1991
DOI: 10.1142/s0217984991001696
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Thin Film Electron Interferometry

Abstract: Electron transport through thin overlayers of tin grown on a silicon substrate, and stacking-fault contrast in topographic and conductivity images of Si (111) – 7 × 7 are investigated. Resonances that depend on structural integrity of the overlayer are observed in the conductivity images, and are interpreted as consequences of electron standing-wave formation within the overlayer. The experimental spectra are analyzed using a one-dimensional model which has scattering potentials located at the sample surface a… Show more

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Cited by 7 publications
(11 citation statements)
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“…This is stated e.g. in [18,51] and verified in [9] and below in Section 4 (it is also implicit in [8,10]). This means that (2.33) is automatically true and hence there are no a priori restrictions on ψ i , p imposed by the fit above, beyond the condition detψ = 1/2p.…”
Section: Relations Between Quantitiesmentioning
confidence: 65%
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“…This is stated e.g. in [18,51] and verified in [9] and below in Section 4 (it is also implicit in [8,10]). This means that (2.33) is automatically true and hence there are no a priori restrictions on ψ i , p imposed by the fit above, beyond the condition detψ = 1/2p.…”
Section: Relations Between Quantitiesmentioning
confidence: 65%
“…and as in (2.36) for h √ g = 1 we have T zz = D zf . Such formulas also arise in [18,19,20,42,43,44,45,51] (cf. [9]) and we will look at this below.…”
Section: Comments On Geometry and Gravitymentioning
confidence: 90%
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