Thin film tape recording heads with high moment FeAlN poles

Bain, J.A.; Wolfson, J.; Kryder, M.H.; Yip, Yung; Reid, James; Silkensen, R.D.; Dee, R.H.

doi:10.1109/20.477568

Cited by 16 publications

(3 citation statements)

References 12 publications

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“…The Fe 4 N film system had been great interest as a soft FM material for write poles. [4][5][6] On the other hand, we successfully improved crystalline of the Fe 4 N film, and reported inverse tunnel magnetoresistance (inverse-TMR) and inverse current-induced magnetization switching (inverse-CIMS) in Fe 4 N/MgO/CoFeB magnetic tunnel junctions (Fe 4 N-MTJs). [7][8][9] In terms of the density of states at the Fermi level, an inverse-TMR and an inverse-CIMS reflect the negative spin polarization of the Fe 4 N electrode, which indicates the conduction by electrons with minority spin.…”

Section: Introductionmentioning

confidence: 99%

The Enhancement of Magnetic Damping in Fe₄N Films with Increasing Thickness

Isogami

Tsunoda

Oogane

et al. 2013

Jpn. J. Appl. Phys.

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The film thickness dependence of the magnetic damping coefficient (α) was investigated by measuring the ferromagnetic resonance (FMR) of Fe4N/NM (NM: Pt and Cu) bilayer films at room temperature. We observed that α in Fe4N/Pt films increased with increasing Fe4N film thickness. Moreover, the enhancement of α, which is represented by the difference in the α values of Fe4N/Pt and Fe4N/Cu films, also increased as the Fe4N film thickness increased. The behavior observed in the Fe4N system was the opposite of that observed for the conventional Ni–Fe system. We speculated two mechanisms occurring in Fe4N/Pt films, which are less magnetic and/or nonmagnetic impurities in the Fe4N films and enhancement of the coercive force (H c) with increasing Fe4N film thickness.

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Section: Introductionmentioning

confidence: 99%

The Enhancement of Magnetic Damping in Fe₄N Films with Increasing Thickness

Isogami

Tsunoda

Oogane

et al. 2013

Jpn. J. Appl. Phys.

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“…eAlN thin films combine high saturation moment, low coercivity, high permeability, good high frequency response and durability [1] [2], and therefore are ideal as pole materials for high density write heads applications. Typically, rf-diode reactively sputtered FeAlN films have a high compressive stress, which can cause delamination of thick top poles due to the combination of large strain energy stored in the film and a modest interfacial strength.…”

Section: Introductionmentioning

confidence: 99%

Residual stress optimization in FeAlN pole materials

Zou

Bain

2000

IEEE Trans. Magn.

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Rf-diode reactively sputtered FeAlN films, which are good candidates for high-density write head pole materials, usually have very large compressive residual stresses. In this paper we describe our efforts to lower the residual stress, and study the effects of lowered stress on the magnetic properties of the FeAlN films. It is found that increasing the total sputtering pressure while keeping the optimum Fe to N arrival flux constant can lower the residual stress. The films with lowered residual stress, however, are more susceptible to the formation of stripe domains which are detrimental to the magnetic properties. In order to avoid these stripe domains, the thickness of the film should not exceed the critical stripe domain onset thickness. For applications where thicker films are desired, we demonstrate that laminating single layer films whose thicknesses do not exceed the critical thickness produces films with good magnetic properties and acceptable residual stress.

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“…Note, in order to write this high coercivity media, we plan to use tip materials with M s Ͼ1600 kA/m such as iron nitride. [34][35][36] Micromagnetic models, assuming that the tip is shaped like a brick (45 nmϫ45 nmϫ180 nm), 37,38 indicate that achieving a relatively high flux transmission efficiency through the tip will be possible, but at the cost of severe nonlinearity. Under the assumption of perfect head efficiency, it is estimated that the minimum current necessary to generate the required write field is approximately 3 mA for a three-turn-head design.…”

Section: B Magnetic Headõmedia Designmentioning

confidence: 99%

Single-chip computers with microelectromechanical systems-based magnetic memory (invited)

Carley

Bain

Fedder

et al. 2000

Journal of Applied Physics

102

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This article describes an approach for implementing a complete computer system ͑CPU, RAM, I/O, and nonvolatile mass memory͒ on a single integrated-circuit substrate ͑a chip͒-hence, the name ''single-chip computer.'' The approach presented combines advances in the field of microelectromechanical systems ͑MEMS͒ and micromagnetics with traditional low-cost very-large-scale integrated circuit style parallel lithographic manufacturing. The primary barrier to the creation of a computer on a chip is the incorporation of a high-capacity ͓many gigabytes ͑GB͔͒ re-writable nonvolatile memory ͑in today's terminology, a disk drive͒ into an integrated circuit ͑IC͒ manufacturing process. This article presents the following design example: a MEMS-based magnetic memory that can store over 2 GB of data in 2 cm 2 of die area and whose fabrication is compatible with a standard IC manufacturing process.

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Thin film tape recording heads with high moment FeAlN poles

Cited by 16 publications

References 12 publications

The Enhancement of Magnetic Damping in Fe₄N Films with Increasing Thickness

The Enhancement of Magnetic Damping in Fe₄N Films with Increasing Thickness

Residual stress optimization in FeAlN pole materials

Single-chip computers with microelectromechanical systems-based magnetic memory (invited)

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Thin film tape recording heads with high moment FeAlN poles

Cited by 16 publications

References 12 publications

The Enhancement of Magnetic Damping in Fe4N Films with Increasing Thickness

The Enhancement of Magnetic Damping in Fe4N Films with Increasing Thickness

Residual stress optimization in FeAlN pole materials

Single-chip computers with microelectromechanical systems-based magnetic memory (invited)

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Product

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The Enhancement of Magnetic Damping in Fe₄N Films with Increasing Thickness

The Enhancement of Magnetic Damping in Fe₄N Films with Increasing Thickness