Thin film preparation and characterization of wide band gap Cu3TaQ4 (Q = S or Se) p-type semiconductors

Newhouse, Paul F.; Hersh, Peter; Zakutayev, Andriy; Richard, Annette Pauline; Platt, Heather A. S.; Keszler, Douglas A.; Tate, Janet

doi:10.1016/j.tsf.2008.11.020

Cited by 41 publications

(41 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The vacant center of the cubic unit cell creates a "channel" along the (100) crystallographic plane, opening a pathway for ionic conductivity. 290 Considering the scope of this review, we focus on the wide-gap sulvanites Cu 3 TaS 13 Synthesized pellets confirm p-type conductivity according to Seebeck measurements, but has only been reported at ~3x10 -3 S cm -1 . 291 Cu 3 NbS 4 has a computed indirect gap of 1.82 eV and direct gap of 2.3 eV, with a reported experimental optical gap of ~2.6 eV.…”

Section: Cu 3 Mch 4 Sulvanite and Sulvanite-like Materialsmentioning

confidence: 99%

“…ZnS, 8 CdS, 9 Zn x Cd 1-x S 10 ), as well as other binary M x -VI y semiconductors (e.g. SnS 2 , In 2 S 3 ); (2) Ternary chalcopyrite I-III-VI 2 semiconductors (mostly copper-based), represented by CuAlS 2 , 11 a-BaCu 2 S 2 , 12 and Cu 3 TaS 4 ; 13 (3) Multinary layered mixed-anion compounds, such as LaCuOCh, 14 BaCuSF, and CuSCN 15 (3) 2D chalcogenides, such as MoS 2 , including both binary and ternary materials. In addition, there has also been significant research on wide band gap semiconductors (i.e.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

View full text Add to dashboard Cite

Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO) used in displays, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. g-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for ptype doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E G > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and light emitting diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

show abstract

Section: Cu 3 Mch 4 Sulvanite and Sulvanite-like Materialsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

View full text Add to dashboard Cite

show abstract

“…More recently, the calculated electronic structure of the sulvanite compounds Cu 3 TMS 4 (TM = V, Nb, Ta), indicated that they are semiconductors with indirect band gap and the analysis of the electron localization function (ELF) reveals the ionic character of these semiconductors materials [6]. Another work shows that the Cu 3 TaS 4 -Cu 3 TaSe 4 system exhibits excellent optoelectronic properties as p-type conductivity, large optical band gap energy, and tunable visible photoemission [7]. The optical band gap energy of the sulfide (E g = 2.70 eV) make Cu 3 TaS 4 transparent to most visible light, and thin films of this material could be used in transparent electronics as p-type layers in active devices including p-n junctions, transistor channel layers, and photovoltaics [7].…”

Section: Introductionmentioning

confidence: 99%

“…Another work shows that the Cu 3 TaS 4 -Cu 3 TaSe 4 system exhibits excellent optoelectronic properties as p-type conductivity, large optical band gap energy, and tunable visible photoemission [7]. The optical band gap energy of the sulfide (E g = 2.70 eV) make Cu 3 TaS 4 transparent to most visible light, and thin films of this material could be used in transparent electronics as p-type layers in active devices including p-n junctions, transistor channel layers, and photovoltaics [7].…”

Section: Introductionmentioning

confidence: 99%

Structure Refinement of the Semiconducting Compound Cu₃TaS₄from X-Ray Powder Diffraction Data

et al. 2011

View full text Add to dashboard Cite

The ternary compound Cu 3 TaS 4 has been investigated by means of X-ray powder diffraction and its structure has been refined by the Rietveld method. This compound is isostructural with the sulvanite mineral Cu 3 VS 4 , and crystallizes in the cubic P43m space group (No. 215), Z = 1, with unit cell parameters a = 5.5145(1) Å and V = 167.70(1) Å 3 . The refinement of 14 instrumental and structural parameters converged to R p = 4.4%, R wp = 6.8%, R exp = 5.5% and S = 1.2 for 4501 step intensities and 33 independent reflections.

show abstract

“…The band gap is large enough for Cu 3 TaS 4 to be transparent (2.75 eV), while Cu 3 TaSe 4 (2.35 eV) absorbs in the blue [81,82]. The room-temperature Seebeck coefficient of both Cu 3 TaS 4 and Cu 3 TaSe 4 powders is about þ25 mV K À1 , confirming the p-type nature.…”

Section: Cu 3 Tach 4 (Ch ¼ S Se Te)mentioning

confidence: 78%

p ‐Type Wide‐Band‐Gap Semiconductors for Transparent Electronics

Tate

Keszler

2010

Transparent Electronics

View full text Add to dashboard Cite

Thin film preparation and characterization of wide band gap Cu3TaQ4 (Q = S or Se) p-type semiconductors

Cited by 41 publications

References 10 publications

Wide Band Gap Chalcogenide Semiconductors

Wide Band Gap Chalcogenide Semiconductors

Structure Refinement of the Semiconducting Compound Cu₃TaS₄from X-Ray Powder Diffraction Data

p ‐Type Wide‐Band‐Gap Semiconductors for Transparent Electronics

Contact Info

Product

Resources

About

Thin film preparation and characterization of wide band gap Cu3TaQ4 (Q = S or Se) p-type semiconductors

Cited by 41 publications

References 10 publications

Wide Band Gap Chalcogenide Semiconductors

Wide Band Gap Chalcogenide Semiconductors

Structure Refinement of the Semiconducting Compound Cu3TaS4from X-Ray Powder Diffraction Data

p ‐Type Wide‐Band‐Gap Semiconductors for Transparent Electronics

Contact Info

Product

Resources

About

Structure Refinement of the Semiconducting Compound Cu₃TaS₄from X-Ray Powder Diffraction Data