2001
DOI: 10.1134/1.1359817
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Thin-film magnetically soft Fe-Zr-N alloys with high saturation induction

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Cited by 4 publications
(5 citation statements)
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“…For the study, films of six series I, II, III, IV, V, and VI were prepared ( Table 1 ). The calculated composition was supposed to produce films containing about 10 mol.% ZrN (films III), which are characterized, according to our earlier data [ 24 , 33 ], by the high saturation induction Bs and low coercive field Hc ; films II, IV, V with a lower Zr content, as compared to that in films III, and the ratio at.% N/at.% Zr = 1–2 were taken to obtain a higher saturation induction Bs as compared to that of films III; Fe films (I) and films with a high Zr content (VI) were taken to obtain diffraction patterns from the material in crystalline and amorphous state, respectively.…”
Section: Methodsmentioning
confidence: 99%
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“…For the study, films of six series I, II, III, IV, V, and VI were prepared ( Table 1 ). The calculated composition was supposed to produce films containing about 10 mol.% ZrN (films III), which are characterized, according to our earlier data [ 24 , 33 ], by the high saturation induction Bs and low coercive field Hc ; films II, IV, V with a lower Zr content, as compared to that in films III, and the ratio at.% N/at.% Zr = 1–2 were taken to obtain a higher saturation induction Bs as compared to that of films III; Fe films (I) and films with a high Zr content (VI) were taken to obtain diffraction patterns from the material in crystalline and amorphous state, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…For the study, films of six series I, II, III, IV, V, and VI were prepared (Table 1). The calculated composition was supposed to produce films containing about 10 mol.% ZrN (films III), which are characterized, according to our earlier data [24,33], by the high saturation induction Bs and low coercive field Hc; films II, IV, V with a lower Zr content, as compared to that in films III, and the ratio at.% N/at.% Zr = 1-2 were taken to obtain a higher saturation induction Bs as compared to that of films III; Fe films (I) and films with a high Zr content (VI) were taken to obtain diffraction patterns from the material in crystalline and amorphous state, respectively. The films were deposited onto glass and metallic (Ni-Cr alloy) substrates by dc reactive magnetron sputtering of a heated Fe 1-x Zr x composite target in Ar, Ar + 5% N 2 and Ar + 15% N 2 atmospheres (Table 1) and subsequent vacuum annealing (at the residual pressure p = 2.4-4.2•10 −4 Pa) at 300, 400, 500, and 600 • C, exposure 1 h. The films as-sputtered and annealed at 400, 500, and 600 • C (excluding films IV that were annealed at 400 and 500 • C) were studied.…”
Section: Methodsmentioning
confidence: 99%
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“…Such films are promising candidates for practical applications in devices of modern microelectronics as a high-frequency (f > 100 MHz) field-amplifying components, in particular, as an ideal recording head pole materials as well as shields for magneto-resistive sensors. The most of these investigations was centred on the iron-rich FeXN alloys, where X represents any of a variety of elements including Al, Si, Ta, Hf and Zr [1][2][3][4][5][6]. The indicated elements are usually added to improve the thermal stability of binary FeN alloys, but they also affect their magnetic properties.…”
Section: Introductionmentioning
confidence: 99%
“…located at the grainboundaries of the α-Fe-based phase [3]. The Fe-Zr-N films (classified among the aforementioned films) produced by magnetron sputtering were studied in [3][4][5][6]. Nanocrystallization process is realized in the films during the annealing at 400 -600 0 C for 1 h., which results in both the increase in saturation magnetization up to 1.8 T and decrease in the coercive force up to 0.3-0.4 Oe as compared to those of as-sputtered films.…”
Section: Introductionmentioning
confidence: 99%