Thin-film devices fabricated with benzocyclobutene adhesive wafer bonding

Christiaens, Ilse; Roelkens, G.; Mesel, Kurt De; Thourhout, Dries Van; Baets, Roel

doi:10.1109/jlt.2004.841783

Cited by 54 publications

(23 citation statements)

References 19 publications

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“…The coefficient of natural convection is h ¼ 25 W∕m 2 ∕°C (23). Other conditions in experiments include the surrounding temperature T ∞ ¼ 50°C, thickness and thermal conductivity H b ¼ 1 μm, k b ¼ 0.3 W∕m∕°C for BCB (24); H g ¼ 800 μm, k g ¼ 1.1 W∕m∕°C for glass (25); and H L ¼ 5 μm for μ-ILED. The thermal conductivity for Al interconnects is thickness dependent (26)(27)(28)(29), and is taken as 70 W∕m∕°C and 160 W∕m∕°C for 300 nm-thick and 1,000 nm-thick interconnects, respectively.…”

Section: Discussionmentioning

confidence: 99%

Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting

Kim

Brueckner

Song

et al. 2011

Proc. Natl. Acad. Sci. U.S.A.

232

187

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Properties that can now be achieved with advanced, blue indium gallium nitride light emitting diodes (LEDs) lead to their potential as replacements for existing infrastructure in general illumination, with important implications for efficient use of energy. Further advances in this technology will benefit from reexamination of the modes for incorporating this materials technology into lighting modules that manage light conversion, extraction, and distribution, in ways that minimize adverse thermal effects associated with operation, with packages that exploit the unique aspects of these light sources. We present here ideas in anisotropic etching, microscale device assembly/integration, and module configuration that address these challenges in unconventional ways. Various device demonstrations provide examples of the capabilities, including thin, flexible lighting "tapes" based on patterned phosphors and large collections of small light emitters on plastic substrates. Quantitative modeling and experimental evaluation of heat flow in such structures illustrates one particular, important aspect of their operation: small, distributed LEDs can be passively cooled simply by direct thermal transport through thin-film metallization used for electrical interconnect, providing an enhanced and scalable means to integrate these devices in modules for white light generation.gallium nitride | solid-state lighting | transfer printing I ndium gallium nitride-based (InGaN) blue light emitting diodes (LEDs) hold a dominant position in the rapidly growing solid-state lighting industry (1, 2). The materials and designs for the active components of these devices are increasingly well developed due to widespread research focus on these aspects over the last one and a half decades. Internal and external quantum efficiencies of greater than 70% (3) and 60% (3), respectively, with luminous efficacies larger than 200 lm∕W (4) and lifetimes of >50;000 h (5) are now possible. The efficacies (i.e., 249 lm∕W), exceed those of triphosphor fluorescent lamps (i.e., 90lm∕W), thereby making this technology an appealing choice for energy-efficient lighting systems (4). In particular, electricity consumption for lighting potentially could be cut in half using solid-state lighting (2). Although there remain opportunities for further improvements in these parameters, the emergence of LEDs into a ubiquitous technology for general illumination will rely critically on cost effective techniques for integrating the active materials into device packages, interconnecting them into modules, managing the accumulation of heat during their operation, and spatially homogenizing their light output at desired levels of chromaticity. Existing commercial methods use sophisticated, high-speed tools, but which are based on conceptually old procedures that exploit robotic systems to assemble material mechanically diced from a source wafer, with collections of bulk wires, lenses, and heat sinks in millimeter-scale packages, on a device-by-device basis, followed by separa...

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Section: Discussionmentioning

confidence: 99%

Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting

Kim

Brueckner

Song

et al. 2011

Proc. Natl. Acad. Sci. U.S.A.

232

187

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“…With higher reverse bias voltages, the dark current increases gradually but is still less than 150pA even at a reverse bias of 10V. This is several orders of magnitude lower than either Ge photodetectors reported in literature [10,[16][17][18][19][20][21] or the AlGaInAs quantum-well photodetector [26] on silicon demonstrated previously. We attribute this low dark current level to the mild and noninvasive wet etching of the i-InGaAs layer and the timely passivation of the etched sidewalls.…”

Section: Measurement Resultsmentioning

confidence: 60%

“…Various active components, such as lasers [7] and photodetectors [11], have been demonstrated based on this platform. The BCB bonding has also been proved good reliability in both photonic [16] and MEMs applications [17].…”

Section: Introductionmentioning

confidence: 99%

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InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides

et al. 2010

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InGaAs PIN photodetectors heterogeneously integrated on silicon-on-insulator waveguides are fabricated and characterized. Efficient evanescent coupling between silicon-on-insulator waveguides and InGaAs photodetectors is achieved. The fabricated photodetectors can work well without external bias and have a very low dark current of 10pA. The measured responsivity of a 40µm-long photodetector is 1.1A/W (excluding the coupling loss between the fiber and the SOI waveguide) at a wavelength of 1550nm and shows good linearity for an input power range of 40dB. Due to the large absorption coefficient of InGaAs and the efficient evanescent coupling, the fabricated photodetectors can cover the whole S, C and L communication bands. ©2010 Optical Society of America References and links1. R. Soref, and J. Lorenzo, "All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µm," IEEE J. Quantum Electron. 22(6), 873-879 (1986). 2. R. Soref, and B. Bennett, "Electrooptical effects in silicon," IEEE J. Quantum Electron. 23(1), 123-129 (1987).

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“…In applications where temperature-sensitive materials are required (e.g. in some RF-MEMS applications where material parameters are irreversibly modified by heating) it is desirable to reduce the process temperature still further (in previously reported work with BCB the complete package is heated on a hot plate or in an oven to effect curing [5][6]). In order to effect a sufficient degree of cure of BCB (~90%) using a hotplate, a temperature of 575 K is required for 10 s or 560 K for 20 s (Figure 1) [7].…”

Section: Introductionmentioning

confidence: 99%

Localised laser joining of glass to silicon with BCB intermediate layer

Lorenz

Hand

2009

Microsyst Technol

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The use of a laser to provide localised heating is an ideal solution to the problem of packaging micro-electro-mechanical-systems (MEMS) whilst maintaining a low device temperature to avoid changes in temperature-sensitive materials in the device. In this paper we present localised laser bonding of glass to silicon (normally used as the MEMS substrate) by using a fibre-delivered high power laser diode array to cure an intermediate layer of the thermosetting polymer Benzocyclobutene (BCB). In our experiments, we use two techniques to realise localised heating: one is to use an axicon together with a conventional positive lens to generate a ring focus; the other is to use a scanning focused laser beam. In both cases localised cooling is required to confine the elevated temperatures to the bonding area. Finite Element (FE) simulation indicates that both techniques should keep the temperature in the centre of the package to approximately that of the ambient environment (300 K) during the process. However experiments show that the temperature in the centre of the package rises to a value of around 500K, likely due to poor contact between silicon and cooling sink. Experimentally, we confirmed that either technique can be used to obtain excellent bonding of glass to silicon with leak rate at a level of 10 -10 mbar l s -1 , whilst keeping the centre of device at a lower temperature.

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Thin-film devices fabricated with benzocyclobutene adhesive wafer bonding

Cited by 54 publications

References 19 publications

Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting

Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting

InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides

Localised laser joining of glass to silicon with BCB intermediate layer

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