2012
DOI: 10.1109/jmems.2011.2181156
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Thin-Film Piezoelectric Materials For a Better Energy Harvesting MEMS

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Cited by 77 publications
(41 citation statements)
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“…These highperformance ferroelectric properties will be useful for the fabrication of improved piezoelectric thin film devices and/or MEMS including wide-band FBAR filters for mobile communications and compact energy harvesting piezoelectric devices. 35,36 As for wide-band GHz filters, 10%PMnN-PZT(55/ 45) thin films can be used to fabricate 3-GHz filter with 1-GHz bandwidth, based on the high coupling, k t $ 0.62. 24,37 IV.…”
Section: B Possible Applications Of Pzt-based Thin Filmsmentioning
confidence: 99%
“…These highperformance ferroelectric properties will be useful for the fabrication of improved piezoelectric thin film devices and/or MEMS including wide-band FBAR filters for mobile communications and compact energy harvesting piezoelectric devices. 35,36 As for wide-band GHz filters, 10%PMnN-PZT(55/ 45) thin films can be used to fabricate 3-GHz filter with 1-GHz bandwidth, based on the high coupling, k t $ 0.62. 24,37 IV.…”
Section: B Possible Applications Of Pzt-based Thin Filmsmentioning
confidence: 99%
“…However, their also high dielectric constant counterbalances these advantages in terms of the power output. 7 Accordingly, materials with power outputs similar to that of PZT recently received more scientific and technological interest. Aluminum nitride (AlN) based thin films offer promising alternatives due to AlN's comparable power output coupled with an extremely high Q value.…”
Section: Introductionmentioning
confidence: 99%
“…Similar works on the modeling, design, fabrication, and simulations of shaped cantilevered structure MEMSbased piezoelectric power harvesters were conducted by other authors (Marzencki et al 2005(Marzencki et al , 2008Shen et al 2008;Renaud et al 2008;Fang et al 2006;Liu et al 2008;Jeon et al 2005;Lee et al 2007Lee et al , 2009Muralt et al 2009;Elfrink et al 2009;Littrell & Grosh 2012;Lallart et al 2012;Park et al 2010;Liu et al 2011;Wasa et al 2012;Tabesh & Frechette, 2010).…”
Section: Introductionmentioning
confidence: 57%