2010
DOI: 10.1149/1.3483163
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Thin Film Ag Masking for Deep Glass Micromachining

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Cited by 4 publications
(2 citation statements)
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“…If the masking layer presents a hydrophilic surface, the etching solution will easily penetrate through this crack and generate a pinhole. Many masking materials for wet etching of glass have been reported in the literature, including photoresist, 52 amorphous Si deposited at low (200 C) 53 or high temperatures (570 C), 54 LPCVD polysilicon, 55,56 Cr/Au, 57 Cr/photoresist, 58 bulk Si, 59 amorphous SiC/ PECVD, 60 Ag, 61 Mo, 62 and Ti. 63 A detailed analysis of masking materials used in wet etching of glass is presented in Ref.…”
Section: Wet Etchingmentioning
confidence: 99%
“…If the masking layer presents a hydrophilic surface, the etching solution will easily penetrate through this crack and generate a pinhole. Many masking materials for wet etching of glass have been reported in the literature, including photoresist, 52 amorphous Si deposited at low (200 C) 53 or high temperatures (570 C), 54 LPCVD polysilicon, 55,56 Cr/Au, 57 Cr/photoresist, 58 bulk Si, 59 amorphous SiC/ PECVD, 60 Ag, 61 Mo, 62 and Ti. 63 A detailed analysis of masking materials used in wet etching of glass is presented in Ref.…”
Section: Wet Etchingmentioning
confidence: 99%
“…7,8 Similarly, silicon micro-and nano-structures can be formed by chemical etching in alkaline solutions such as potassium hydroxide (KOH) or tetramethyl ammonium hydroxide (TMAH). 9,10 However, producing nano-meter structures with vertical sidewalls utilizing wet chemical etching techniques can be challenging.…”
mentioning
confidence: 99%