Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al2O3 with Sn interlayers

Liang, Muh-Wang; Hsieh, Tsung−Eong; Chang, Shih‐Ying; Chuang, Tung‐Han

doi:10.1007/s11664-003-0229-5

Cited by 11 publications

(8 citation statements)

References 10 publications

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“…The intermetallic layers broke into coarse particles with the increase in temperature or heating time, as revealed in Fig. 4a 5 , which corresponds to the h-Cu 6 Sn 5 phase in the Cu-Sn equilibrium diagram. A similar intermetallic compound (Cu 0.99 Au 0.01 ) 6 Sn 5 was found in the diffusion-soldered joint of Cu/Ti/Si and Au/Cu/Al 2 O 3 with a Sn interlayer.…”

Section: Resultsmentioning

confidence: 95%

“…A similar intermetallic compound (Cu 0.99 Au 0.01 ) 6 Sn 5 was found in the diffusion-soldered joint of Cu/Ti/Si and Au/Cu/Al 2 O 3 with a Sn interlayer. 5 However, the change of the interlayer to pure In generated a different kind of intermetallic compound (Cu 0.99 Au 0.01 )In. 6 For the soldering reactions between liquid In-49Sn and Cu substrates, Chuang et al reported the formation of an intermetallic compound Cu 6 (Sn 0.54 In 0.46 ) 5 at the In-49Sn(l)/Cu(s) interfaces.…”

Section: Resultsmentioning

confidence: 99%

“…The growth kinetics of the e-intermetallic phase between Cu and h-intermetallics was interfacially controlled with an activation energy of 121 kJ/mol. The intermetallic compounds formed at the diffusion-soldered interfaces between Cu/Ti/Si and Au/Cu/Al 2 O 3 with pure Sn and pure In interlayers have been investigated by Liang et al 5 and Tsao et al, 6 respectively. In the wake of published studies on intermetallic reactions of liquid In-49Sn solder with solid Au and Cu substrates, 7,8 this present paper is concerned with thin-film diffusion soldering between Cu/Ti/Si and Au/Cu/Al 2 O 3 using a near-eutectic In/Sn interlayer.…”

Section: Introductionmentioning

confidence: 99%

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Intermetallic compounds formed during diffusion soldering of Au/Cu/Al2O3 and Cu/Ti/Si with Sn/In interlayer

Chuang

Lin

Tsao

2006

Journal of Elec Materi

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A Si wafer was sequentially sputter-coated with Ti (20 nm), Cu (6 mm), Sn (4 mm), and In (4 mm). The specimen was then diffusion-soldered at temperatures between 150 and 300°C with an alumina substrate deposited with Cu (4 mm) and Au (6 mm). Experimental results showed that a multilayer of intermetallic phases with the compositions of (Cu 0.99 Au 0.01 ) 6 (Sn 0.52 In 0.48 ) 5 / (Au 0.87 Cu 0.13 )(In 0.94 Sn 0.06 ) 2 /(Au 0.98 Cu 0.02 ) (In 0.95 Sn 0.05 ) formed at the Au/Cu interface. Kinetic analyses revealed that the growth of (Cu 0.99 Au 0.01 ) 6 (Sn 0.52 In 0.48 ) 5 and (Au 0.87 Cu 0.13 )(In 0.94 Sn 0.06 ) 2 /(Au 0.98 Cu 0.02 )(In 0.95 Sn 0.05 ) intermetallics were diffusion-controlled with activation energies of 21.5 and 31.3 kJ/mol, respectively. Sound tensile strengths of 42 and 48 kg/cm 2 have been obtained under the bonding conditions of 150°C for 40 min. and 200°C for 30 min., respectively.

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Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Intermetallic compounds formed during diffusion soldering of Au/Cu/Al2O3 and Cu/Ti/Si with Sn/In interlayer

Chuang

Lin

Tsao

2006

Journal of Elec Materi

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“…Liang et al 18 studied the liquid-solid reactions of Cu/Sn/Au thin-film couples at temperatures between 250°C and 400°C from 10 min to 40 min. Owing to the low thickness of liquid Sn (4 µm), the η-intermetallic scallops could not be stripped away, leaving the grooves along the interface "closed" after such prolonged reactions.…”

Section: Resultsmentioning

confidence: 99%

Mechanisms for interfacial reactions between liquid Sn-3.5Ag solders and cu substrates

Chuang

Cheng

et al. 2004

Journal of Elec Materi

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Intermetallic compounds formed during the soldering reactions between Sn-3.5Ag and Cu at temperatures ranging from 250°C to 375°C are investigated.The results indicate that scallop-shaped η-Cu 6 (Sn 0.933 Ag 0.007 ) 5 intermetallics grow from the Sn-3.5Ag/Cu interface toward the solder matrix accompanied by Cu dissolution. Following prolonged or higher temperature reactions, ε-Cu 3 (Sn 0.996 Ag 0.004 ) intermetallic layers appear behind the Cu 6 (Sn 0.933 Ag 0.007 ) 5 scallops. The growth of these interfacial intermetallics is governed by a kinetic relation: ∆X ϭ t n , where the n values for η and ε intermetallics are 0.75 and 0.96, respectively. The mechanisms for such nonparabolic growth of interfacial intermetallics during the liquid/solid reactions between Sn-3.5Ag solders and Cu substrates are probed.

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“…Since solid liquid interdiffusion bonding has the merits of a low bonding temperature process and high temperature application, it has been applied in the past few decades to the manufacturing of microwave packages, high power devices, thick-film resistors, GaAs/Si wafer packages, and even gold jewelry. Recently, diffusion soldering has also been employed for ceramic multichip modules [2,3], MEMS packaging [4], semiconductor packaging [5], hybrid joining [6], and hermetic package sealing [7].…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Bonding of Pd/Ni Assembly for Hydrogen Purifier

Lin¹,

Chuang²,

Tsai³

et al. 2016

World Congress on Mechanical, Chemical, and Material Engineering

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-For manufacturing a Pd cell for hydrogen purification, a key technology is the bonding of a Pd fine tube with a stainless steel grasp. In this study, the SLID method has been employed to join Pd sheet and Ni plate to evaluate the bendability between a Pd tube and a Ni coated stainless steel grasp. The results indicated that directly inserting a Sn interlayer with a thickness of 8.5μm between the Pd sheet and Ni plate caused the formation of Ni3Sn4 and PdSn4 intermetallic compounds, respectively. However, certain Sn interlayer remained after SLID bonding and low shear strength of 5.3 MPa was obtained. Furthermore, the remaining of low melting point Sn interlayer cannot withstand the operating temperature (above 350 ºC) of SLID assembled Pd cell for hydrogen purification. Reducing the Sn interlayer thickness to 3 μm led to the complete exhausting of Sn interlayer. Unfortunately, a long crack appeared at the Ni3Sn4/PdSn4 interface and a low bonding strength was resulted. Adding an Ag thin layer between the Sn coated Pd sheet and Ni plate caused an Ag3Sn intermetallic compound to form between the Ni3Sn4 and PdSn4 layers, and cracking of the Pd/Ni joint was prevented. This improvement led to satisfactory bonding strengths ranging from 10.6 to 17.3 MPa. High temperature storage at 400ºC for 100 hr did not degrade the bonding interfaces or bonding strengths.

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Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al2O3 with Sn interlayers

Cited by 11 publications

References 10 publications

Intermetallic compounds formed during diffusion soldering of Au/Cu/Al2O3 and Cu/Ti/Si with Sn/In interlayer

Intermetallic compounds formed during diffusion soldering of Au/Cu/Al2O3 and Cu/Ti/Si with Sn/In interlayer

Mechanisms for interfacial reactions between liquid Sn-3.5Ag solders and cu substrates

Low Temperature Bonding of Pd/Ni Assembly for Hydrogen Purifier

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