“…The solution for producing ultra-thin (10pm) Si detectors in large quantity was an anisotropic, temperature controlled, TMAH (tetramethylammonium hydroxide) etching of high resistivity, P-doped, 280pm Si wafers [6]. Because of uncertainty about the thickness homogeneity and the leakage current for such thin, high capacity detectors, 14pm and 12pm detectorswere first tried out.…”