Thin-film transistors based on p-type Cu2O thin films produced at room temperature

Abstract

Copper oxide (Cu2O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm2/V s and an on/off ratio of 2×102.

Growth of ∼5 cm2V−1s−1 mobility, p-type Copper(I) oxide (Cu2O) films by fast atmospheric atomic layer deposition (AALD) at 225°C and below

“…Hence, within the narrow window of conditions studied (125 -225 o C), the composition of the Cu2O should be approximately constant. In previous works on sputtered films, carrier concentration generally decreases on going from RT to 500 • C 19 or after annealing of the as-deposited films at 200 • C. 10 The mobility of the films Fig. 3(a) and 3(b)) shows a factor of 6.6 variation over the temperature range studied: the highest value obtained at 225 • C was 5.3 cm 2 · V −1 · s −1 , and the lowest value obtained at 150 • C was 0.8 cm 2 · V −1 · s −1 .…”

“…[http://dx.doi.org/10.1063/1.4771681] Cu 2 O is attracting great interest in a wide variety of applications, including as anode in batteries, 1 gas sensors, 2 catalysis, 3 biosensing applications, 4 resistive RAM, 5 photovoltaics, 6 photoelectrochemical water splitting, 7 p-type thin film transistors (TFT) [8][9][10] and CMOS; 11 as well as in other all-oxide transparent electronic applications. 12 When used as a p-type material, the simple binary composition of Cu 2 O gives it a processing advantage over the more complicated ternary oxides (e.g.…”

p-channel thin-film transistors based on spray-coated Cu2O films

“…In order to prepare Cu 2 O thin film, the most straightforward way is the controlled oxidation of a precursor Cu layer 21,22 or using more advanced variations such as radical oxidation by O 2 plasma, 23 all of which are simple methods that could produce good quality Cu 2 O films. However, for device fabrication, the need to obtain high fieldeffect mobility along with the multiple-phase nature of Cu-O material system (Cu, Cu 2 O, and CuO) have led to the focus on complex vacuum-based deposition techniques such as pulsedlaser deposition (PLD) 14,24 and sputtering 25,26 with the aim to produce single-phase, high-quality Cu 2 O films for transistor applications. These methods, however, rely on stringent experimental conditions and are incompatible with high-throughput manufacturing processes, especially when compared to solution-based deposition techniques.…”

Top-gate hybrid complementary inverters using pentacene and amorphous InGaZnO thin-film transistors with high operational stability

“…However, n-channel TFTs tend to be more susceptible to degradation in air and show lower mobility values than metal-oxide semiconductors. On the other hand, metal-oxide semiconductor TFTs that can be processed at low temperatures and yield high mobility values, with a few exceptions, 3 operate mainly as n-channel TFTs. 2,4 Metal-oxide TFTs that are stable under continuous bias stress typically require annealing at temperatures higher than 300 o C, however, strategies are emerging to reduce its processing temperatures, making them more suitable to flexible substrates.…”