Thin-Film Silicon –Growth Process and Solar Cell Application–

Matsuda, Akihisa

doi:10.1143/jjap.43.7909

Cited by 186 publications

(152 citation statements)

References 43 publications

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“…9 Moreover, ZnO is chemically and thermally stable in hydrogen-containing plasmas, which are employed, in the presence of SiH 4 gas, for the deposition of silicon-based thin film p-i-n junctions. [10][11][12][13] Therefore, impurity-doped ZnO, e.g., ZnO:Al, is considered to be an attractive candidate to replace ITO. 8 There are several deposition techniques applied to synthesize ZnO, such as sol-gel, 14 spray pyrolisis, 15 magnetron sputtering, [16][17][18] pulsed laser deposition, 19,20 atomic layer deposition, 21,22 and metalorganic chemical vapor deposition (MO-CVD).…”

Section: Introductionmentioning

confidence: 99%

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Ponomarev

Verheijen

Keuning

et al. 2012

Journal of Applied Physics

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Ponomarev, M., Verheijen, M. A., Keuning, W., Sanden, van de, M. C. M., & Creatore, M. (2012). Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition. Journal of Applied Physics, 112(4), 043708-1/7. [043708]. DOI: 10.1063/1.4747942 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO:Al layers by focusing on the control of the resistivity gradient and providing the solution towards thin ( 300 nm) ZnO:Al layers, exhibiting a resistivity value as low as 4 Â 10 À4 X cm. The approach chosen in this work is to enable the development of several ZnO:Al crystal orientations at the initial stages of the CVD-growth, which allow the formation of a densely packed structure exhibiting a grain size of 60-80 nm for a film thickness of 95 nm. By providing an insight into the growth of ZnO:Al layers, the present study allows exploring their application into several solar cell technologies. Highly conducting (doped) ZnO thin films are being used in diverse applications, such as light-emitting 1 and laser diodes, 2 architectural and automotive glazing, 3 thin-film transistors, 4,5 and high efficiency thin-film solar cells. 6 This latter makes use of ZnO as transparent conducting oxide (TCO), whe...

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Section: Introductionmentioning

confidence: 99%

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Ponomarev

Verheijen

Keuning

et al. 2012

Journal of Applied Physics

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“…Among the large amount of information coming out of decades of experiments and production, one phenomenon has captured particular attention, leading to several, sometimes controversial, interpretations. Increasing amounts of hydrogen impinging the surface were indeed shown to enhance crystallinity both during growth, and/or in post-growth treatments [2,4,5]. The observation of a simultaneous decrease in the growth rate, and/or of the thinning of the samples during hydrogen exposure, strongly suggested hydrogen to be able to preferentially etch noncrystalline regions [2,6].…”

Section: Plasma-enhanced Chemical Vapor Deposition (Pecvd)mentioning

confidence: 93%

“…As demonstrated in Refs. [8,9], impingement of SiH 3 , the dominant radical in PECVD under several working conditions [10,11], easily produces a surface dangling bond on Si 001 -2 1 : H to which a second incoming silyl molecule can stick forming the stable, but not epitaxial, configuration reported in Fig. 1 (inset 2Ha).…”

mentioning

confidence: 98%

Thermal-Hydrogen Promoted Selective Desorption and Enhanced Mobility of Adsorbed Radicals in Silicon Film Growth

et al. 2008

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Car-Parrinello simulations and static density-functional theory calculations reveal how hydrogen promotes growth of epitaxial, ordered Si films in plasma-enhanced chemical vapor deposition at lowtemperature conditions where the exposed Si 001 -2 1 surface is fully hydrogenated. Thermal H atoms, indeed, are shown to selectively etch adsorbed silyl back to the gas phase or to form adsorbed species which can be easily incorporated into the crystal down to T 200 C and start diffusing around T 300 C. Our results are well consistent with earlier experiments. DOI: 10.1103/PhysRevLett.100.046105 PACS numbers: 81.15.Gh, 68.43.Bc, 68.47.Fg Plasma-enhanced chemical vapor deposition (PECVD) is a very popular technique for growing silicon films. The possibility of reaching high growth rates at moderate temperatures has made PECVD particularly appealing for generating amorphous (a), microcrystalline ( c), and nanocrystalline (nc) films, of particular importance, e.g., in the production of solar cells [1]. By reducing the growth rate [2] or by raising the substrate temperature [3] also epitaxial silicon films of good quality can be obtained. This versatility surely makes PECVD of extreme scientific interest. Among the large amount of information coming out of decades of experiments and production, one phenomenon has captured particular attention, leading to several, sometimes controversial, interpretations. Increasing amounts of hydrogen impinging the surface were indeed shown to enhance crystallinity both during growth, and/or in post-growth treatments [2,4,5]. The observation of a simultaneous decrease in the growth rate, and/or of the thinning of the samples during hydrogen exposure, strongly suggested hydrogen to be able to preferentially etch noncrystalline regions [2,6]. A further, possibly complementary channel for H-induced crystallinity in postgrowth exposure was also proposed [5]. While very many indications for possible competing mechanisms were given based on experimental observations, the complexity of the problem, in terms of geometry, chemistry, and the multitude of species involved, has prevented so far the development of a parameter-free quantitative modeling of the process at the atomic scale able to shed full light on the phenomenon.In this Letter we shall focus on the role played by hydrogen during silicon-film growth starting from a fully hydrogenated Si 001 -2 1 representative of the initial stages of low-temperature deposition, where thermal H desorption is not activated [7]. Our study has been motivated by the wide interest in hydrogen-induced crystallization, and, more specifically, by the seminal paper of Tsai et al. [2] in which it is demonstrated the possibility of growing epitaxial Si films with PECVD at a very low temperature T 200 C, provided that silane is introduced in the reactor strongly diluted with H 2 . In their paper, Tsai et al. suggested preferential etching of nonepitaxial adsorbed species to cause the improved quality of the grown sample. Hydrogen etching is proposed to be selecti...

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“…The results mentioned above are quite different from those of the films synthesized by either HW CVD or ECR CVD method. The coverage over the growing surface with atomic hydrogen is required for the forming of micro crystallites because the adsorbed SiH 3 can migrate to find a low energy site for crystallization when the growing surface is covered with hydrogen atoms [11]. In the case of HW CVD, the atomic hydrogen is supplied by the decomposition of SiH 4 on the hot wire.…”

Section: Resultsmentioning

confidence: 99%

The Influence of the Hot Wire Temperature on the Crystallization of μc-Si:H Films Prepared by Hot Wire-Assisted-ECR-CVD

Chen

et al. 2006

MRS Proc.

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We have constructed a hot wire assisted ECR CVD system to prepare a-Si:H and µc-Si:H films. The effect of hot wire temperature on crystallization of a-Si:H films is studied in the films prepared by these system. The crystalline fraction and crystalline grain size are analyzed by Raman scattering. The hydrogen content and the bonding scheme of hydrogen were measured by Fourier transform infrared (FTIR) spectroscopy. At low hot wire temperature, about 20 at.% hydrogen is included in the film. With increasing the hot wire temperature, the total content of the hydrogen, SiH 2 and SiH decrease and the microcrystalline phase appears. It is found from the ratio of the crystalline TO peak to the total area of the TO peak of the Raman scattering spectra that the volume fraction of the crystalline phase increases with increasing the hot wire temperature. The crystalline peak has a tendency to shift toward the higher wavenumber with increasing the hot wire temperature, suggesting that the grain size increases with increasing the hot wire temperature.

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Thin-Film Silicon –Growth Process and Solar Cell Application–

Cited by 186 publications

References 43 publications

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Thermal-Hydrogen Promoted Selective Desorption and Enhanced Mobility of Adsorbed Radicals in Silicon Film Growth

The Influence of the Hot Wire Temperature on the Crystallization of μc-Si:H Films Prepared by Hot Wire-Assisted-ECR-CVD

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