Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications

Roig, J.; Flores, D.; Hidalgo, S.; Rebollo, J.; Millán, José del R.

doi:10.1016/s0026-2692(03)00187-3

Cited by 4 publications

(3 citation statements)

References 13 publications

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“…It is also used in aerospace and military applications because of its radiation resistance properties [4,5]. Apart from its technological importance, Si NSs are also studied because of change in electronic, vibrational and optical properties as a result of quantum confinement effects.…”

Section: Introductionmentioning

confidence: 99%

“…Si-on-sapphire (SOS) is used in large-scale integrated circuitry primarily because it provides better electrical insulation to prevent stray currents in the electronic circuits. It is also used in aerospace and military applications because of its radiation resistance properties [4,5]. Apart from its technological importance, Si NSs are also studied because of change in electronic, vibrational and optical properties as a result of quantum confinement effects.…”

Section: Introductionmentioning

confidence: 99%

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Spectroscopic Investigation of Quantum Confinement Effects in Ion Implanted Silicon-on-Sapphire Films

Kumar

Mavi

Shukla

2010

Silicon

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Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B + ) and phosphorous (P + ) ions. Different samples, prepared by varying the ion dose in the range 10 14 -5×10 15 and ion energy in the range 150-350 keV, were investigated by the Raman spectroscopy, photoluminescence (PL) spectroscopy and glancing angle x-ray diffraction (GAXRD). The Raman results from dose dependent B + implanted samples show red-shifted and asymmetrically broadened Raman line-shape for B + dose greater than 10 14 ions cm −2 . The asymmetry and red shift in the Raman line-shape is explained in terms of quantum confinement of phonons in silicon nanostructures formed as a result of ion implantation. PL spectra shows size dependent visible luminescence at ∼1.9 eV at room temperature, which confirms the presence of silicon nanostructures. Raman studies on P + implanted samples were also carried out as a function of ion energy. The Raman results show an amorphous top SOS surface for sample implanted with 150 keV P + ions of dose 5×10 15 ions cm −2 . The nanostructures are formed when the P + energy is increased to 350 keV by keeping the ion dose fixed. The GAXRD results show consistency with the Raman results.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Spectroscopic Investigation of Quantum Confinement Effects in Ion Implanted Silicon-on-Sapphire Films

Kumar

Mavi

Shukla

2010

Silicon

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“…Other approaches could also be used for increasing the breakdown voltage and reduce the on-resistance R on , such as double RESURF technique by using internal field rings, buried layers, triple well architecture and super-junction LDMOS transistors (Hossain et al, 2002;Nezar and Salama, 1991;Liaw et al, 2007;Puchner et al, 2007;Park and Salama, 2006). In literature, one can also find thin-film single-crystal silicon LDMOS structures but they use either Silicon on Insulator (SOI) (Akarvardar et al, 2007;Luo et al, 2003;Bawedin et al, 2004) or Silicon on Sapphire (SOS) (Roig et al, 2004) technologies.…”

Section: Introductionmentioning

confidence: 99%

High-voltage (100 V) Chipfilm<sup>TM</sup> single-crystal silicon LDMOS transistor for integrated driver circuits in flexible displays

2009

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Abstract. System-in-Foil (SiF) is an emerging field of large-area polymer electronics that employs new materials such as conductive polymers and electrophoretic micro-capsules (E-Ink) along with ultra-thin and thus flexible chips. In flexible displays, the integration of gate and source drivers onto the flexible part increases the yield and enhances the reliability of the system. In this work we propose a high-voltage ChipfilmTM lateral diffused MOS transistor (LDMOS) structure on ultra-thin single-crystalline silicon chips. The fabrication process is compatible with CMOS standard processing. This LDMOS structure proves to be well suited for providing adequately large switching voltages in spite of the thin (<10 μm) substrate. A breakdown voltage of more than 100 volts with drain-to-source saturation current Ids(sat)≈85 μA/μm for N-LDMOS and Ids(sat)≈20 μA/μm for P-LDMOS is predicted through process and device simulations.

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Ab Initio Hartree-Fock Simulation of R-Plane Sapphire

2012

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Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications

Cited by 4 publications

References 13 publications

Spectroscopic Investigation of Quantum Confinement Effects in Ion Implanted Silicon-on-Sapphire Films

Spectroscopic Investigation of Quantum Confinement Effects in Ion Implanted Silicon-on-Sapphire Films

High-voltage (100 V) Chipfilm<sup>TM</sup> single-crystal silicon LDMOS transistor for integrated driver circuits in flexible displays

Ab Initio Hartree-Fock Simulation of R-Plane Sapphire

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Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications

Cited by 4 publications

References 13 publications

Spectroscopic Investigation of Quantum Confinement Effects in Ion Implanted Silicon-on-Sapphire Films

Spectroscopic Investigation of Quantum Confinement Effects in Ion Implanted Silicon-on-Sapphire Films

High-voltage (100 V) Chipfilm&lt;sup&gt;TM&lt;/sup&gt; single-crystal silicon LDMOS transistor for integrated driver circuits in flexible displays

Ab Initio Hartree-Fock Simulation of R-Plane Sapphire

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High-voltage (100 V) Chipfilm<sup>TM</sup> single-crystal silicon LDMOS transistor for integrated driver circuits in flexible displays