Thin film silicon on insulator substrates and their application to integrated circuits

Wilson, S. R.; Wetteroth, T.; Hong, Seon-Eui; Hwang, Bor-Yuan; Foerstner, J.; Racanelli, M.; Huang, Margaret; Shin, Hyungcheol

doi:10.1007/bf02666168

Cited by 5 publications

(4 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…SOI technology offers complete dielectric isolation and promises enhanced performance for semiconductor devices in both high-power and low-power circuits (72). SOI wafers are made using bonding and etch-back technology, implantation of oxygen in silicon (73), and more exploratory lateral growth or implantation methods (74,75). These wafers provide an opportunity to investigate phonon-interface scattering in films that, at least in comparison with other films and superlattices discussed in this review, contain low concentrations of lattice imperfections.…”

Section: Single-crystal Films and Superlatticesmentioning

confidence: 99%

Heat Conduction in Novel Electronic Films

Goodson

1999

Annu. Rev. Mater. Sci.

163

View full text Add to dashboard Cite

Heat conduction in novel electronic films influences the performance and reliability of micromachined transistors, lasers, sensors, and actuators. This article reviews experimental and theoretical research on heat conduction in single-crystal semiconducting and superconducting films and superlattices, polycrystalline diamond films, and highly disordered organic and oxide films. The thermal properties of these films can differ dramatically from those of bulk samples owing to the dependence of the material structure and purity on film processing conditions and to the scattering of heat carriers at material boundaries. Predictions and data show that phonon scattering and transmission at boundaries strongly influence the thermal conductivities of single-crystal films and superlattices, although more work is needed to resolve the importance of strain-induced lattice defects. For polycrystalline films, phonon scattering on grain boundaries and associated defects causes the thermal conductivity to be strongly anisotropic and nonhomogeneous. For highly disordered films, preliminary studies have illustrated the influences of impurities on the volumetric heat capacity and, for the case of organic films, molecular orientation on the conductivity anisotropy. More work on disordered films needs to resolve the interplay among atomic-scale disorder, porosity, partial crystallinity, and molecular orientation.

show abstract

Section: Single-crystal Films and Superlatticesmentioning

confidence: 99%

Heat Conduction in Novel Electronic Films

Goodson

1999

Annu. Rev. Mater. Sci.

163

View full text Add to dashboard Cite

show abstract

“…34,35 Such SOI structures can be formed by oxygen implantation and annealing ͓separation by implantation of oxygen ͑SIMOX͔͒ or by bonding of two Si wafers followed by backetching ͓bonded and backetched silicon on insulator ͑BESOI͔͒. Two years ago, Alterovitz and co-workers 36 presented an ellipsometry analysis of BESOI material.…”

Section: H Sic On Insulator "Sicoi…mentioning

confidence: 99%

Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si

Zollner

Chen

Duda

et al. 1999

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Articles you may be interested inVisible to vacuum ultraviolet dielectric functions of epitaxial graphene on 3C and 4H SiC polytypes determined by spectroscopic ellipsometry Details of below band-gap uniaxial dielectric function of SiC polytypes studied by spectroscopic ellipsometry and polarized light transmission spectroscopy Spectroscopic rotating-analyzer ellipsometry employing a compensator and optical transmission were used to measure the dielectric functions of bulk 4H and 6H SiC from 0.72 to 6.6 eV for light propagating nearly parallel to the hexagonal axis. The measurements below the band gap show the presence of a thin surface layer, which was modeled as SiO 2 . The data are similar to results for cubic ͑3C͒ and 6H SiC from the literature, but differences are notable, particularly above 4 eV. At 5.56 eV, we observe a critical point in 4H SiC, which is assigned to direct interband transitions along the UϭM ϪL axis in the hexagonal Brillouin zone after comparison with band structure calculations. No evidence for direct transitions below 6.5 eV was found in 6H SiC. We apply our results to the analysis of a 4H SiC film on insulator ͑SiCOI͒ produced by high-dose hydrogen implantation and direct wafer bonding on Si. For comparison, we also studied a 1 m thick epitaxial layer of 3C SiC on Si, where the interference oscillations are influenced by surface and interface roughness.

show abstract

“…Correlation with buried oxide, lot 1.-It has been reported that poor BOX quality affects thin gate oxide quality. [7][8][9][10][11][12][13][14] We have investigated here the integrity of gate oxide and BOX in SIMOX samples from the first lot over exactly the same area. The gate and buried oxide breakdown voltages were measured using the same gated diodes.…”

Section: Resultsmentioning

confidence: 99%

“…5,6 Quality of gate oxides grown on SOI substrates is known to be sensitive to the fabrication process. [6][7][8][9][10][11][12][13][14][15][16][17][18][19] Imperfections in starting material that may affect the oxide quality include dislocations, stacking faults, metal impurities in SOI film, surface roughness, and trapped charge. [6][7][8][9][10][11][12][13][14][15] It has also been reported that the damage due to source/drain implantation 16 and stress due to local oxidation of silicon (LOCOS) isolation 17,18 could cause early failure of the thin gate oxide grown on the SOI substrate.…”

mentioning

confidence: 99%

Optimized Process Conditions for High Quality Gate Oxides on SIMOX SOI Substrates

Seo

Woo

Maszara³

1999

J. Electrochem. Soc.

View full text Add to dashboard Cite

The quality of thin gate oxides grown on separation-by-implantation-of-oxygen silicon-on-insulator (SIMOX SOI) was investigated. The early-failure-rate of gate oxides in optimized SIMOX SOI has been as low as in bulk reference samples. Samples with low oxygen dose (4 ϫ 10 17 /cm 2 ) and relatively slow (1ЊC/min) postimplantation anneal ramp-up rate exhibited the best gate oxides. Surface roughness (up to 1 nm with 20 ϫ 20 m scanned area) and SOI film thickness (150-230 nm) showed almost no impact on the early failure rate of the gate oxides on SIMOX SOI.

show abstract

Thin film silicon on insulator substrates and their application to integrated circuits

Cited by 5 publications

References 7 publications

Heat Conduction in Novel Electronic Films

Heat Conduction in Novel Electronic Films

Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si

Optimized Process Conditions for High Quality Gate Oxides on SIMOX SOI Substrates

Contact Info

Product

Resources

About