Thin-film perovskites—Ferroelectric materials for integrated optics

Abstract

Optical guided wave (OGW) devices. based on LiNb03 or GaAs, are commercially available products with established markets and applications. While LiNbO3 presently dominates the commercial applications, there are several drivers for the development of improved electro-optic (EO) materials. If the appropriate ccstal quality could be obtained for thin-film BaTiO3 supported on MgO for example, or for an integrated BaTi03MgO structure on silicon or GaAs, then the optimum OGW device structure might be realized. We will report on our results for the growth of optical qual@-, epitaxial BaTi03 and SrTiO3 on single-crystal MgO substrates using source shuttering molecular beam epitaxy W E ) techniques. We will also discuss how these materials can be integrated onto silicon. Our MBE studies show that, for this important class of perovskite oxides, heteroepitaxy between the perovskites and alkaline earth oxides is dominated by interfacial electrostatics at the first atomic layers. We have been able to demonstrate that a layer-by-layer energy minimization associated with interfacial electrostatics leads to the growth of high quality thin films of these materials. We have fabricated waveguides from these materials, and the optical clarity and loss coefficients have been characterized and found to be comparable to in-diffused waveguide structures typically represented by Ti drifted LiNbO3.

Ferroelectric relaxor behavior in Ba0.925Dy0.075TiO3 ceramic

“…Perovskite-based ferroelectrics materials attract considerable interest owing to rich diversity of their physical properties and possible applications in various technologies like memory storage devices [1], micro-electromechanical systems [2], multilayer ceramic capacitors [3], and recently in the area of opto-electronic devices [4]. These useful properties have most often been observed in lead based perovskite compounds, such as PMN, PST, PLZT [5][6][7].…”

Spectroscopic investigations of nanostructured LiNbO3 doped with Eu3+

“…Recently, a new great interest in nanostructured LiNbO 3 can be observed [6][7][8][9]11,19]. It is proposed as an excellent material for further miniaturization optoelectronic integrated devices [10]. Some works on the preparation and optical properties of LiNbO 3 nanocrystals doped with Er 3+ , Nd 3+ and Pr 3+ have been published [6,11,19].…”

Phase transition and dielectric study in Ba0·95Dy0·05TiO3 ceramic

“…Perovskite-based ferroelectric materials attract considerable interest owing to the rich diversity of their physical properties and possible applications in various technologies like memory storage devices (Kingon et al 1996), micro-electromechanical systems (Polla and Francis 1996), multilayer ceramic capacitors (Sakabe et al 1986), and recently in the area of opto-electronic devices (Walker and Mckee 1996). These useful properties have most often been observed in lead based perovskite compounds, such as PMN, PST, PLZT (Setter and Cross 1980;Cross 1987;Lu and Calvarin 1995).…”