Thin film transistors fabricated at low temperatures in single crystal silicon films on glass substrates

Kouvatsos, Dimitrios N.; Sarcona, G.; Tsoukalas, D.; Hatalis, Miltiadis K.; Goustouridis, D.; Stoëmenos, J.

doi:10.1109/amlcd.1995.540974

Cited by 6 publications

(4 citation statements)

References 2 publications

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“…First, attempts to develop such a substrate via other means, which are also based on the hydrogen-ion implantation of silicon followed by thermal bonding to glass, present problems such as the contamination of the silicon by the elements in the glass via diffusion at the high process temperatures encountered during the fabrication of thin-film transistors. 3,4,12,13 This situation necessitates the deposition of a barrier film on the glass to prevent the diffusion of mobile species. Such a deposited film, typically silicon-oxynitride deposited via plasma-enhanced chemical vapor deposition, inherently contains many defects that act as charge trapping centers.…”

Section: Methodsmentioning

confidence: 99%

“…The doses were selected based on the levels that are commonly used. 4,[14][15][16] CMOS device fabrication.-One objective of this work was the development of a low-temperature, glass-compatible CMOS process, where the self-aligned (SA) p-and n-channels, and the LDD nchannel TFTs were fabricated simultaneously. The SA n-channel TFT has no LDD.…”

Section: Methodsmentioning

confidence: 99%

“…Unfortunately, all of these technologies exhibit significant TFT performance variation, and they additionally have limited performance and functionality. [1][2][3][4][5] Corning Incorporated has developed a new SiOG substrate that consists of a high-quality crystalline silicon layer on industry-standard EAGLE 2000 glass using a process that is compatible with flatpanel display manufacturing. The substrate targets the small-format portable display market.…”

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confidence: 99%

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Reduction of Hot Carrier Effects in Silicon-on-Glass TFTs

Mativenga

Choi

et al. 2011

J. Electrochem. Soc.

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Hot carrier (HC) instability of thin-film transistors (TFTs) fabricated on single-crystal,silicon-on-glass (SiOG) substrates is studied. The formation of the SiOG substrate is achieved by the transfer of a single-crystal silicon film to a display-glass substrate. The transfer process creates an in-situ barrier layer free of mobile ions in the glass adjacent the silicon film. The n- and p-channel TFT transfer characteristics typically exhibit excellent on-state performance with gate voltage swing values of 180 mV/decade, electron and hole mobilities of ∼ 251 and 201 cm2/V·s respectively, and threshold voltages of approximately −0.3 and −1.2 V for the n- and p-channel TFT’s respectively. While p-channel TFTs exhibit good stability, on-current degradation is observed in the transfer characteristics of the n-channel TFT. The degradation is due to HC stress. In this study, the integration of a lightly doped drain (LDD) structure in the n-channel SiOG TFTs to minimize HC instability is reported. The LDD design incorporates 2 μm offset regions. The offset regions are lightly doped (n-) with phosphorus ions implanted at 10 keV. N-levels of ∼ 1 × 1013, 2 × 1013, and 3 × 1013 cm−2 are analyzed to determine the optimum doping conditions that reduce HC instability while minimizing degradation in the on-state device performance.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

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Reduction of Hot Carrier Effects in Silicon-on-Glass TFTs

Mativenga

Choi

et al. 2011

J. Electrochem. Soc.

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“…Attempts have also been made to transfer single crystalline Si layers to glass substrates using complex processes, but these have resulted in films that are not purely crystalline silicon. Unfortunately, all these technologies exhibit significant TFT performance variation, and additionally have limited performance and functionality (2)(3)(4)(5)(6).…”

Section: Introductionmentioning

confidence: 99%

Reduction of Hot Carrier Effects in Corning Silicon-on-Glass TFTs

Mativenga¹,

Choi²,

Choi³

et al. 2010

ECS Trans.

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Hot carrier (HC) instability of thin film transistors (TFTs) fabricated on single crystalline Corning® Silicon-on-Glass (SiOG) substrates is studied (1). The n- and p-channel TFT transfer characteristics typically exhibit excellent on-state performance with electron and hole field effect mobilities (μfe) of ~251 and 201 cm2/V⋅s, threshold voltages of ~-0.3 and -1.2 V, and gate swing (S) values of ~180 mV/dec. While p-channel TFTs exhibit good stability, on-current (ION) degradation is unfortunately observed in the transfer characteristics of the n-channel TFT due to HC stress. In this study, the integration of a lightly doped drain (LDD) structure to minimize HC instability in the n-channel SiOG TFTs is reported. The LDD design has 2 μm regions produced by ion implanting phosphorus at 10 keV to a light doping (n-) level. N- levels of ~1 × 1013, 2 × 1013, and 3 × 1013 cm−2 are analyzed to determine the optimum doping conditions that leads to HC improvement with minimal detrimental impact to the on-state device performance.

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Sputtered tungsten gates for AMLCDs

Stewart

Sarcona²,

Hatalis³

Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays

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A comparison between aluminum and tungsten MOS capacitors has been performed. The electrical characterization of the capacitors was carried out using HFCV techniques to extract the flat band voltage, fured charge, and density of interface states. Breakdown measurements were also taken. The data shows that the breakdown voltages and density of interface states are similar for the tungsten and aluminum capacitors. The tungsten capacitors contained twice as much fixed charge. This difference in fured charge amounts to around a half a volt change in threshold voltage for oxide thicknesses near 1OOOA. This is not significant because it is offset by the difference in work functions between aluminum and tungsten. IntroductionActive matrix liquid crystal displays require a gate material that can serve as both a scan line and a pixel transistor gate. For such application a material is required that has low resistivity and is compatible with subsequent processing. The traditional gate materials of aluminum and polysilicon fall short of these requirements. Aluminum cannot withstand the subsequent processing steps, while polysilicon is too resistive to work in many applications.' Other materials must be used to satisfy these requirements. A group of elements named the refractory metals satisfies these requirements. Refractory metals have low resistivities compared with polysilicon and are compatible with subsequent processing.This paper deals with tungsten as a possible gate metal for AMLCD applications.Beyond the issues of process compatibility and resistivity remains the question of whether devices of similar quality can be made using tungsten instead of aluminum as the gate material. This is important in order to use the same gate metal in the driving circuitry as in the display proper. In this experiment, MOS capacitors are produced with both aluminum and tungsten to compare the electrical characteristics of both MOS systems. The MOS capacitor is an important device in the AMLCD field not only because it is used in some peripheral driving circuits such as the digital to analog converter, but also because it forms the basis of the thin-film transistors used throughout the display. Both high frequency capacitance-voltage (HFCV) measurements and breakdown voltage measurements are taken to extract the relevant electrical parameters of the two MOS systems. Comparisons were made of the breakdown voltage, the fixed charge, the flat band voltage shift and the density of interface states. The fmed charge indicates how much positive charge is trapped in the silicon dioxide layer. A poor gate material could introduce positive charges into the oxide and degrade device performance. The flat band voltage is the voltage required to flatten the bands in a MOS band diagram. At flat band voltage conditions the silicon is neither in depletion nor accumulation. The applied voltage under flat band voltage conditions is the amount necessary to counter the difference in semiconductor work functions and account for any fured charge density in t...

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Thin film transistors fabricated at low temperatures in single crystal silicon films on glass substrates

Cited by 6 publications

References 2 publications

Reduction of Hot Carrier Effects in Silicon-on-Glass TFTs

Reduction of Hot Carrier Effects in Silicon-on-Glass TFTs

Reduction of Hot Carrier Effects in Corning Silicon-on-Glass TFTs

Sputtered tungsten gates for AMLCDs

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