Thin film poly-crystalline silicon fabrication based on Rapid Thermal Annealing (RTA) process

Abstract

Rapid Thermal Annealing (RTA) process was introduced to the experiment of Aluminum-induced crystallization of a-Si, based on sputtering method, on low cost glass substrate. A stack of glass/Al (150 nm)/Si (220 nm) was deposited by sputtering sequentially. Samples were annealed under RTA process, then annealed in the tube annealing furnace at 400 ℃ for 5 h. The grain crystallization was inspected by optical microscopy (OM), ,Raman spectroscopy, X-ray diffraction (XRD)，and energy dispersive spectroscopy (EDS). The preferential orientation (111) was observed, with a Raman Peak at 520.8cm -1, Different annealing periods were discussed.