2008
DOI: 10.1016/j.vacuum.2008.01.043
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Thin-film Si:H-based solar cells

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Cited by 43 publications
(23 citation statements)
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“…In this regime, the dark conductivity of the a-Si:H layer was observed to increase abruptly by over 1 order of magnitude due to a significant phase transition. This phase transition represents μc-Si:H formation within the a-Si: H matrix, as has been observed by many other researchers [8,9]. Higher-bandgap a-Si:H variants would clearly be beneficial in the production of high-performance top cells, but film quality should also be considered concurrently.…”
Section: A High-performance A-si:h Top Cell With a Wide Bandgap Intrisupporting
confidence: 68%
“…In this regime, the dark conductivity of the a-Si:H layer was observed to increase abruptly by over 1 order of magnitude due to a significant phase transition. This phase transition represents μc-Si:H formation within the a-Si: H matrix, as has been observed by many other researchers [8,9]. Higher-bandgap a-Si:H variants would clearly be beneficial in the production of high-performance top cells, but film quality should also be considered concurrently.…”
Section: A High-performance A-si:h Top Cell With a Wide Bandgap Intrisupporting
confidence: 68%
“…[125]. Franklin et al discussed about the novel Si cells made of single crystalline solar cells [126].…”
Section: Materials For Efficient Light Absorptionmentioning
confidence: 99%
“…This means that in all cases the crystalline fraction gradually increases during film deposition, which is well-known phenomena for nc-Si:H growth. 12,32 For the C-series, X c increases as σ rms increases, whereas for the D-series, X c decreases as σ rms increases. This implies that X c cannot be simply correlated to σ rms of the substrates only, but that other factors play a role as well.…”
Section: Nc-si:h Crystalline Fractionmentioning
confidence: 99%