reduced.…”