Thin Film Solar Cell Based on ZnSnN<sub>2</sub>/SnO Heterojunction

Javaid, Kashif; Yu, Jen‐te; Wu, Weihua; Wang, Jun; Zhang, Hongliang; Gao, Junhua; Zhuge, Fei; Liang, Lingyan; Cao, Hongtao

doi:10.1002/pssr.201700332

Cited by 44 publications

(38 citation statements)

References 27 publications

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“…[1][2][3] These novel optical characteristics are important for the development of a new generation of solar cells. [4][5][6] Therefore, the ultrafast electron transfer (ET) process in heterostructures has attracted much attention. Many groups have confirmed that the ET process of heterostructures occurred on an ultrafast time scale, such as CdSe quantum dots (QDs) and fullerene, [7] CsPbBr 3 and CdSe QDs, [8] black phosphorus and InSe, [9] and so on.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast Electron Transfer in Binary Nanoparticle Superlattices under High Pressure

Cheng

Pan

et al. 2021

Physica Rapid Research Ltrs

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The interparticle spacing of a heterostructure is a crucial factor affecting electron transfer (ET) process. Herein, binary nanoparticle superlattices (BNSLs) composed of CdSe/ZnS quantum dots (QDs) and Au nanoclusters (NCs) are prepared. Steady-state and time-resolved spectra illustrate that the ET accelerates as the pressure increases because pressure effectively adjusts the interparticle spacing. The results also demonstrate that the trap state of the CdSe/ZnS QDs affects the ET process of BNSLs.

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Section: Introductionmentioning

confidence: 99%

Ultrafast Electron Transfer in Binary Nanoparticle Superlattices under High Pressure

Cheng

Pan

et al. 2021

Physica Rapid Research Ltrs

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“…The emerging PV nitride absorbers are represented by ZnSnN 2 , which was only discovered a few years ago. This emerging absorber material has been recently reported by one group to have up to 1.5% efficiency in sputtered form [37,60]. Another interesting case is (In, Ga)N with multiple quantum wells grown by metal organic chemical vapor deposition, also used in light emitting diodes.…”

Section: Pnictidesmentioning

confidence: 99%

Emerging inorganic solar cell efficiency tables (Version 1)

et al. 2019

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This paper presents the efficiency tables of materials considered as emerging inorganic absorbers for photovoltaic solar cell technologies. The materials collected in these tables are selected based on their progress in recent years, and their demonstrated potential as future photovoltaic absorbers. The first part of the paper consists of the criteria for the inclusion of the different technologies in this paper, the verification means used by the authors, and recommendation for measurement best practices. The second part details the highest world-class certified solar cell efficiencies, and the highest non-certified cases (some independently confirmed). The third part highlights the new entries including the record efficiencies, as well as new materials included in this version of the tables. The final part is dedicated to review a specific aspect of materials research that the authors consider of high relevance for the scientific community. In this version of the Efficiency tables, we are including an overview of the latest progress in theoretical methods for modeling of new photovoltaic absorber materials expected to be synthesized and confirmed in the near future. We hope that this emerging inorganic Solar Cell Efficiency Tables (Version 1) paper, as well as its future versions, will advance the field of emerging photovoltaic solar cells by summarizing the progress to date and outlining the future promising research directions. Abbreviations Eff. (%)Conversion efficiency obtained under AM1.5 illumination in percentageOpen circuit voltage in Volts J SC (mA cm −2 ) Short circuit current in mili-Ampers by square centimeter F. F. (%) Fill factor in percentage E g (eV) Bandgap in electronvolt AZO ZnO:Al ITO In 2 O 3 :SnO 2 Spiro-OMeTAD 2,2′,7,7′-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (C 81 H 68 N 4 O 8 ) TBAI Tetrabutylammonium iodide OPEN ACCESS RECEIVED

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“…Some groups have already investigated the use of ZnSnN 2 as an absorbent layer in solar cells. [2][3][4] ZnSnN 2 provides a tunable band gap energy and a high absorption coefficient. 5,6 The Zn-IV-N 2 type compounds would cover a large part of the solar spectrum for bandgap energies ranging from 1.4 eV (ZnSnN 2 ) to 5.7 eV (ZnSiN 2 ).…”

Section: Introductionmentioning

confidence: 99%

Approaching Theoretical Band Gap of ZnSnN₂ Films via Bias Magnetron Cosputtering at Room Temperature

Virfeu

Alnjiman

Ghanbaja

et al. 2021

ACS Appl. Electron. Mater.

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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Thin Film Solar Cell Based on ZnSnN₂/SnO Heterojunction

Cited by 44 publications

References 27 publications

Ultrafast Electron Transfer in Binary Nanoparticle Superlattices under High Pressure

Ultrafast Electron Transfer in Binary Nanoparticle Superlattices under High Pressure

Emerging inorganic solar cell efficiency tables (Version 1)

Approaching Theoretical Band Gap of ZnSnN₂ Films via Bias Magnetron Cosputtering at Room Temperature

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Thin Film Solar Cell Based on ZnSnN2/SnO Heterojunction

Cited by 44 publications

References 27 publications

Ultrafast Electron Transfer in Binary Nanoparticle Superlattices under High Pressure

Ultrafast Electron Transfer in Binary Nanoparticle Superlattices under High Pressure

Emerging inorganic solar cell efficiency tables (Version 1)

Approaching Theoretical Band Gap of ZnSnN2 Films via Bias Magnetron Cosputtering at Room Temperature

Contact Info

Product

Resources

About

Thin Film Solar Cell Based on ZnSnN₂/SnO Heterojunction

Approaching Theoretical Band Gap of ZnSnN₂ Films via Bias Magnetron Cosputtering at Room Temperature