Thin-film transistors with sputtered CdSe as semiconductor

Moersch, G.; Rava, P.; Schwarz, Francisc C.; Paccagnella, A.

doi:10.1109/16.19949

Cited by 11 publications

(7 citation statements)

References 4 publications

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“…CdSe thin films have been prepared by various film deposition techniques such as sputtering (Moersch et al, 1989), MOCVD (Chae et al, 2006), electron beam evaporation (Murali et al, 2008), photoelectrochemical (Pawar et al, 2006), and chemical bath deposition (CBD) method which is found to be cheap, low deposition temperature and simple way to deposit large area thin film 2005), (Ezema and Osuji, 2007) and (Elahi and Ghobad, 2008).…”

Section: ‫ــــــــــــــــــــــــــــــــــــــــــــــــــــــ‬ Intmentioning

confidence: 99%

The Optical and Electrical Properties of CdSe Thin Films Prepared by CBD Technique

Jamil¹,

Mahmood²,

Mustafa³

2012

RJS

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In this work thin films of CdSe were deposited on glass substrate by chemical bath deposition technique at different deposition temperatures 298, 318, and 328 K. The effects of deposition temperature on the optical properties have been studied as well as the effect of annealing at different temperatures (373, 473, 573 and 673 K) for one hour. The optical properties of CdSe were studied from transmittance measurements as a function of a range of wave lengths (320-1000 nm). Optical band gap has been decreased from 2 to 1.7 eV after annealing. CdSe/p-Si was prepared by depositing CdSe film on the p-type Si substrate. The I-V characteristics showed a diode behavior.

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Section: ‫ــــــــــــــــــــــــــــــــــــــــــــــــــــــ‬ Intmentioning

confidence: 99%

The Optical and Electrical Properties of CdSe Thin Films Prepared by CBD Technique

Jamil¹,

Mahmood²,

Mustafa³

2012

RJS

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“…The TFTs had the usual inverted staggered configuration (see, for example, [6,7]) and were fabricated on n + -Si<100> wafers on which was grown a 300 nm thick thermal gate oxide. The substrates were heated in vacuum in the CdSe deposition chamber at 200 o C for 10 minutes to desorb residual water from the surface and then cooled to the deposition temperature of 70 o C. CdSe (99.995% pure) was deposited to a thick- …”

Section: Device Description and Experimental Detailsmentioning

confidence: 99%

Low Frequency Noise in CdSe Thin-Film Transistors

Deen

Rumyantsev²,

Landheer³

et al. 2000

30th European Solid-State Device Research Conference

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Low frequency noise in CdSe thin-film transistors (TFTs) has been studied, for the first time, over a wide range of gate and drain biases, temperatures and gate areas. The dependencies of the noise on the gate voltage and the gate length indicate that the 1/f noise originates from the bulk sources homogeneously distributed in the channel. The value of Hooge parameter α lies within the usual range for Si TFTs and amorphous Si. The absence of the illumination effect on the relative noise spectra of drain current fluctuations reveals that the nature of the 1/f noise in CdSe is probably different from that in Si and GaAs.

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“…Cadmium selenide (CdSe) is an important member of II-VI group of binary compounds which has many applications like high-efficiency thin film transistors, [1,2] solar cells, [3,4] photoconductors [5] and gas sensors. [6,7] In order to improve the performance of the devices, key attention has been given in recent years to study the physical properties of CdSe thin films.…”

Section: Introductionmentioning

confidence: 99%